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BCM857BS,135

NXP Semiconductors

BCM857BS,135 by NXP Semiconductors

BCM857BS,135 by NXP Semiconductors is a PNP BJT with 2 elements, ideal for amplifier applications. Features include max collector-emitter voltage of 45V, max collector current of 0.1A, and min DC current gain of 200. Suitable for surface mount with small outline package style.

Median Price

$0.146

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Adafruit Industries

USA . 200 parts In-Stock

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$0.117

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$0.112

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$0.112

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200

$0.117

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DigiKey

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$0.480

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$0.187

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$0.125

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$0.090

76,700

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$0.187

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$0.090

Mouser Electronics

USA . 20,051 parts In-Stock

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$0.480

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Future Electronics

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Rochester

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$0.190

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Verical

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IBS Electronics

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NAC Semi

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Chip Stock

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Elcom Components

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Corphita

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Overview

Unlock the power of innovation with the NXP Semiconductors BCM857BS,135 Small Signal Bipolar Junction Transistor. Manufactured by a trusted leader in semiconductor technology, this PNP transistor offers high-quality performance for amplifier applications. With a compact design and advanced features like separate elements and a maximum operating temperature of 150°C, this transistor delivers reliability and efficiency. Trust NXP Semiconductors to provide cutting-edge solutions that exceed expectations. Experience the difference with the BCM857BS,135.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package lightweight and durable, suitable for various applications.

Polarity or Channel Type: PNP

PNP type transistor allows for easy integration with other PNP components in the circuit.

Configuration: SEPARATE, 2 ELEMENTS

Separate configuration with 2 elements allows for flexibility in circuit design and optimization.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, providing high gain and low noise operation.

Surface Mount: YES

Surface mount capability makes it easy to mount and solder onto PCBs, saving space and assembly time.

Terminal Form: GULL WING

Gull wing terminal form provides a secure mechanical connection and ease of soldering.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3W, it can handle moderate power levels without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for high-density mounting.

Minimum DC Current Gain (hFE): 200

High minimum DC current gain of 200 ensures consistent and stable amplification in the circuit.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C allows for reliable performance in harsh environments.

Maximum Collector-Emitter Voltage: 45 V

With a maximum collector-emitter voltage of 45V, it can handle moderate voltage levels in the circuit.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability of the transistor element.

Maximum Collector Current (IC): 0.1 A

Maximum collector current of 0.1A allows for handling of moderate current levels in the circuit.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance for long-term reliability.

Terminal Position: DUAL

Dual terminal position allows for easy PCB layout and connection in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds, ensuring proper soldering and assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature of 260°C ensures reliable solder joints during assembly.

Nominal Transition Frequency (fT): 175 MHz

High nominal transition frequency of 175MHz allows for fast switching and high-frequency operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCM857BS,135 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCM857BS,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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