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BCR35PNH6433XTMA1

Infineon Technologies

BCR35PNH6433XTMA1 by Infineon Technologies

Infineon's BCR35PNH6433XTMA1 is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 elements with built-in resistors, a max VCE of 50V, and hFE of 70. This surface-mount transistor has a package style of small outline and operates at a nominal fT of 150MHz.

Median Price

$0.173

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Arrow

USA . 40,000 parts In-Stock

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Verical

USA . 40,000 parts In-Stock

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NAC Semi

USA . 10,000 parts In-Stock

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Vyrian

USA . 8,541 parts In-Stock

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VNN

France . 3,849 parts In-Stock

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Digiode

USA . 848 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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Modulus Dynamics

Lithuania . 5,390 parts In-Stock

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$0.779

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$0.748

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$0.717

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Aztec Data Supply Inc.

USA . 1,622 parts In-Stock

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$1.480

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Corohmni

South Africa . 893 parts In-Stock

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AZTECH Wire

Italy . 314 parts In-Stock

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Ampacity Inc.

Singapore . 36,497 parts In-Stock

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Glotronic Ltd.

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RC Electronics

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Argo Parts USA

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Bastille Electronics

Australia . 870 parts In-Stock

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Continental Prestige Electronics

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Corphita

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Overview

Looking for a reliable solution for your switching applications? Look no further than the BCR35PNH6433XTMA1 by Infineon Technologies. With a reputation for top-notch quality and innovation, Infineon delivers a small signal bipolar junction transistor that offers exceptional performance and reliability. Whether you're in need of NPN or PNP transistors with built-in resistors, this product has got you covered. Perfect for a wide range of applications, this transistor is sure to provide value and efficiency to your projects. Trust Infineon for all your electronic component needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications and environments.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP options allows for versatile use in different circuit configurations and applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making it convenient for various switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in tasks that require rapid on/off functions.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on PCBs, saving assembly time and reducing overall size.

Package Shape: RECTANGULAR

Rectangular shape provides a compact and space-saving design, ideal for applications where board space is limited.

Terminal Form: GULL WING

Gull wing terminals offer secure and reliable connections during surface mount assembly, ensuring stable operation of the transistor.

Minimum DC Current Gain (hFE): 70

The high minimum DC current gain ensures reliable and consistent amplification of signals in a circuit, leading to stable performance.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum collector-emitter voltage, the transistor can withstand higher voltage levels, providing versatility for various applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, ensuring consistent operation of the transistor over time.

Maximum Collector Current (IC): 0.1 A

The maximum collector current rating allows the transistor to handle higher current loads, making it suitable for a wide range of applications.

Terminal Position: DUAL

Dual terminal position simplifies installation and connection, providing convenience during assembly and enhancing overall reliability.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high reliability and quality, making it suitable for automotive applications and demanding environments.

Nominal Transition Frequency (fT): 150 MHz

The high nominal transition frequency allows for fast switching speeds and efficient operation in high-frequency applications, enhancing overall performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR35PNH6433XTMA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G6

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR35PNH6433XTMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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