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BCR133SH6433XTMA1

Infineon Technologies

BCR133SH6433XTMA1 by Infineon Technologies

Infineon's BCR133SH6433XTMA1 is a NPN BJT with 2 elements and built-in resistor, ideal for switching applications. With a hFE of 30, it offers a max VCE of 50V and IC of 0.1A. This small outline transistor in gull wing package has fT of 130MHz, meeting AEC-Q101 standards.

Median Price

$0.095

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Verical

USA . 160,000 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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$0.126

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50

$0.126

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Rutronik

Germany . 10,000 parts In-Stock

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$0.057

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$0.057

NAC Semi

USA . 10,000 parts In-Stock

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$0.095

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Vyrian

USA . 2,247 parts In-Stock

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VNN

France . 987 parts In-Stock

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Digiode

USA . 38 parts In-Stock

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Distributors (Availability)

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Continental Prestige Electronics

USA . 3,600 parts In-Stock

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$0.126

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$0.123

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$0.126

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$0.123

Argo Parts USA

USA . 3,581 parts In-Stock

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$0.126

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$0.122

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Aztec Data Supply Inc.

USA . 100 parts In-Stock

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$1.150

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Corohmni

South Africa . 211 parts In-Stock

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$1.418

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Modulus Dynamics

Lithuania . 10,619 parts In-Stock

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$1.445

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$1.387

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$1.329

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AZTECH Wire

Italy . 387 parts In-Stock

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$9.220

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Ampacity Inc.

Singapore . 84,810 parts In-Stock

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$30.050

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Semicontronic

India . 84,669 parts In-Stock

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$60.050

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$58.549

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$58.248

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GreenTree Electronics

Israel . 390,000 parts In-Stock

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$0.120

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$0.117

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$0.117

Corphita

USA . 982 parts In-Stock

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982

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Overview

Discover the power of innovation with the BCR133SH6433XTMA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies has created a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers unmatched performance and reliability. Ideal for switching applications, this NPN transistor features a unique configuration with built-in resistors, making it a versatile choice for various electronic projects. With a maximum collector-emitter voltage of 50V and a nominal transition frequency of 130 MHz, this cutting-edge component delivers exceptional value and efficiency to customers seeking top-notch solutions for their designs. Elevate your projects with the BCR133SH6433XTMA1 and experience the difference that superior technology can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching purposes, offering high efficiency and performance.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

This configuration allows for easy integration and use in circuits, and the built-in resistor simplifies the circuit design process.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low power consumption.

Surface Mount: YES

Surface mount capability makes it easy to mount and solder the transistor onto circuit boards, saving space and improving manufacturing efficiency.

Package Shape: RECTANGULAR

Rectangular package shape provides a compact and space-saving design, suitable for modern electronic devices with limited space.

Terminal Form: GULL WING

Gull wing terminals offer easy and reliable soldering connections, ensuring good electrical conductivity and mechanical stability.

No. of Elements: 2

Having 2 elements allows for increased functionality and versatility in circuit designs, offering more options for customization.

No. of Terminals: 6

6 terminals provide multiple connection points for efficient and flexible circuit integration, accommodating various input and output requirements.

Package Style (Meter): SMALL OUTLINE

Small outline package style is ideal for compact and portable electronic devices, offering high performance in a small form factor.

Minimum DC Current Gain (hFE): 30

Minimum DC current gain of 30 ensures efficient amplification and signal processing, enhancing overall circuit performance.

Maximum Collector-Emitter Voltage: 50 V

With a maximum collector-emitter voltage of 50V, this transistor can handle a wide range of voltage levels, making it versatile for different applications.

Transistor Element Material: SILICON

Silicon transistor elements are known for their high reliability, stability, and performance, making them a popular choice for various electronic applications.

Maximum Collector Current (IC): 0.1 A

Maximum collector current of 0.1A allows for handling moderate power levels, suitable for low to medium power applications.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit layout and connections, allowing for easy integration into different circuit designs.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standards ensures high reliability, quality, and performance, making it suitable for automotive and industrial applications.

Nominal Transition Frequency (fT): 130 MHz

Nominal transition frequency of 130MHz indicates high-speed operation and excellent frequency response, ideal for amplification and signal processing tasks.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR133SH6433XTMA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G6

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR133SH6433XTMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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