Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
NSVB114YPDXV6T1G
Onsemi
NSVB114YPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. It features 2 elements with built-in resistor, max VCE of 50V, and hFE of 80. This surface-mount transistor has a package style of small outline and complies with AEC-Q101 standards.
BUILT-IN BIAS RESISTOR RATIO 4.7
.1 A
50 V
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
80
R-PDSO-F6
2
6
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NPN AND PNP
.5 W
AEC-Q101
BIP General Purpose Small Signal
YES
FLAT
DUAL
SWITCHING
SILICON
DTA144EUAT106
ROHM
ROHM DTA144EUAT106 is a PNP BJT with VCEsat of 0.3V, hFE of 68, and IC of 0.1A. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals and can operate up to 150°C.
BUILT IN BIAS RESISTOR RATIO IS 1
SINGLE WITH BUILT-IN RESISTOR
68
R-PDSO-G3
1
3
150 Cel
260
PNP
.2 W
Not Qualified
GULL WING
10
250 MHz
.3 V
DTC114TUAT106
ROHM DTC114TUAT106 is a NPN BJT with VCEsat of 0.3V, hFE of 100, and IC of 0.1A. Ideal for switching applications due to its built-in resistor and small outline package style. Operates at up to 150°C with a max collector-emitter voltage of 50V.
BUILT-IN BIAS RESISTOR
100
NPN
DTC124XUAT106
ROHM DTC124XUAT106 is a NPN BJT with VCEsat of 0.3V, hFE of 68, and IC of 0.1A. Ideal for switching applications in small outline packages with built-in resistor. Operates at max temp of 150°C and transition frequency of 250MHz.
BUILT-IN BIAS RESISTOR RATIO IS 2.1
e1
TIN SILVER COPPER
DTC143EUA-T106
ROHM DTC143EUA-T106 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 30, and IC of 0.1A. Ideal for switching applications, it has a built-in resistor in a small outline package suitable for surface mount technology. Operating up to 150°C, it offers high performance in compact designs.
BUILT-IN BIAS RESISTOR RATIO IS 1
30
DTC114ESATP
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
R-PSIP-T3
IN-LINE
NOT SPECIFIED
.3 W
NO
THROUGH-HOLE
SINGLE
DTC143TSATP
ROHM DTC143TSATP is a NPN BJT transistor with VCEsat of 0.3V, hFE of 100, and IC of 0.1A. Ideal for switching applications with max operating temp of 150°C. Package style: IN-LINE, terminal form: THROUGH-HOLE, and terminal finish: TIN SILVER COPPER.
BC858BWT106
ROHM BC858BWT106 is a PNP BJT with 30V VCEO, 0.1A IC, and 210 hFE. Ideal for small signal applications in electronics due to its 250MHz fT, Gull Wing terminals, and compact Small Outline package. With a max operating temp of 150°C, it's suitable for various surface mount designs.
30 V
210
.35 W
Other Transistors
DTA113ZETL
ROHM DTA113ZETL is a PNP BJT transistor with VCEsat of 0.3V, hFE of 33, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and transition frequency of 250MHz. Its small outline package with gull wing terminals makes it suitable for surface mount designs.
BUILT-IN BIAS RESISTOR RATIO IS 10
33
.15 W
DTA114EUA-T106
ROHM's DTA114EUA-T106 is a PNP BJT with VCEsat of 0.3V, hFE of 68, and IC of 0.1A. Ideal for switching applications due to its built-in resistor and small outline package style. Operates at up to 150°C with a max collector-emitter voltage of 50V.
COLLECTOR
BIP General Purpose Small Signals
DTA123JUA-T106
ROHM's DTA123JUA-T106 is a PNP BJT transistor with VCEsat of 0.3V, hFE of 80, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and fT of 250MHz. With GULL WING terminals in a SMALL OUTLINE package, it offers efficient performance in compact designs.
BUILT-IN BIAS RESISTOR RATIO IS 21
DTC114GUAT106
ROHM DTC114GUAT106 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 30, and IC of 0.1A. Ideal for switching applications in small outline packages with built-in resistor. Operates at max temp of 150°C and transition frequency of 250MHz.
