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BC847SH6727XTSA1

Infineon Technologies

BC847SH6727XTSA1 by Infineon Technologies

BC847SH6727XTSA1 by Infineon Technologies is a NPN BJT with 2 elements, hFE of 200. It has a VCE of 45V and IC of 0.1A, suitable for amplifier applications. This transistor is surface mountable, with Gull Wing terminals in a small outline package shape.

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5

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1k+

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USA . 131,500 parts In-Stock

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France . 1,464 parts In-Stock

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Digiode

USA . 784 parts In-Stock

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Nova Conductors

Japan . 28 parts In-Stock

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Corohmni

South Africa . 36 parts In-Stock

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$1.262

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Aztec Data Supply Inc.

USA . 27,276 parts In-Stock

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Modulus Dynamics

Lithuania . 13,833 parts In-Stock

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$1.556

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$1.494

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$1.432

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AZTECH Wire

Italy . 584 parts In-Stock

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$9.381

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Ampacity Inc.

Singapore . 969 parts In-Stock

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$46.050

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Semicontronic

India . 764 parts In-Stock

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Component Stockers USA

USA . 797 parts In-Stock

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Microchip USA

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QUARKTWIN TECHNOLOGY LTD

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Argo Parts USA

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Australia . 500 parts In-Stock

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Overview

Unleash the power of high-quality amplification with the BC847SH6727XTSA1 by Infineon Technologies. As a leader in semiconductor technology, Infineon delivers unparalleled performance and reliability in the Small Signal Bipolar Junction Transistor category. Ideal for various amplifier applications, this NPN transistor boasts a maximum Collector-Emitter Voltage of 45V and a Minimum DC Current Gain of 200, ensuring top-notch quality and efficiency. Trust Infineon to provide cutting-edge solutions that elevate your projects to new heights. Experience the difference with the BC847SH6727XTSA1 - where innovation meets excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliable and safe operation.

Polarity or Channel Type: NPN

Common and versatile NPN type allows for easy integration into various circuit designs.

Configuration: SEPARATE, 2 ELEMENTS

Two separate elements offer flexibility in circuit configurations and applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification tasks.

Surface Mount: YES

Surface mount capability allows for easy and space-efficient PCB assembly.

Package Shape: RECTANGULAR

Rectangular shape provides easy handling and mounting on PCBs.

Terminal Form: GULL WING

Gull wing terminals offer secure and reliable connections during soldering.

Minimum DC Current Gain (hFE): 200

High minimum DC current gain ensures consistent and stable amplification performance.

Maximum Collector-Emitter Voltage: 45 V

Allows for operation in a wide range of voltage applications, increasing versatility.

Transistor Element Material: SILICON

Silicon material provides high reliability and efficiency in transistor operation.

Maximum Collector Current (IC): 0.1 A

Sufficient maximum collector current for many small signal applications.

Terminal Position: DUAL

Dual terminal position makes it easier to integrate into circuits and ensures a secure connection.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high quality and reliability for automotive applications.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency allows for faster switching and response times in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC847SH6727XTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G6

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC847SH6727XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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