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.1 A Small Signal Bipolar Junction Transistors (BJT) 867

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BC846BPN-TP by Micro Commercial Components

BC846BPN-TP

Micro Commercial Components

BC846BPN-TP by Micro Commercial Components is a Small Signal BJT with NPN and PNP configuration. It has hFE of 200, VCE of 65V, and fT of 100MHz. Ideal for applications requiring small outline packages, such as amplifiers and signal processing circuits.

.1 A

65 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

YES

Matte Tin (Sn)

GULL WING

DUAL

10

SILICON

100 MHz

NSBA143EDP6T5G by Onsemi

NSBA143EDP6T5G

Onsemi

NSBA143EDP6T5G by Onsemi is a PNP BJT transistor with 2 elements, built-in resistor, and hFE of 15. It is used for switching applications with max collector-emitter voltage of 50V and max current of 0.1A. The package is small outline, surface mountable, with 6 terminals in a rectangular shape.

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

15

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.408 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

NSBC143EPDP6T5G by Onsemi

NSBC143EPDP6T5G

Onsemi

NSBC143EPDP6T5G by Onsemi is a Small Signal BJT with NPN and PNP types, 2 elements with built-in resistor. It has a max power dissipation of 0.408W, hFE of 15, and can handle up to 50V collector-emitter voltage. Ideal for switching applications in surface mount designs due to its compact rectangular package style.

BUILT IN BIAS RESISTOR RATIO 1.0

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

15

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.408 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

NSM21356DW6T1G by Onsemi

NSM21356DW6T1G

Onsemi

NSM21356DW6T1G by Onsemi is a Small Signal BJT with NPN and PNP polarity, 2 elements with built-in resistor. It has a hFE of 80, Vce of 50V, and Ic of 0.1A. Ideal for switching applications, it comes in a rectangular package with Gull Wing terminals for surface mount assembly.

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

Not Qualified

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

BC546B-AP by Micro Commercial Components

BC546B-AP

Micro Commercial Components

BC546B-AP by Micro Commercial Components is a NPN bipolar junction transistor (BJT) with a min DC current gain of 200. It is commonly used as an amplifier in various applications. With a max operating temperature of 150°C and a max collector-emitter voltage of 65V, it offers reliable performance.

.1 A

65 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

NO

Matte Tin (Sn)

THROUGH-HOLE

BOTTOM

10

AMPLIFIER

SILICON

300 MHz

DTC114EE-TP by Micro Commercial Components

DTC114EE-TP

Micro Commercial Components

DTC114EE-TP by Micro Commercial Components is a NPN BJT with built-in resistor for switching applications. It has a max power dissipation of 0.15W, hFE of 30, and fT of 250MHz. This surface mount transistor comes in a small outline package with matte tin finish and dual terminals.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

10

SWITCHING

SILICON

250 MHz

NSBC144WDP6T5G by Onsemi

NSBC144WDP6T5G

Onsemi

NSBC144WDP6T5G by Onsemi is a NPN BJT transistor with 2 elements and built-in resistor. It has a max power dissipation of 0.408W, hFE of 80, and max collector-emitter voltage of 50V. Ideal for switching applications, this small outline package with matte tin finish operates up to 150 °C.

BUILT IN BIAS RESISTOR RATIO IS 0.47

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.408 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

NSM11156DW6T1G by Onsemi

NSM11156DW6T1G

Onsemi

NSM11156DW6T1G by Onsemi is a PNP BJT transistor with 2 elements and built-in resistor, ideal for switching applications. It has a min hFE of 35, max VCE of 50V, and max IC of 0.1A. This surface-mount device in a small outline package is designed for high-speed operations in various electronic circuits.

BUILT IN BIAS RESISTOR RATIO IS 1.0

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

35

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

NSM46211DW6T1G by Onsemi

NSM46211DW6T1G

Onsemi

NSM46211DW6T1G by Onsemi is a NPN BJT transistor with 2 elements and built-in resistor. It has a hFE of 200, Vce of 65V, and Ic of 0.1A. Ideal for switching applications, this surface-mount device comes in a small outline package with Gull Wing terminals.

BUILT IN BIAS RESISTOR RATIO IS 1.0

.1 A

65 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

200

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

BC859BLT1 by Onsemi

BC859BLT1

Onsemi

BC859BLT1 by Onsemi is a PNP BJT with 3 terminals, max power dissipation of 0.3W, and hFE of 220. Ideal for small outline applications, it operates at up to 150 °C with a max collector-emitter voltage of 30V.

