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BCM856SH6327XTSA1

Infineon Technologies

BCM856SH6327XTSA1 by Infineon Technologies

BCM856SH6327XTSA1 by Infineon Technologies is a PNP small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 65V and a min DC current gain of 200. It is commonly used as an amplifier in various applications.

Median Price

$0.094

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Distrelec

Netherlands . 2,875 parts In-Stock

1+ parts

$0.505

100+ parts

$0.451

1k+ parts

$0.365

10k+ parts

-

2,875

$0.505

$0.451

$0.365

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Verical

USA . 86,247 parts In-Stock

1+ parts

-

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$0.079

86,247

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$0.079

Arrow

USA . 21,000 parts In-Stock

1+ parts

-

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$0.068

21,000

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$0.068

RS (Exports)

UK . 2,950 parts In-Stock

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-

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$0.109

2,950

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$0.109

Rochester

USA . 2,720 parts In-Stock

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-

100+ parts

$0.066

1k+ parts

$0.054

10k+ parts

$0.049

2,720

-

$0.066

$0.054

$0.049

DigiKey

USA . 2,720 parts In-Stock

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-

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$0.110

2,720

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$0.110

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 926 parts In-Stock

1+ parts

$0.066

100+ parts

-

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926

$0.066

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Nova Conductors

Japan . 100 parts In-Stock

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$0.151

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-

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100

$0.151

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TME

Poland . 2,935 parts In-Stock

1+ parts

$0.210

100+ parts

$0.120

1k+ parts

$0.090

10k+ parts

-

2,935

$0.210

$0.120

$0.090

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Vyrian

USA . 55,496 parts In-Stock

1+ parts

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55,496

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Rutronik

Germany . 15,000 parts In-Stock

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$0.083

15,000

-

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$0.083

NAC Semi

USA . 6,000 parts In-Stock

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$0.252

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$0.252

VNN

France . 2,538 parts In-Stock

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2,538

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Distributors (Availability)

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Semicontronic

India . 55,314 parts In-Stock

1+ parts

$0.058

100+ parts

$0.057

1k+ parts

$0.056

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55,314

$0.058

$0.057

$0.056

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Ampacity Inc.

Singapore . 55,265 parts In-Stock

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$0.058

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55,265

$0.058

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Corphita

USA . 669 parts In-Stock

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$0.063

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669

$0.063

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Continental Prestige Electronics

USA . 5,387 parts In-Stock

1+ parts

$0.151

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-

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$0.148

5,387

$0.151

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-

$0.148

Argo Parts USA

USA . 2,423 parts In-Stock

1+ parts

$0.151

100+ parts

-

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10k+ parts

$0.146

2,423

$0.151

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-

$0.146

Modulus Dynamics

Lithuania . 16,422 parts In-Stock

1+ parts

$0.151

100+ parts

$0.145

1k+ parts

$0.139

10k+ parts

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16,422

$0.151

$0.145

$0.139

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Corohmni

South Africa . 69 parts In-Stock

1+ parts

$0.151

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69

$0.151

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Bastille Electronics

Australia . 40 parts In-Stock

1+ parts

$0.151

100+ parts

$0.143

1k+ parts

$0.136

10k+ parts

$0.134

40

$0.151

$0.143

$0.136

$0.134

Aztec Data Supply Inc.

USA . 2,976 parts In-Stock

1+ parts

$0.320

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2,976

$0.320

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Glotronic Ltd.

UK . 43,200 parts In-Stock

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43,200

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Perfect Parts

USA . 42,806 parts In-Stock

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42,806

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Eastek

USA . 36,000 parts In-Stock

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$0.220

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36,000

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$0.220

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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15,000

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Overview

Discover the BCM856SH6327XTSA1 by Infineon Technologies, a high-quality Small Signal Bipolar Junction Transistor (BJT) that delivers exceptional performance for amplifier applications. As a leading manufacturer, Infineon Technologies guarantees reliability and precision in every product. With its separate configuration and two elements, this transistor offers outstanding versatility. Its surface mount capability and small outline package make it easy to integrate into various designs. Boasting a maximum collector-emitter voltage of 65V and a nominal transition frequency of 250MHz, this transistor ensures optimal amplification. Trust the BCM856SH6327XTSA1 to deliver superior results and unlock the full potential of your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good thermal conductivity and helps in dissipating heat efficiently, making it suitable for applications where heat management is crucial.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits and offer complementary functionality to NPN transistors, providing flexibility in circuit design.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor provides high gain and low noise, making it ideal for amplification tasks.

Minimum DC Current Gain (hFE): 200

With a minimum DC current gain of 200, this transistor offers high amplification capabilities, ensuring accurate signal amplification in applications.

Maximum Collector-Emitter Voltage: 65 V

The high maximum collector-emitter voltage of 65V makes this transistor suitable for applications where higher voltage handling capabilities are required.

Nominal Transition Frequency (fT): 250 MHz

With a high nominal transition frequency of 250 MHz, this transistor can operate at high frequencies, making it suitable for applications requiring fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCM856SH6327XTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

65 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCM856SH6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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