Loading...

EMG2DXV5T1G

Onsemi

EMG2DXV5T1G by Onsemi

The Onsemi EMG2DXV5T1G is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80 (hFE). Ideal for switching applications in small outline packages.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20,000

-

-

-

-

Vyrian

USA . 6,905 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,905

-

-

-

-

Digiode

USA . 516 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

516

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 581 parts In-Stock

1+ parts

$1.483

100+ parts

-

1k+ parts

-

10k+ parts

-

581

$1.483

-

-

-

Northwest PG Solutions

USA . 911 parts In-Stock

1+ parts

$1.631

100+ parts

-

1k+ parts

-

10k+ parts

-

911

$1.631

-

-

-

AZTECH Wire

Italy . 457 parts In-Stock

1+ parts

$8.190

100+ parts

-

1k+ parts

-

10k+ parts

-

457

$8.190

-

-

-

Perfect Parts

USA . 7,573 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,573

-

-

-

-

A-Z Elektronik GmbH

Germany . 7,202 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,202

-

-

-

-

TANS Electronics

Latvia . 6,073 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,073

-

-

-

-

Kulean Microsystems

USA . 5,529 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,529

-

-

-

-

Problanco Electronics

Mexico . 5,516 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,516

-

-

-

-

SupplyDigital Components

Austria . 2,024 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,024

-

-

-

-

Authorized Procurement Solutions

USA . 1,128 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,128

-

-

-

-

Corphita

USA . 546 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

546

-

-

-

-

Corohmni

South Africa . 465 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

465

-

-

-

-

UHIMA Technologies

Türkiye . 113 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

113

-

-

-

-

Overview

Looking to upgrade your electronic devices with high-quality components? Look no further than the EMG2DXV5T1G by Onsemi. Known for their reliability and innovation, Onsemi delivers top-notch Small Signal Bipolar Junction Transistors like this one, perfect for switching applications. With its NPN configuration and built-in resistor, this transistor offers superior performance and efficiency. Whether you're a hobbyist or a professional, the EMG2DXV5T1G provides unmatched value and benefits. Upgrade your projects today with this cutting-edge component from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good electrical insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering high current gain and fast switching speeds.

Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor allows for easier circuit design and helps in temperature stabilization, providing improved performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Surface Mount: YES

Allows for easy and reliable mounting on circuit boards, saving space and enabling automated assembly processes.

Package Shape: RECTANGULAR

Rectangular shape provides a compact footprint, making it suitable for applications where space is limited.

No. of Elements: 2

Having 2 elements allows for increased functionality and versatility in circuit design.

No. of Terminals: 5

More terminals provide flexibility in connection options, enabling diverse circuit configurations.

Maximum Power Dissipation (Abs): 0.338 W

Can handle a relatively high power dissipation, making it suitable for applications where heat dissipation is a concern.

Minimum DC Current Gain (hFE): 80

High DC current gain ensures efficient amplification and switching capabilities in the circuit.

Maximum Collector-Emitter Voltage: 50 V

Supports a high collector-emitter voltage, making it suitable for applications with higher voltage requirements.

Transistor Element Material: SILICON

Silicon material provides good performance characteristics, ensuring reliable and consistent operation.

Maximum Collector Current (IC): 0.1 A

Can handle a moderate collector current, suitable for many common circuit applications.

Terminal Finish: TIN

Tin terminal finish ensures good solderability and corrosion resistance, extending the lifespan of the transistor.

Terminal Position: DUAL

Dual terminal position allows for more secure and stable connections in the circuit.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand a certain amount of time at peak reflow temperature during soldering process, ensuring reliable solder joints.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability allows for efficient and reliable soldering process.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) EMG2DXV5T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

5

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

EMG2DXV5T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 4