.1 A

30 V

SINGLE

220

TO-236AB

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

.3 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SILICON

100 MHz

BCX71JLT1 by Onsemi

BCX71JLT1

Onsemi

BCX71JLT1 by Onsemi is a PNP BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 0.1A. It has a small outline package style, Gull Wing terminal form, and operates up to 150°C. Ideal for low-power applications requiring fast switching times in surface mount designs.

.1 A

45 V

SINGLE

100

TO-236AB

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

.35 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SILICON

800 ns

150 ns

DTA115EET1 by Onsemi

DTA115EET1

Onsemi

DTA115EET1 by Onsemi is a PNP BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This surface-mount transistor comes in a small outline package with gull wing terminals.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

.3 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

DTC115EET1 by Onsemi

DTC115EET1

Onsemi

DTC115EET1 by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.1A, and DC current gain of 80. This surface-mount device comes in a small outline package with Gull Wing terminals, making it suitable for compact electronic designs.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.3 W

Not Qualified

BIP General Purpose Small Signals

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

DTC144TT1 by Onsemi

DTC144TT1

Onsemi

DTC144TT1 by Onsemi is a NPN BJT with built-in resistor for switching applications. It has a min hFE of 160, max VCE of 50V, and max IC of 0.1A. This surface-mount transistor in a small outline package is ideal for compact electronic designs.

BUILT IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

160

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.338 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

DTC144WET1 by Onsemi

DTC144WET1

Onsemi

DTC144WET1 by Onsemi is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This small outline transistor in gull wing package is ideal for surface mount designs.

BUILT-IN BIAS RESISTOR RATIO IS 2.1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.3 W

Not Qualified

BIP General Purpose Small Signals

YES

TIN LEAD

GULL WING

DUAL

30

SWITCHING

SILICON

UMA4NT1 by Onsemi

UMA4NT1

Onsemi

UMA4NT1 by Onsemi is a PNP BJT with 2 elements, built-in resistor, and common emitter configuration. It has a max collector-emitter voltage of 50V, max current of 0.1A, and min DC current gain of 160 (hFE). Ideal for switching applications in small outline packages with gull wing terminals.

BUILT IN BIAS RESISTOR

.1 A

50 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

160

R-PDSO-G5

e0

1

2

5

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SWITCHING

SILICON

UMC5NT1 by Onsemi

UMC5NT1

Onsemi

UMC5NT1 by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 elements in a cascaded configuration with built-in resistors, offering a min hFE of 80. With a max IC of 0.1A and VCE of 50V, this transistor is designed for surface mount in small outline packages.

BUILT IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR

80

R-PDSO-G5

e0

1

2

5

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

MUN5237T1 by Onsemi

MUN5237T1

Onsemi

MUN5237T1 by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 80. This small outline package with gull wing terminals is surface mountable for efficient assembly processes.

BUILT IN BIAS RESISTOR RATIO 0.47

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.31 W

Not Qualified

BIP General Purpose Small Signal

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SWITCHING

SILICON

BC847AT-7 by Diodes Incorporated

BC847AT-7

Diodes Incorporated

BC847AT-7 by Diodes Inc. is a NPN BJT transistor with 3 terminals, hFE of 110, and max IC of 0.1A. It operates up to 150°C, has VCE of 45V, and fT of 100MHz. Widely used in small signal applications due to its compact size and high transition frequency.

.1 A

45 V

SINGLE

110

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

100 MHz

BC847BT-7 by Diodes Incorporated

BC847BT-7

Diodes Incorporated

BC847BT-7 by Diodes Inc. is a NPN BJT transistor with max power dissipation of 0.15W and min DC current gain of 200. It operates at up to 150°C, has a max collector-emitter voltage of 45V, and is ideal for small signal applications in electronics due to its high transition frequency of 100MHz.

.1 A

45 V

SINGLE

200

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

100 MHz

BC857AT-7 by Diodes Incorporated

BC857AT-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

.1 A

45 V

SINGLE

125

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

100 MHz

BC857BT-7 by Diodes Incorporated

BC857BT-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

.1 A

45 V

SINGLE

220

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

100 MHz

2N5089TA by Fairchild Semiconductor

2N5089TA

Fairchild Semiconductor

2N5089TA by Fairchild Semiconductor is a NPN BJT transistor with a max power dissipation of 0.35W and min hFE of 450, ideal for amplifier applications. It has a max VCE of 25V, IC of 0.1A, and fT of 50MHz. The package is cylindrical with matte tin finish and through-hole terminals.

