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EMG2DXV5T5

Onsemi

EMG2DXV5T5 by Onsemi

The Onsemi EMG2DXV5T5 is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, common emitter configuration, and small outline package style. Ideal for switching applications, it can handle a max collector current of 0.1A and has a min DC current gain of 80 (hFE).

Median Price

$0.050

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 64,000 parts In-Stock

1+ parts

-

100+ parts

$0.053

1k+ parts

$0.044

10k+ parts

$0.039

64,000

-

$0.053

$0.044

$0.039

DigiKey

USA . 64,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.050

64,000

-

-

-

$0.050

Verical

USA . 64,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.049

64,000

-

-

-

$0.049

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,169 parts In-Stock

1+ parts

$0.041

100+ parts

-

1k+ parts

-

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2,169

$0.041

-

-

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Vyrian

USA . 576 parts In-Stock

1+ parts

$0.043

100+ parts

-

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-

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576

$0.043

-

-

-

Distributors (Availability)

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Corphita

USA . 1,176 parts In-Stock

1+ parts

$0.039

100+ parts

-

1k+ parts

-

10k+ parts

-

1,176

$0.039

-

-

-

Advanced Electronics

New Zealand . 20 parts In-Stock

1+ parts

$0.926

100+ parts

$0.843

1k+ parts

$0.759

10k+ parts

-

20

$0.926

$0.843

$0.759

-

Corohmni

South Africa . 831 parts In-Stock

1+ parts

$1.339

100+ parts

-

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-

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-

831

$1.339

-

-

-

Continental Prestige Electronics

USA . 64,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.041

64,000

-

-

-

$0.041

Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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20,000

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Assy Fe

Spain . 7,000 parts In-Stock

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7,000

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TANS Electronics

Latvia . 6,916 parts In-Stock

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6,916

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Kulean Microsystems

USA . 6,712 parts In-Stock

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6,712

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SupplyDigital Components

Austria . 5,338 parts In-Stock

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5,338

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Kepictronics

USA . 5,000 parts In-Stock

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5,000

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A-Z Elektronik GmbH

Germany . 2,100 parts In-Stock

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2,100

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Problanco Electronics

Mexico . 1,077 parts In-Stock

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1,077

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Northwest PG Solutions

USA . 710 parts In-Stock

1+ parts

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$4.092

10k+ parts

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710

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$4.092

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Native Components

USA . 289 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$4.050

10k+ parts

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289

-

-

$4.050

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UHIMA Technologies

Türkiye . 65 parts In-Stock

1+ parts

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65

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Overview

Enhance your electronic projects with the EMG2DXV5T5 by Onsemi, a high-quality NPN bipolar junction transistor designed for switching applications. Manufactured by Onsemi, a trusted name in semiconductor solutions, this small signal BJT offers reliable performance and durability. With its common emitter configuration and built-in resistor, this transistor provides added convenience and versatility. Ideal for surface mount applications, this rectangular package with five terminals delivers exceptional power dissipation and collector-emitter voltage. Upgrade your designs with the EMG2DXV5T5 and experience the superior quality and value that Onsemi products bring to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection for the transistor, making it suitable for various environments and applications.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration into circuits and provides reliable performance in switching applications.

Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Common emitter configuration with built-in resistor simplifies circuit design and saves space, making it convenient for applications requiring switching functionality.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy and space-saving PCB integration, making production and assembly processes more efficient.

Package Shape: RECTANGULAR

Rectangular shape provides a compact footprint, ideal for applications where space is limited.

Terminal Form: FLAT

Flat terminal form ensures secure and stable connections, contributing to the overall reliability of the product.

No. of Elements: 2

Having 2 elements allows for more versatility in circuit design and functionality.

No. of Terminals: 5

5 terminals provide additional connection options, offering flexibility in circuit configurations.

Maximum Power Dissipation (Abs): 0.338 W

With a high maximum power dissipation, this transistor can handle relatively higher power levels without overheating or damage.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and allows for compact and efficient circuit designs.

Minimum DC Current Gain (hFE): 80

High minimum DC current gain ensures stable and consistent amplification performance in various applications.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum collector-emitter voltage, this transistor can be used in applications with higher voltage requirements.

Transistor Element Material: SILICON

Silicon material offers reliable and consistent performance characteristics, making the transistor highly durable and efficient.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels in various applications.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and corrosion resistance, ensuring reliable connections and long-term performance.

Terminal Position: DUAL

Dual terminal position allows for flexibility in PCB layout and connections, making it easier to integrate into different circuit designs.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time at peak reflow temperature of 30 seconds, this transistor can endure reflow soldering processes without damage.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this transistor can withstand high-temperature soldering processes, ensuring reliable assembly onto PCBs.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) EMG2DXV5T5 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

EMG2DXV5T5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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