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2SA1576ART1G

Onsemi

2SA1576ART1G by Onsemi

2SA1576ART1G by Onsemi is a PNP BJT with hFE of 180, VCE of 50V, and IC of 0.1A. Ideal for amplifier applications, it's a surface-mount transistor in a small outline package with Gull Wing terminals.

Median Price

$0.030

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 132,000 parts In-Stock

1+ parts

-

100+ parts

$0.030

1k+ parts

$0.025

10k+ parts

$0.023

132,000

-

$0.030

$0.025

$0.023

Verical

USA . 132,000 parts In-Stock

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132,000

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Distributors (In-Stock)

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Digiode

USA . 2,466 parts In-Stock

1+ parts

$0.024

100+ parts

-

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2,466

$0.024

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Vyrian

USA . 7,732 parts In-Stock

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7,732

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,238 parts In-Stock

1+ parts

$0.022

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-

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2,238

$0.022

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Corohmni

South Africa . 210 parts In-Stock

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$0.025

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210

$0.025

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Component Stockers USA

USA . 193,825 parts In-Stock

1+ parts

$0.030

100+ parts

$0.020

1k+ parts

$0.020

10k+ parts

$0.020

193,825

$0.030

$0.020

$0.020

$0.020

Northwest PG Solutions

USA . 591 parts In-Stock

1+ parts

$3.388

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-

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591

$3.388

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AZTECH Wire

Italy . 87 parts In-Stock

1+ parts

$17.340

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87

$17.340

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Continental Prestige Electronics

USA . 132,000 parts In-Stock

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$0.020

132,000

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$0.020

QUARKTWIN TECHNOLOGY LTD

USA . 12,612 parts In-Stock

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12,612

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TANS Electronics

Latvia . 7,416 parts In-Stock

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7,416

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Kulean Microsystems

USA . 4,257 parts In-Stock

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4,257

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SupplyDigital Components

Austria . 2,866 parts In-Stock

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2,866

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UHIMA Technologies

Türkiye . 577 parts In-Stock

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577

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Native Components

USA . 396 parts In-Stock

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$2.988

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396

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$2.988

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Problanco Electronics

Mexico . 228 parts In-Stock

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228

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Overview

Enhance your electronic projects with the reliable and high-quality 2SA1576ART1G by Onsemi. Manufactured by the trusted brand Onsemi, this Small Signal Bipolar Junction Transistor (BJT) offers superior performance in amplifier applications. With its PNP configuration and maximum collector-emitter voltage of 50V, this transistor is perfect for a wide range of projects. Experience the value and benefits of using Onsemi's 2SA1576ART1G for your next design and elevate your creations to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties, making the transistor suitable for a wide range of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this transistor well-suited for amplifier applications.

Configuration: SINGLE

Single configuration transistors are easy to work with and ideal for simple amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring reliable performance in signal amplification tasks.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, making assembly more efficient.

Package Shape: RECTANGULAR

Rectangular shape is space-efficient and fits well on modern circuit board layouts.

Terminal Form: GULL WING

Gull wing terminals provide a strong mechanical connection and are suitable for automated soldering processes.

No. of Terminals: 3

Three terminals make the transistor easy to connect and work with in amplifier circuits.

Package Style (Meter): SMALL OUTLINE

Small outline packages are space-saving and ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 180

High minimum DC current gain ensures stable and consistent amplification performance.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to medium voltage amplifier circuits, providing a good range for various applications.

Transistor Element Material: SILICON

Silicon transistors are durable and reliable, making this transistor a long-lasting choice for amplifier circuits.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current amplification tasks.

Terminal Finish: Tin (Sn)

Tin terminal finish provides good corrosion resistance, ensuring long-term reliability in various environments.

Terminal Position: DUAL

Dual terminal position makes it easy to solder and connect the transistor in amplifier circuits.

Maximum Time At Peak Reflow Temperature (s): 40

Can withstand peak reflow temperatures for up to 40 seconds, ensuring reliability during soldering processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance of 260 °C allows for efficient and reliable soldering processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SA1576ART1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

180

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2SA1576ART1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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