LOW NOISE

.1 A

25 V

SINGLE

450

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.35 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

50 MHz

BC548CBU by Fairchild Semiconductor

BC548CBU

Fairchild Semiconductor

BC548CBU by Fairchild Semiconductor is a NPN BJT transistor with a max collector-emitter voltage of 30V and max current of 0.1A. With a min DC current gain of 420, it's ideal for switching applications at up to 150°C operating temperature. The through-hole package style makes it easy to use in various electronic circuits.

.1 A

30 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

BC549CBU by Fairchild Semiconductor

BC549CBU

Fairchild Semiconductor

BC549CBU by Fairchild Semiconductor is a NPN BJT transistor with a min hFE of 420 and max IC of 0.1A. It is used for switching applications, has a max VCE of 30V, and operates up to 150°C. The package is cylindrical with through-hole terminals in matte tin finish.

LOW NOISE

.1 A

30 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

300 MHz

BC560CBU by Fairchild Semiconductor

BC560CBU

Fairchild Semiconductor

Fairchild Semiconductor's BC560CBU is a PNP BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 0.1A, ideal for switching applications. With a min. DC current gain of 420 and nominal transition frequency of 150MHz, it offers high performance in a cylindrical package suitable for through-hole mounting.

LOW NOISE

.1 A

45 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

150 MHz

2N5087BU by Fairchild Semiconductor

2N5087BU

Fairchild Semiconductor

2N5087BU by Fairchild Semiconductor is a PNP BJT with max. power dissipation of 0.35W, hFE of 250, and fT of 40MHz. Ideal for amplifier applications due to its single configuration and max. collector-emitter voltage of 50V.

LOW NOISE

.1 A

50 V

SINGLE

250

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.35 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

40 MHz

SS9015ABU by Fairchild Semiconductor

SS9015ABU

Fairchild Semiconductor

SS9015ABU by Fairchild Semiconductor is a PNP BJT transistor with 3 terminals. It has a max power dissipation of 0.45W, hFE of 60, and fT of 190MHz. Ideal for amplifier applications due to its max collector-emitter voltage of 45V and max collector current of 0.1A.

LOW NOISE

.1 A

45 V

SINGLE

60

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.45 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

190 MHz

DDTC114WUA-7 by Diodes Incorporated

DDTC114WUA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTANCE RATIO IS 0.47

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

24

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC143FUA-7 by Diodes Incorporated

DDTC143FUA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTANCE RATIO IS 4.68

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC143XUA-7 by Diodes Incorporated

DDTC143XUA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTANCE RATIO IS 2.13

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

10

SILICON

250 MHz

DDTC123EUA-7 by Diodes Incorporated

DDTC123EUA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC143EUA-7 by Diodes Incorporated

DDTC143EUA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC144EUA-7 by Diodes Incorporated

DDTC144EUA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA113ZCA-7 by Diodes Incorporated

DDTA113ZCA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 33;

BUILT-IN BIAS RESISTOR RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA113ZUA-7 by Diodes Incorporated

DDTA113ZUA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e0;

BUILT-IN BIAS RESISTOR RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA114GCA-7 by Diodes Incorporated

DDTA114GCA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA114TCA-7 by Diodes Incorporated

DDTA114TCA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 1;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA114TUA-7 by Diodes Incorporated

DDTA114TUA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 1;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA114WCA-7 by Diodes Incorporated

DDTA114WCA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;

BUILT-IN BIAS RESISTOR RATIO IS 0.47

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

24

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA123JCA-7 by Diodes Incorporated

DDTA123JCA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e0;

BUILT-IN BIAS RESISTOR RATIO IS 21.36

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA123TUA-7 by Diodes Incorporated

DDTA123TUA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Additional Features: BUILT-IN BIAS RESISTOR;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA123YUA-7 by Diodes Incorporated

DDTA123YUA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V;

BUILT-IN BIAS RESISTOR RATIO IS 4.54

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA124TCA-7 by Diodes Incorporated

DDTA124TCA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTA143XCA-7 by Diodes Incorporated

DDTA143XCA-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;

BUILT-IN BIAS RESISTOR RATIO IS 2.12

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC113TCA-7 by Diodes Incorporated

DDTC113TCA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e0;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC113ZCA-7 by Diodes Incorporated

DDTC113ZCA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;

BUILT-IN BIAS RESISTANCE RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

33

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

DDTC114GCA-7 by Diodes Incorporated

DDTC114GCA-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 30;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz