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BCM846SH6327XTSA1

Infineon Technologies

BCM846SH6327XTSA1 by Infineon Technologies

BCM846SH6327XTSA1 by Infineon Technologies is a NPN BJT with 2 elements, ideal for amplifier applications. Features include hFE of 200, VCE of 65V, and fT of 250MHz. This small outline transistor has Gull Wing terminals and meets AEC-Q101 standards.

Median Price

$0.218

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 5,052 parts In-Stock

1+ parts

$0.360

100+ parts

$0.151

1k+ parts

$0.081

10k+ parts

$0.053

5,052

$0.360

$0.151

$0.081

$0.053

Adafruit Industries

USA . 450 parts In-Stock

1+ parts

$0.812

100+ parts

$0.739

1k+ parts

$0.666

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-

450

$0.812

$0.739

$0.666

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Verical

USA . 120,000 parts In-Stock

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Arrow

USA . 6,000 parts In-Stock

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$0.075

6,000

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$0.075

EBV Elektronik

Germany . 6,000 parts In-Stock

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6,000

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Rochester

USA . 1,900 parts In-Stock

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$0.056

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$0.046

10k+ parts

$0.041

1,900

-

$0.056

$0.046

$0.041

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 655 parts In-Stock

1+ parts

$0.066

100+ parts

-

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655

$0.066

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Nova Conductors

Japan . 200 parts In-Stock

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$0.161

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-

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200

$0.161

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VNN

France . 21,472 parts In-Stock

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21,472

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Chip Stock

USA . 16,500 parts In-Stock

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Vyrian

USA . 9,275 parts In-Stock

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NAC Semi

USA . 6,000 parts In-Stock

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$0.204

6,000

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$0.204

Rutronik

Germany . 3,000 parts In-Stock

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3,000

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TME

Poland . 3,000 parts In-Stock

1+ parts

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$0.052

3,000

-

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-

$0.052

IBS Electronics

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

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$0.077

3,000

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$0.077

ComSIT Distribution GmbH

Germany . 2,617 parts In-Stock

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2,617

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Distributors (Availability)

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Semicontronic

India . 9,700 parts In-Stock

1+ parts

$0.060

100+ parts

$0.058

1k+ parts

$0.058

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9,700

$0.060

$0.058

$0.058

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Ampacity Inc.

Singapore . 9,526 parts In-Stock

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$0.060

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9,526

$0.060

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Corphita

USA . 801 parts In-Stock

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$0.063

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801

$0.063

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Modulus Dynamics

Lithuania . 2,495 parts In-Stock

1+ parts

$0.146

100+ parts

$0.140

1k+ parts

$0.134

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2,495

$0.146

$0.140

$0.134

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Corohmni

South Africa . 372 parts In-Stock

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$0.146

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372

$0.146

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Argo Parts USA

USA . 3,081 parts In-Stock

1+ parts

$0.155

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$0.150

3,081

$0.155

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$0.150

Continental Prestige Electronics

USA . 1,802 parts In-Stock

1+ parts

$0.155

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$0.152

1,802

$0.155

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$0.152

Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$0.812

100+ parts

$0.739

1k+ parts

$0.666

10k+ parts

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450

$0.812

$0.739

$0.666

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Aztec Data Supply Inc.

USA . 4,544 parts In-Stock

1+ parts

$1.168

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4,544

$1.168

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RC Electronics

USA . 97,420 parts In-Stock

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$0.190

1k+ parts

$0.170

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$0.170

97,420

-

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$0.170

$0.170

QUARKTWIN TECHNOLOGY LTD

USA . 28,575 parts In-Stock

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Perfect Parts

USA . 26,880 parts In-Stock

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Eastek

USA . 21,000 parts In-Stock

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Lixinc

USA . 14,989 parts In-Stock

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Glotronic Ltd.

UK . 2,400 parts In-Stock

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2,400

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Bastille Electronics

Australia . 450 parts In-Stock

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450

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Overview

Unleash the power of cutting-edge technology with the BCM846SH6327XTSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies sets the standard for excellence in Small Signal Bipolar Junction Transistors. Ideal for amplifier applications, this NPN transistor offers exceptional performance and reliability. With a maximum collector-emitter voltage of 65V and a nominal transition frequency of 250MHz, this transistor delivers unparalleled quality and efficiency. Trust Infineon Technologies to provide you with the innovative solutions you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, making the product rugged and reliable for various applications.

Polarity or Channel Type: NPN

Allows for easy integration into existing NPN circuit designs, expanding the compatibility of the product.

Configuration: SEPARATE, 2 ELEMENTS

Enables flexibility in circuit design by having two separate elements that can be used independently or together, enhancing the versatility of the product.

Transistor Application: AMPLIFIER

Optimized for amplification tasks, ensuring high performance and efficiency in signal amplification applications.

Surface Mount: YES

Facilitates easy and efficient PCB assembly, saving time and effort during product manufacturing.

Minimum DC Current Gain (hFE): 200

Provides high gain amplification, allowing for accurate and precise signal amplification in various electronic circuits.

Maximum Collector-Emitter Voltage: 65 V

Allows for operation in higher voltage environments, expanding the range of applications where the product can be used.

Maximum Collector Current (IC): 0.1 A

Handles moderate current levels, making it suitable for a wide range of low to medium power applications.

Nominal Transition Frequency (fT): 250 MHz

Supports high-frequency signal processing, making the product ideal for applications that require rapid switching or amplification of high-frequency signals.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCM846SH6327XTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

65 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCM846SH6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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