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BCR22PNH6327XTSA1

Infineon Technologies

BCR22PNH6327XTSA1 by Infineon Technologies

Infineon's BCR22PNH6327XTSA1 is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 elements with built-in resistors, a max VCE of 50V, and hFE of 50. This surface-mount transistor has a package style of small outline and operates at a nominal transition frequency of 130MHz.

Median Price

$0.060

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 88 parts In-Stock

1+ parts

$1.132

100+ parts

$1.030

1k+ parts

$0.928

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88

$1.132

$1.030

$0.928

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RS (Exports)

UK . 23,950 parts In-Stock

1+ parts

-

100+ parts

$0.049

1k+ parts

$0.037

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23,950

-

$0.049

$0.037

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Arrow

USA . 3,000 parts In-Stock

1+ parts

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$0.059

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$0.059

Verical

USA . 3,000 parts In-Stock

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$0.060

3,000

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$0.060

Distributors (In-Stock)

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Digiode

USA . 577 parts In-Stock

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$0.142

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577

$0.142

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Nova Conductors

Japan . 10 parts In-Stock

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$0.282

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10

$0.282

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Chip Stock

USA . 319,900 parts In-Stock

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319,900

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Vyrian

USA . 147,880 parts In-Stock

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NAC Semi

USA . 66,000 parts In-Stock

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$0.230

66,000

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$0.230

VNN

France . 21,859 parts In-Stock

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21,859

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IBS Electronics

USA . 9,000 parts In-Stock

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$0.059

9,000

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$0.059

Rutronik

Germany . 6,000 parts In-Stock

1+ parts

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$0.055

6,000

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$0.055

Cyclops Electronics Ltd

UK . 4,785 parts In-Stock

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4,785

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TME

Poland . 3,000 parts In-Stock

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$0.068

3,000

-

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$0.068

Contempo Components LLC

USA . 816 parts In-Stock

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816

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Lantek

USA . 450 parts In-Stock

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450

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ComSIT Distribution GmbH

Germany . 17 parts In-Stock

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17

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Distributors (Availability)

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Semicontronic

India . 106,613 parts In-Stock

1+ parts

$0.041

100+ parts

$0.040

1k+ parts

$0.040

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106,613

$0.041

$0.040

$0.040

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Ampacity Inc.

Singapore . 146,318 parts In-Stock

1+ parts

$0.044

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146,318

$0.044

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Corphita

USA . 895 parts In-Stock

1+ parts

$0.135

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895

$0.135

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Continental Prestige Electronics

USA . 3,233 parts In-Stock

1+ parts

$0.282

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$0.276

3,233

$0.282

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$0.276

Argo Parts USA

USA . 3,129 parts In-Stock

1+ parts

$0.282

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$0.274

3,129

$0.282

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$0.274

Corohmni

South Africa . 617 parts In-Stock

1+ parts

$0.415

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617

$0.415

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Component Stockers USA

USA . 174,191 parts In-Stock

1+ parts

$0.440

100+ parts

$0.210

1k+ parts

$0.130

10k+ parts

$0.050

174,191

$0.440

$0.210

$0.130

$0.050

Aztec Data Supply Inc.

USA . 4,275 parts In-Stock

1+ parts

$0.892

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4,275

$0.892

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Advanced Electronics

New Zealand . 88 parts In-Stock

1+ parts

$1.132

100+ parts

$1.030

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$0.928

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88

$1.132

$1.030

$0.928

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Modulus Dynamics

Lithuania . 22,961 parts In-Stock

1+ parts

$1.262

100+ parts

$1.212

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$1.161

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22,961

$1.262

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Benley Electronics

USA . 1 parts In-Stock

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$5.000

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1

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Perfect Parts

USA . 302,313 parts In-Stock

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Eastek

USA . 273,000 parts In-Stock

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RC Electronics

USA . 69,637 parts In-Stock

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$0.280

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$0.250

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$0.240

69,637

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$0.240

Glotronic Ltd.

UK . 12,000 parts In-Stock

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Authorized Procurement Solutions

USA . 2,600 parts In-Stock

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iodParts Technologies Inc.

India . 450 parts In-Stock

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450

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GreenTree Electronics

Israel . 450 parts In-Stock

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450

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Overview

Unlock the potential of your electronic devices with the BCR22PNH6327XTSA1 from Infineon Technologies. Crafted with precision and quality, this small signal bipolar junction transistor offers unparalleled performance in switching applications. With NPN and PNP configurations and built-in resistors, this transistor provides seamless operation for your projects. Whether you're a hobbyist or a professional, this product's high DC current gain and maximum collector-emitter voltage of 50V ensure reliability and efficiency. Upgrade your circuitry today with the BCR22PNH6327XTSA1 and experience the difference!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and insulation for the transistor, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: NPN AND PNP

Offers versatility in circuit design as both NPN and PNP transistors are included in the package.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Allows for separate use of the two elements with the added convenience of built-in resistors, simplifying circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring high efficiency and performance in switching circuits.

Surface Mount: YES

Enables easy mounting on the surface of a circuit board, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

Provides a compact form factor, fitting well in small spaces and making it ideal for portable electronic devices.

Minimum DC Current Gain (hFE): 50

Ensures sufficient amplification and signal processing capabilities in various circuit applications.

Maximum Collector-Emitter Voltage: 50 V

Supports a wide range of voltage levels in circuit designs, allowing for flexible and versatile use.

Maximum Collector Current (IC): 0.1 A

Capable of handling moderate current levels, suitable for a range of low to medium power applications.

Nominal Transition Frequency (fT): 130 MHz

Provides high-frequency performance, making it suitable for applications requiring fast switching speeds and high-frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR22PNH6327XTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR22PNH6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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