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BCM846SE6327HTSA1

Infineon Technologies

BCM846SE6327HTSA1 by Infineon Technologies

BCM846SE6327HTSA1 by Infineon Technologies is a NPN BJT with 2 elements, hFE of 200. It's used as an amplifier in surface mount applications, featuring max VCE of 65V and IC of 0.1A. Ideal for high-frequency operations with fT of 250MHz and can withstand up to 150°C operating temperature.

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4

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1k+

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Vyrian

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Digiode

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Nova Conductors

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Modulus Dynamics

Lithuania . 10,323 parts In-Stock

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Ampacity Inc.

Singapore . 1,424 parts In-Stock

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AZTECH Wire

Italy . 257 parts In-Stock

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Argo Parts USA

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Corphita

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Continental Prestige Electronics

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Microchip USA

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Bastille Electronics

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Overview

Upgrade your electronics with the Infineon Technologies BCM846SE6327HTSA1, a high-quality Small Signal Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by industry leader Infineon Technologies, this NPN transistor is perfect for amplifier applications, providing a seamless integration into your electronic designs. With a maximum operating temperature of 150°C and a transition frequency of 250 MHz, this transistor delivers top-notch efficiency and durability. Trust in the Infineon name for superior quality and innovation in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor, making it durable and reliable for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering high efficiency and performance.

Configuration: SEPARATE, 2 ELEMENTS

Having separate 2 elements allows for more flexibility in circuit design, enabling better control and optimization of the transistor's performance.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring high signal amplification and low noise performance.

Surface Mount: YES

Surface mount capability makes the transistor easy to integrate into PCB designs, saving space and simplifying manufacturing processes.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy placement and alignment during assembly, improving overall efficiency.

Terminal Form: GULL WING

Gull wing terminals offer strong mechanical support and secure solder connections, enhancing the reliability of the transistor.

No. of Elements: 2

Having 2 elements allows for more versatility in circuit design, enabling complex functionality and better performance.

No. of Terminals: 6

Having 6 terminals provides ample connectivity options, allowing for easy integration into various circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, making it ideal for applications where size constraints are a concern.

Minimum DC Current Gain (hFE): 200

High minimum DC current gain ensures consistent and stable amplification performance across a wide range of operating conditions.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to work reliably in demanding conditions without overheating.

Maximum Collector-Emitter Voltage: 65 V

High maximum collector-emitter voltage rating provides robustness and protection against voltage spikes, enhancing the transistor's durability.

Transistor Element Material: SILICON

Silicon material offers high reliability and performance, making the transistor suitable for a wide range of applications.

Maximum Collector Current (IC): 0.1 A

Maximum collector current rating of 0.1 A allows for reliable operation under moderate load conditions, ensuring stability and longevity.

Terminal Position: DUAL

Having dual terminal positions enables easier connection and integration into circuit layouts, reducing installation time and effort.

Nominal Transition Frequency (fT): 250 MHz

High nominal transition frequency allows the transistor to operate at high speeds, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCM846SE6327HTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

65 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G6

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCM846SE6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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