NSVMMUN2113LT3G
NSVMMUN2113LT3G by Onsemi is a PNP BJT transistor with VCEsat of 0.25V, hFE of 80, and IC of 0.1A. Ideal for switching applications in automotive electronics due to AEC-Q101 certification and built-in resistor configuration. Operating temperature range from -55 to 150 °C ensures reliable performance in various environments.
BUILT IN BIAS RESISTANCE RATIO IS 1
TO-236AB
e3
-55 Cel
.4 W
Matte Tin (Sn) - annealed
.25 V
EMD9FHAT2R
ROHM EMD9FHAT2R is a Small Signal BJT with NPN and PNP types. It has 2 elements with built-in resistor for switching applications. Features include hFE of 68, VCE of 50V, IC of 0.1A, fT of 250MHz. Suitable for surface mount in automotive electronics due to AEC-Q101 compliance.
BUILT IN BIAS RESISTANCE RATIO IS 4.7
UMD22NFHATR
ROHM UMD22NFHATR is a Small Signal BJT with NPN and PNP polarity, 2 elements with built-in resistor. It's ideal for switching applications, featuring 80 min hFE, 50V VCEO, and 250MHz fT. Package: SOT-363, surface mount Gull Wing terminals.
BUILT IN BIAS RESISTANCE RATIO IS 10
R-PDSO-G6
e2
TIN COPPER
BC847BTT1
BC847BTT1 by Onsemi is a NPN BJT transistor with 3 terminals, hFE of 200, and max. power dissipation of 0.15W. Ideal for amplifier applications, it operates at up to 150 °C, with Vce(max) of 45V.
45 V
200
e0
235
Tin/Lead (Sn/Pb)
AMPLIFIER
100 MHz
BC847CTT1
BC847CTT1 by Onsemi is a NPN BJT transistor with 3 terminals. It has a max power dissipation of 0.15W and min DC current gain of 420. Ideal for amplifier applications, it operates at up to 150°C with a max collector-emitter voltage of 45V.
420
TIN LEAD
BC857BTT1
BC857BTT1 by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 45V, max collector current of 0.1A, and transition frequency of 100MHz. This small outline package with Gull Wing terminals operates up to 150°C, making it suitable for various electronic designs.
220
.125 W
DTA114TMT2L
ROHM's DTA114TMT2L is a PNP BJT with built-in resistor for switching applications. Features include 100 min hFE, 50V VCEO, and 250MHz fT. Its small outline package and surface mount capability make it ideal for compact electronic designs.
R-PDSO-F3
DTC123EMT2L
ROHM's DTC123EMT2L is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and nominal transition frequency of 250MHz. Ideal for surface mount designs in small outline packages.
20
NSBC143TPDXV6T5G
NSBC143TPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP types, 2 elements with built-in resistor for switching applications. Features include max. collector-emitter voltage of 50V, min. DC current gain of 160 (hFE), and max. power dissipation of 0.5W in a small outline package suitable for surface mount technology.
BUILT IN BIAS RESISTOR
160
TIN
BCR183TE6327
Infineon Technologies
Infineon's BCR183TE6327 is a PNP BJT with max. power dissipation of 0.25W, min. DC current gain of 30, and max. collector current of 0.1A. Ideal for surface mount applications in electronics due to its silicon transistor element material and peak reflow temp of 260°C.
.25 W
EMF5XV6T5G
The Onsemi EMF5XV6T5G is a Small Signal BJT with NPN and PNP polarity, 2 elements with built-in resistor. It has a max collector-emitter voltage of 50V, 0.1A max collector current, and 0.5W power dissipation. Ideal for applications requiring compact design and high DC current gain (hFE) in electronic circuits.
BUILT IN BIAS RESISTOR RATIO 1
MATTE TIN
DCX4710H-7
Diodes Incorporated
PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;
35
DDC144NS-7
NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
NSBC114EPDXV6T5G
NSBC114EPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP types, ideal for switching applications. It features 2 elements with built-in resistor, max power dissipation of 0.5W, and can operate at up to 150 °C. Suitable for surface mount designs in various electronic circuits.
NSBC114YPDXV6T5G
NSBC114YPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP channels, 2 elements with built-in resistor. It has a max power dissipation of 0.5W, hFE of 80, and can handle up to 50V collector-emitter voltage. Ideal for switching applications in surface mount designs due to its compact rectangular package style.
BUILT IN BIAS RESISTOR RATIO IS 4.7
NSBC124EPDXV6T5G
NSBC124EPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP types, ideal for switching applications. It features 2 elements with built-in resistors, max power dissipation of 0.5W, and can operate b/w -55 to 150 °C. Suitable for surface mount designs in various electronic circuits.
60
NSBC144EPDXV6T5G
NSBC144EPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 elements with built-in resistors, a max power dissipation of 0.5W, and can operate at temperatures up to 150 °C. This transistor has a collector-emitter voltage of 50V and a collector current of 0.1A, making it suitable for various electronic circuits requiring low-power amplification or switching functions in compact designs.
DDTC113TLP-7
NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
BUILT-IN BIAS RESISTOR, HIGH RELIABILITY
R-PDSO-N3
e4
NICKEL PALLADIUM GOLD
NO LEAD
2N5089TFR
Fairchild Semiconductor
2N5089TFR by Fairchild Semiconductor is a NPN BJT with max. collector-emitter voltage of 25V, hFE of 450, and fT of 50MHz. Ideal for amplifier applications due to its single configuration and max. power dissipation of 0.35W in a cylindrical package with matte tin finish.
LOW NOISE
25 V
450
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
BOTTOM
50 MHz
2N5089TF
2N5089TF by Fairchild Semiconductor is a NPN bipolar junction transistor with a min DC current gain of 450 and max collector-emitter voltage of 25V. It is commonly used in amplifier applications due to its high transition frequency of 50MHz, making it suitable for small signal amplification tasks. The package style is cylindrical with a terminal finish of matte tin, providing durability and reliability for through-hole mounting configurations.
BC547BTAR
BC547BTAR by Fairchild Semiconductor is a NPN BJT transistor with 3 terminals. It has a max power dissipation of 0.625W and max collector-emitter voltage of 45V. Ideal for switching applications, it offers a min DC current gain of 200 and operates at temperatures up to 150°C.
.625 W
300 MHz
BC547BTFR
Fairchild Semiconductor's BC547BTFR is a NPN BJT transistor with 3 terminals. It has a max power dissipation of 0.625W and operates up to 150°C. Ideal for switching applications, it offers a min DC current gain of 200 and can handle a max collector-emitter voltage of 45V.
BC548CTAR
BC548CTAR by Fairchild Semiconductor is a NPN BJT transistor with hFE of 420. It has a max power dissipation of 0.625W and operates up to 150°C. Ideal for switching applications due to its max collector-emitter voltage of 30V and collector current of 0.1A.
BC549CTFR
BC549CTFR by Fairchild Semiconductor is a NPN BJT transistor with a max collector-emitter voltage of 30V and max current of 0.1A, ideal for switching applications. It has a min DC current gain of 420 and can handle up to 0.625W power dissipation. The package style is cylindrical with matte tin terminal finish, suitable for through-hole mounting.
2PB709AQW,115
NXP Semiconductors
PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel;
60 MHz
2PD601AQW,115
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;
PDTA114TEF,115
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR; Maximum Collector-Emitter Voltage: 50 V;
PDTA123EE,115
NXP Semiconductors' PDTA123EE,115 is a PNP BJT with 50V VCE, 0.1A IC, and 30 hFE. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals and built-in resistor. Operating up to 150°C, it's suitable for surface mount designs requiring compact components.
PDTA123JK,115
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY; Terminal Finish: TIN;
BUILT-IN BIAS RESISTOR RATIO IS 21.36
TO-236
PDTA123TE,115
NXP Semiconductors' PDTA123TE,115 is a PNP BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 30. The package is surface mountable with gull wing terminals in a small outline shape.
PDTA124TE,115
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3;
PDTA143EEF,115
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;
PDTA143TE,115
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;
PDTA143ZEF,115
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 10; JESD-30 Code: R-PDSO-G3;
PDTA144TE,115
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;
PDTA144VE,115
PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;
BUILT IN BIAS RESISTOR RATIO IS 0.21
40
© 2023 All rights reserved
