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BC847SH6433XTMA1

Infineon Technologies

BC847SH6433XTMA1 by Infineon Technologies

Infineon BC847SH6433XTMA1 is a NPN BJT with 2 elements, hFE of 200, and VCE of 45V. Ideal for amplifier applications, it has a fT of 250MHz and IC max of 0.1A. This small outline transistor in gull wing package suits surface mount designs per AEC-Q101 standards.

Median Price

$0.110

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Verical

USA . 20,000 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Chip Stock

USA . 126,700 parts In-Stock

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Vyrian

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Digiode

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Continental Prestige Electronics

USA . 3,866 parts In-Stock

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Argo Parts USA

USA . 3,585 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$0.104

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$0.102

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Modulus Dynamics

Lithuania . 6,217 parts In-Stock

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Corohmni

South Africa . 101 parts In-Stock

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Aztec Data Supply Inc.

USA . 49,931 parts In-Stock

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Ampacity Inc.

Singapore . 339,559 parts In-Stock

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Andel Nordic

Denmark . 1,515 parts In-Stock

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AZTECH Wire

Italy . 774 parts In-Stock

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Semicontronic

India . 339,534 parts In-Stock

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Eastek

USA . 170,000 parts In-Stock

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Microchip USA

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Glotronic Ltd.

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Corphita

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Overview

Unlock the potential of your electronic designs with the BC847SH6433XTMA1 by Infineon Technologies. As a trusted manufacturer in the industry, Infineon delivers superior quality small signal bipolar junction transistors that are ideal for amplifier applications. With a compact rectangular package and gull wing terminals, this NPN transistor offers versatility and reliability for your projects. Trust in the 200 minimum DC current gain and 45V maximum collector-emitter voltage for optimal performance. Elevate your designs with the BC847SH6433XTMA1 and experience the innovation and precision that only Infineon can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ensuring reliable performance in various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and signal processing circuits, making this product suitable for those applications.

Configuration: SEPARATE, 2 ELEMENTS

Having separate elements allows for greater control and flexibility in circuit design, making it ideal for custom amplifier configurations.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor delivers high performance and efficiency in amplifying signals.

Surface Mount: YES

Being surface mountable simplifies the manufacturing process and allows for compact and space-saving designs in electronic devices.

Terminal Form: GULL WING

The gull wing terminal form makes soldering easier and more reliable, ensuring a secure connection in the circuit.

No. of Elements: 2

Having 2 elements provides versatility in circuit design, allowing for a wide range of amplifier configurations.

No. of Terminals: 6

With 6 terminals, there are more connection points available for complex circuit designs, enabling greater functionality.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making it suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 200

The high minimum DC current gain ensures stable and consistent amplification of signals, resulting in reliable performance.

Maximum Collector-Emitter Voltage: 45 V

With a maximum collector-emitter voltage of 45V, this transistor can handle a wide range of voltage levels, making it versatile in different applications.

Transistor Element Material: SILICON

Silicon transistors offer high efficiency and performance, making this product a reliable choice for amplifier circuits.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1A allows for high power handling capability, making it suitable for various amplifier applications.

Terminal Position: DUAL

Having dual terminal positions makes installation and connection easier, reducing the risk of errors in circuit assembly.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures high quality and reliability, making this transistor suitable for automotive applications.

Nominal Transition Frequency (fT): 250 MHz

With a high nominal transition frequency of 250 MHz, this transistor is capable of high-speed signal amplification, ideal for applications requiring fast processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC847SH6433XTMA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G6

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC847SH6433XTMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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