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BCR22PNH6433XTMA1

Infineon Technologies

BCR22PNH6433XTMA1 by Infineon Technologies

BCR22PNH6433XTMA1 by Infineon Technologies is a Small Signal BJT with NPN and PNP channels. It features 2 elements with built-in resistor for switching applications. This transistor has a max Vce of 50V, hFE of 50, and fT of 130MHz, making it suitable for high-frequency switching circuits in automotive electronics.

Median Price

$1.821

Lifecycle Status

EOL

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 5,000 parts In-Stock

1+ parts

$1.821

100+ parts

$1.657

1k+ parts

$1.493

10k+ parts

-

5,000

$1.821

$1.657

$1.493

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Verical

USA . 180,000 parts In-Stock

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Nova Conductors

Japan . 69 parts In-Stock

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$0.126

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69

$0.126

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Digiode

USA . 910 parts In-Stock

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$1.730

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910

$1.730

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Vyrian

USA . 8,952 parts In-Stock

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8,952

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VNN

France . 70 parts In-Stock

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70

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Distributors (Availability)

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Continental Prestige Electronics

USA . 6,322 parts In-Stock

1+ parts

$0.126

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$0.123

6,322

$0.126

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$0.123

Argo Parts USA

USA . 4,525 parts In-Stock

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$0.126

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$0.122

4,525

$0.126

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$0.122

Corohmni

South Africa . 86 parts In-Stock

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$1.213

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86

$1.213

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Modulus Dynamics

Lithuania . 12,189 parts In-Stock

1+ parts

$1.419

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$1.362

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$1.305

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12,189

$1.419

$1.362

$1.305

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Ampacity Inc.

Singapore . 52,421 parts In-Stock

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$1.550

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Corphita

USA . 5 parts In-Stock

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$1.639

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5

$1.639

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$1.821

100+ parts

$1.657

1k+ parts

$1.493

10k+ parts

-

5,000

$1.821

$1.657

$1.493

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AZTECH Wire

Italy . 77 parts In-Stock

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$15.910

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77

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Epart123

USA . 150,000 parts In-Stock

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Perfect Parts

USA . 134,400 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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$0.123

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$0.120

10k+ parts

$0.117

100

-

$0.123

$0.120

$0.117

Overview

Upgrade your electronics with the BCR22PNH6433XTMA1 by Infineon Technologies. With a reputation for excellence in manufacturing, Infineon delivers top-notch quality in every product. This small signal bipolar junction transistor is perfect for switching applications, offering seamless performance and reliability. Its NPN and PNP polarity, built-in resistor, and high transition frequency make it a versatile choice for various electronic projects. Trust Infineon to provide you with the best in technology, value, and innovation. Elevate your designs with the BCR22PNH6433XTMA1 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material is durable and can withstand a wide range of temperatures, making it suitable for various applications.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for versatility in circuit design and compatibility with different configurations.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design, making it more efficient and reducing the need for additional components.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast and reliable switching performance.

Surface Mount: YES

Surface mount capability makes installation easier and allows for higher pack density on circuit boards.

Package Shape: RECTANGULAR

Rectangular shape allows for space-efficient placement on circuit boards, optimizing layout and design.

Terminal Form: GULL WING

Gull wing terminals provide secure solder connections and easy mounting on PCBs.

No. of Terminals: 6

Having 6 terminals allows for multiple connection points, enhancing connectivity and functionality in circuits.

Minimum DC Current Gain (hFE): 50

A higher minimum DC current gain ensures consistent and stable transistor performance across different operating conditions.

Maximum Collector-Emitter Voltage: 50 V

With a maximum voltage of 50V, this transistor can handle a broad range of voltage requirements in various applications.

Transistor Element Material: SILICON

Silicon material ensures reliable and consistent transistor operation, offering high performance and durability.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor is suitable for low to medium power applications.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit connections and allows for different mounting options.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standards ensures high reliability and quality, making this transistor suitable for automotive applications.

Nominal Transition Frequency (fT): 130 MHz

High nominal transition frequency of 130 MHz indicates fast switching speeds and reliable performance in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR22PNH6433XTMA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PDSO-G6

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR22PNH6433XTMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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