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BCM847BV,115

NXP Semiconductors

BCM847BV,115 by NXP Semiconductors

NXP Semiconductors' BCM847BV,115 is a NPN BJT with 2 elements for amplifier applications. It has a max power dissipation of 0.3W, hFE of 200, and fT of 250MHz. With a max operating temp of 150°C and VCE of 45V, it's ideal for small outline packages in surface mount configurations.

Median Price

$0.171

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

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Newark

USA . 3,625 parts In-Stock

1+ parts

$0.572

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$0.258

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$0.152

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3,625

$0.572

$0.258

$0.152

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Chip1Stop

Japan . 1,680 parts In-Stock

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$0.110

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1,680

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$0.110

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Element14

Singapore . 1,675 parts In-Stock

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$0.326

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$0.199

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$0.147

1,675

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$0.326

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$0.147

Farnell

UK . 1,420 parts In-Stock

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$0.122

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$0.101

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$0.094

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$0.101

$0.094

Arrow

USA . 65 parts In-Stock

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$0.171

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Verical

USA . 65 parts In-Stock

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$0.171

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Digiode

USA . 2,556 parts In-Stock

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$0.405

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$0.405

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Nova Conductors

Japan . 85 parts In-Stock

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$1.000

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$1.000

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Chip Stock

USA . 136,000 parts In-Stock

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Component Sense

UK . 50,154 parts In-Stock

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IBS Electronics

USA . 28,000 parts In-Stock

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$0.820

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$0.820

NAC Semi

USA . 24,000 parts In-Stock

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Vyrian

USA . 8,275 parts In-Stock

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Kruse Electronics AG

Switzerland . 4,000 parts In-Stock

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VNN

France . 2,231 parts In-Stock

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Anansix

USA . 954 parts In-Stock

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Prism Electronics

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,687 parts In-Stock

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$0.080

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$0.080

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AZTECH Wire

Italy . 4,229 parts In-Stock

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$0.130

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Corohmni

South Africa . 888 parts In-Stock

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$0.134

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888

$0.134

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Continental Prestige Electronics

USA . 2,102 parts In-Stock

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$0.135

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$0.132

2,102

$0.135

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$0.132

Argo Parts USA

USA . 1,376 parts In-Stock

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$0.135

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$0.131

1,376

$0.135

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$0.131

Semicontronic

India . 1,939 parts In-Stock

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$0.174

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$0.170

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$0.169

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Corphita

USA . 3,399 parts In-Stock

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$0.383

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$0.383

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Aztec Data Supply Inc.

USA . 21,156 parts In-Stock

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$0.660

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Netroflash

USA . 50 parts In-Stock

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Advanced Electronics

New Zealand . 450 parts In-Stock

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$1.147

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$1.044

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$0.941

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Microchip USA

USA . 1,576 parts In-Stock

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$2.730

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Eastek

USA . 8,000 parts In-Stock

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$0.140

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Perfect Parts

USA . 2,305 parts In-Stock

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UNI Independent Distributors

Spain . 2,046 parts In-Stock

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Supply Digital

USA . 941 parts In-Stock

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iodParts Technologies Inc.

India . 900 parts In-Stock

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Authorized Procurement Solutions

USA . 500 parts In-Stock

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Futuretech Components

Singapore . 340 parts In-Stock

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Kepictronics

USA . 320 parts In-Stock

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Overview

Enhance your electronic designs with the high-quality BCM847BV,115 Small Signal Bipolar Junction Transistor from NXP Semiconductors. This NPN transistor offers exceptional performance in amplifier applications, providing customers with reliable and efficient circuit solutions. With a maximum collector-emitter voltage of 45V and a minimum DC current gain of 200, this transistor delivers optimal power dissipation and temperature resistance for long-lasting functionality. Trust NXP Semiconductors for cutting-edge technology and superior components that elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material

PLASTIC/EPOXY - Provides durability and protection for the transistor, making it suitable for various operating conditions.

Polarity or Channel Type

NPN - Offers reliable performance for amplifier applications, ensuring stability and efficiency.

Configuration

SEPARATE, 2 ELEMENTS - Allows for independent operation of each element, enhancing versatility and flexibility in circuit design.

Transistor Application

AMPLIFIER - Specifically designed for amplification tasks, ensuring high-quality signal processing.

Surface Mount

YES - Simplifies the installation process and reduces space requirements, ideal for compact electronic devices.

Package Shape

RECTANGULAR - Facilitates easy integration into circuit boards, optimizing space utilization and overall design efficiency.

Terminal Form

FLAT - Ensures secure and stable connections, minimizing the risk of signal loss or interference.

No. of Elements

2 - Provides dual functionality in a single package, offering increased performance and functionality in a compact design.

No. of Terminals

6 - Allows for versatile connection options, enabling compatibility with a wide range of circuit configurations.

Maximum Power Dissipation (Abs)

0.3 W - Withstands high power levels without overheating, ensuring reliable operation in demanding conditions.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCM847BV,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCM847BV,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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