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BCM847BS,135

NXP Semiconductors

BCM847BS,135 by NXP Semiconductors

NXP Semiconductors' BCM847BS,135 is a NPN BJT with 2 elements for amplifier applications. It has a max power dissipation of 0.3W, hFE of 200, and fT of 250MHz. With a max operating temp of 150°C and VCE of 45V, it's ideal for small outline packages in surface mount designs.

Median Price

$0.303

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 1,000 parts In-Stock

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$0.126

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$0.119

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$0.119

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1,000

$0.126

$0.119

$0.119

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DigiKey

USA . 22,956 parts In-Stock

1+ parts

$0.480

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$0.187

1k+ parts

$0.125

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$0.090

22,956

$0.480

$0.187

$0.125

$0.090

Mouser Electronics

USA . 12,897 parts In-Stock

1+ parts

$0.560

100+ parts

$0.227

1k+ parts

$0.124

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$0.088

12,897

$0.560

$0.227

$0.124

$0.088

Future Electronics

Canada . 250,000 parts In-Stock

1+ parts

-

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$0.075

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$0.075

Distributors (In-Stock)

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Digiode

USA . 1,515 parts In-Stock

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$0.120

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$0.120

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Nova Conductors

Japan . 10 parts In-Stock

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$0.122

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10

$0.122

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NAC Semi

USA . 200,000 parts In-Stock

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$0.130

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$0.130

Chip Stock

USA . 183,000 parts In-Stock

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IBS Electronics

USA . 170,000 parts In-Stock

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$0.098

170,000

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$0.098

Bristol Electronics

USA . 40,000 parts In-Stock

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Vyrian

USA . 4,044 parts In-Stock

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VNN

France . 2,015 parts In-Stock

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Anansix

USA . 560 parts In-Stock

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560

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Semicontronic

India . 55,513 parts In-Stock

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$0.061

100+ parts

$0.059

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$0.059

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55,513

$0.061

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$0.059

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Corphita

USA . 4,904 parts In-Stock

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$0.113

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Continental Prestige Electronics

USA . 4,261 parts In-Stock

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$0.122

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$0.119

4,261

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Argo Parts USA

USA . 1,502 parts In-Stock

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$0.122

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$0.118

Corohmni

South Africa . 19 parts In-Stock

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$0.122

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19

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$0.126

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$0.119

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$0.119

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AZTECH Wire

Italy . 3,980 parts In-Stock

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$0.300

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$0.300

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Aztec Data Supply Inc.

USA . 3,427 parts In-Stock

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$0.541

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Perfect Parts

USA . 974,400 parts In-Stock

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iodParts Technologies Inc.

India . 5,800 parts In-Stock

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$0.242

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Supply Digital

USA . 2,734 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$0.119

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$0.116

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$0.113

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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UNI Independent Distributors

Spain . 56 parts In-Stock

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Overview

Elevate your electronic designs with the NXP Semiconductors BCM847BS,135 Small Signal Bipolar Junction Transistor. With a reputation for top-quality components, NXP Semiconductors delivers reliability and innovation in every product. Ideal for amplifier applications, this NPN transistor boasts a maximum collector-emitter voltage of 45V and a minimum DC current gain of 200, ensuring optimal performance in your circuits. Trust NXP Semiconductors to provide cutting-edge technology and unmatched value for all your semiconductor needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material for the package body, providing protection for the internal components.

Polarity or Channel Type: NPN

Common NPN configuration for versatile amplifier applications.

Configmaverion: SEPARATE, 2 ELEMENTS

Separate elements allow for independent operation or use in different circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring reliable performance in amplifying signals.

Surface Mount: YES

Easy surface mounting for efficient PCB assembly and space-saving design.

Terminal Form: GULL WING

Gull wing terminals for secure soldering and reliable connection.

Maximum Power Dissipation (Abs): 0.3 W

Adequate power dissipation capability for handling amplification tasks without overheating.

Package Style (Meter): SMALL OUTLINE

Compact small outline package for space-constrained applications.

Minimum DC Current Gain (hFE): 200

High minimum DC current gain for consistent and stable amplification.

Maximum Operating Temperature: 150 °C

High maximum operating temperature for robust performance in various environments.

Maximum Collector-Emitter Voltage: 45 V

Sufficient collector-emitter voltage rating for handling various voltage levels.

Transistor Element Material: SILICON

Silicon material for reliable and efficient transistor operation.

Maximum Collector Current (IC): 0.1 A

Adequate collector current rating for handling current flow in amplifier circuits.

Terminal Finish: TIN

Tin terminal finish for reliable soldering and electrical performance.

Terminal Position: DUAL

Dual terminal position for flexible installation and circuit design.

Case Connection: ISOLATED

Isolated case connection for improved safety and protection against short circuits.

Maximum Time At Peak Reflow Temperature (s): 30

Quick peak reflow time for efficient manufacturing processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature for reliable and durable solder joints.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency for fast signal amplification and response.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCM847BS,135 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCM847BS,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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