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BCR35PN-E6327

Infineon Technologies

BCR35PN-E6327 by Infineon Technologies

BCR35PN-E6327 by Infineon Technologies is a Small Signal BJT with NPN and PNP channels. It features 2 elements with built-in resistor for switching applications. With a max collector-emitter voltage of 50V, it has a transition frequency of 150MHz in a small outline package suitable for surface mount technology.

Median Price

$0.300

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

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Chip Stock

USA . 15,314 parts In-Stock

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A2Z Electronics, Inc.

USA . 12,900 parts In-Stock

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ComSIT Distribution GmbH

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ComSIT USA

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Bristol Electronics

USA . 11,100 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 6,000 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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J2 Sourcing AB

Sweden . 3,000 parts In-Stock

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Cyclops Electronics Ltd

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VNN

France . 2,222 parts In-Stock

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Holdelec - ElecDif-Pro

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Vyrian

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Nova Conductors

Japan . 450 parts In-Stock

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Digiode

USA . 236 parts In-Stock

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Pegasus Components GmbH

Germany . 192 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 455 parts In-Stock

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$0.482

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455

$0.482

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Aztec Data Supply Inc.

USA . 2,289 parts In-Stock

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$0.870

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$0.870

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Modulus Dynamics

Lithuania . 1,027 parts In-Stock

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$1.133

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$1.088

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$1.042

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$1.133

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AZTECH Wire

Italy . 302 parts In-Stock

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$9.146

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Ampacity Inc.

Singapore . 1,426 parts In-Stock

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$24.050

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A-Z Elektronik GmbH

Germany . 17,709 parts In-Stock

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Lixinc

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Cyclops Electronics Ltd (Excess)

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Continental Prestige Electronics

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Argo Parts USA

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Glotronic Ltd.

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Alle Elektronik GmbH

Germany . 1,360 parts In-Stock

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Bastille Electronics

Australia . 900 parts In-Stock

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Corphita

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Overview

Discover the power of innovation with the BCR35PN-E6327 by Infineon Technologies, a cutting-edge Small Signal Bipolar Junction Transistor that delivers unparalleled performance in switching applications. With Infineon's reputation for top-quality components and advanced technology, this transistor offers customers reliability and efficiency like never before. Whether you're looking to enhance your electronic designs or streamline your manufacturing process, the BCR35PN-E6327 provides the perfect solution with its high power dissipation, dual-element configuration, and versatile surface-mount design. Trust Infineon to take your projects to the next level.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type:

NPN AND PNP - Offers flexibility for different circuit designs and requirements.

Configuration:

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR - Allows for easy integration into circuits without requiring additional components.

Transistor Application:

SWITCHING - Ideal for applications that require fast switching speeds.

Surface Mount:

YES - Enables easy and convenient surface mounting on PCBs.

Package Shape:

RECTANGULAR - Fits well in compact spaces, maximizing efficiency in circuit design.

Terminal Form:

GULL WING - Facilitates easy soldering and secure connection to the circuit.

No. of Elements:

2 - Provides versatility in circuit configurations.

No. of Terminals:

6 - Offers multiple connection points for a variety of circuit designs.

Maximum Power Dissipation (Abs):

0.25 W - Suitable for applications with low to moderate power requirements.

Package Style (Meter):

SMALL OUTLINE - Saves space in circuit layout while maintaining performance.

Minimum DC Current Gain (hFE):

70 - Ensures stable and reliable amplification in the circuit.

Maximum Collector-Emitter Voltage:

50 V - Supports a wide range of voltage requirements in different applications.

Transistor Element Material:

SILICON - Provides excellent performance and reliability as a semiconductor material.

Maximum Collector Current (IC):

0.1 A - Capable of handling moderate current levels in various circuit applications.

Terminal Finish:

MATTE TIN - Enhances conductivity and ensures a reliable connection with other components.

Terminal Position:

DUAL - Allows for versatile installation options in different circuit layouts.

Peak Reflow Temperature °C:

260 - Withstands high-temperature reflow processes during PCB assembly.

Nominal Transition Frequency (fT):

150 MHz - Supports high-frequency operation in various signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR35PN-E6327 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR35PN-E6327 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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