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EMG2DXV5T5G

Onsemi

EMG2DXV5T5G by Onsemi

The Onsemi EMG2DXV5T5G is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max operating temp of 150 °C, and min DC current gain of 80 (hFE). Ideal for switching applications in surface mount designs due to its small outline package style.

Median Price

$0.091

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 5,800 parts In-Stock

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$0.051

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5,800

$0.051

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Rochester

USA . 281,769 parts In-Stock

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$0.091

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$0.075

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$0.067

281,769

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$0.091

$0.075

$0.067

Verical

USA . 100,485 parts In-Stock

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$0.084

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$0.084

Chip1Stop

Japan . 9,800 parts In-Stock

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9,800

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Flip Electronics (Authorized)

USA . 2,865 parts In-Stock

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Element14

Singapore . 636 parts In-Stock

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$0.308

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$0.147

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$0.132

636

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$0.147

$0.132

Farnell

UK . 631 parts In-Stock

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$0.168

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$0.080

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631

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$0.080

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Distributors (In-Stock)

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Digiode

USA . 404 parts In-Stock

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$0.048

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404

$0.048

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Flip Electronics

USA . 34,865 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 6,782 parts In-Stock

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Bristol Electronics

USA . 6,782 parts In-Stock

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Dan-Mar Components

USA . 6,782 parts In-Stock

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Vyrian

USA . 2,256 parts In-Stock

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Corphita

USA . 981 parts In-Stock

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$0.046

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981

$0.046

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Corohmni

South Africa . 354 parts In-Stock

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$0.051

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354

$0.051

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Component Stockers USA

USA . 312,811 parts In-Stock

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$0.080

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$0.070

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$0.060

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$0.060

312,811

$0.080

$0.070

$0.060

$0.060

AZTECH Wire

Italy . 360 parts In-Stock

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$21.030

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360

$21.030

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Native Components

USA . 218 parts In-Stock

1+ parts

$314.584

100+ parts

$308.292

1k+ parts

$305.146

10k+ parts

$302.000

218

$314.584

$308.292

$305.146

$302.000

Northwest PG Solutions

USA . 1,575 parts In-Stock

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$346.042

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1,575

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Kepictronics

USA . 200,000 parts In-Stock

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Perfect Parts

USA . 8,764 parts In-Stock

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TANS Electronics

Latvia . 6,355 parts In-Stock

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SupplyDigital Components

Austria . 5,628 parts In-Stock

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Problanco Electronics

Mexico . 3,730 parts In-Stock

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Kulean Microsystems

USA . 3,503 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,459 parts In-Stock

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UHIMA Technologies

Türkiye . 811 parts In-Stock

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Continental Prestige Electronics

USA . 714 parts In-Stock

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$0.080

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Overview

Unleash the power of innovation with the EMG2DXV5T5G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) that is designed for switching applications. With its common emitter configuration and 2 elements featuring built-in resistors, this NPN transistor offers unmatched performance and reliability. Its compact rectangular package shape and surface mount capability make it ideal for a wide range of electronic devices. Experience seamless operation and exceptional efficiency with this product, providing customers with unbeatable value and cutting-edge technology. Elevate your designs with the EMG2DXV5T5G and take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching circuits and amplifiers, providing versatility in circuit design.

Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Having built-in resistors simplifies circuit design and saves space by eliminating the need for external components.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in fast switching operations.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on PCBs, saving assembly time.

Maximum Power Dissipation: 0.338 W

With a high power dissipation capacity, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 80

A high DC current gain ensures efficient amplification and switching performance in various circuit configurations.

Maximum Operating Temperature: 150 °C

Operating efficiently up to 150 °C, this transistor can withstand elevated temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 50 V

With a high collector-emitter voltage rating, this transistor can be used in circuits with higher voltage requirements.

Maximum Collector Current (IC): 0.1 A

Capable of handling up to 0.1A of collector current, making it suitable for low to moderate current applications.

Peak Reflow Temperature: 260 °C

With a high peak reflow temperature, the transistor can endure the soldering process without sustaining damage.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) EMG2DXV5T5G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

EMG2DXV5T5G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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