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BCR35PN-E6433

Infineon Technologies

BCR35PN-E6433 by Infineon Technologies

BCR35PN-E6433 by Infineon Technologies is a small signal bipolar junction transistor (BJT) with NPN and PNP polarity. It has a max collector-emitter voltage of 50V and a min DC current gain of 70. This transistor is commonly used for switching applications due to its built-in resistor and high transition frequency of 150MHz.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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LIBRA Elektronik GmbH

Germany . 7,869 parts In-Stock

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VNN

France . 4,770 parts In-Stock

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Nova Conductors

Japan . 900 parts In-Stock

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900

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Vyrian

USA . 835 parts In-Stock

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835

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Digiode

USA . 775 parts In-Stock

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775

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Corohmni

South Africa . 1,004 parts In-Stock

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$0.764

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1,004

$0.764

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Aztec Data Supply Inc.

USA . 843 parts In-Stock

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$1.520

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843

$1.520

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Modulus Dynamics

Lithuania . 25,113 parts In-Stock

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$1.822

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$1.749

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$1.676

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25,113

$1.822

$1.749

$1.676

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AZTECH Wire

Italy . 309 parts In-Stock

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$10.504

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309

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Ampacity Inc.

Singapore . 878 parts In-Stock

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$48.050

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878

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A-Z Elektronik GmbH

Germany . 18,000 parts In-Stock

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Kepictronics

USA . 10,000 parts In-Stock

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Metaverse IC Inc.

Canada . 10,000 parts In-Stock

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Continental Prestige Electronics

USA . 6,496 parts In-Stock

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Argo Parts USA

USA . 4,029 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 2,000 parts In-Stock

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Corphita

USA . 766 parts In-Stock

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766

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Bastille Electronics

Australia . 100 parts In-Stock

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Overview

Experience the power and precision of the BCR35PN-E6433 by Infineon Technologies. As a trusted manufacturer in the industry, Infineon Technologies delivers high-quality products that excel in performance and durability. The BCR35PN-E6433 belongs to the category of Small Signal Bipolar Junction Transistors (BJT), making it perfect for switching applications. With its NPN and PNP polarity or channel type, this transistor offers versatility and flexibility in various electronic circuits. Its compact rectangular package shape and gull wing terminal form ensure easy installation and seamless integration. Whether you're a professional or an enthusiast, the BCR35PN-E6433 guarantees maximum power dissipation, superior collector-emitter voltage, and exceptional current gain. Discover the endless possibilities with this remarkable product and unlock a world of innovation today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, making it suitable for various applications.

Polarity or Channel Type: NPN AND PNP

Allows flexibility in circuit design as both NPN and PNP transistor types are included.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Surface Mount: YES

Easy to mount on PCBs, allowing for efficient assembly and space-saving design.

Terminal Form: GULL WING

Provides secure connection and easy soldering on the PCB.

No. of Elements: 2

Having 2 elements in one package provides versatility in circuit design.

Maximum Power Dissipation (Abs): 0.25 W

Can handle power dissipation up to 0.25W, suitable for various applications.

Nominal Transition Frequency (fT): 150 MHz

Higher transition frequency allows for faster switching speeds, enhancing overall performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR35PN-E6433 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 4.7

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR35PN-E6433 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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