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.1 A Small Signal Bipolar Junction Transistors (BJT) 867

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
PDTA144WE,115 by NXP Semiconductors

PDTA144WE,115

NXP Semiconductors

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified;

BUILT-IN BIAS RESISTOR RATIO IS 0.47

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

60

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PDTC114TEF,115 by NXP Semiconductors

PDTC114TEF,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL; No. of Elements: 1;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

200

R-PDSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

FLAT

DUAL

SWITCHING

SILICON

PDTC114YEF,115 by NXP Semiconductors

PDTC114YEF,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel; Qualification: Not Qualified;

BUILT-IN BIAS RESISTOR RATIO IS 4.7

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

FLAT

DUAL

SWITCHING

SILICON

PDTC123EE,115 by NXP Semiconductors

PDTC123EE,115

NXP Semiconductors

PDTC123EE,115 by NXP Semiconductors is a NPN BJT transistor with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V and can handle a max collector current of 0.1A. This small outline transistor operates at temperatures up to 150°C, making it suitable for various electronic devices.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PDTC123EEF,115 by NXP Semiconductors

PDTC123EEF,115

NXP Semiconductors

NXP Semiconductors' PDTC123EEF,115 is a NPN BJT with built-in resistor for switching applications. Features include hFE of 30, VCE of 50V, and IC of 0.1A. Its small outline package makes it suitable for surface mount designs in various electronic circuits.

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

FLAT

DUAL

SWITCHING

SILICON

PDTC123YE,115 by NXP Semiconductors

PDTC123YE,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;

BUILT IN BIAS RESISTOR RATIO IS 4.5

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

35

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PDTC123YK,115 by NXP Semiconductors

PDTC123YK,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

BUILT IN BIAS RESISTOR RATIO IS 4.5

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

35

TO-236

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.25 W

Not Qualified

BIP General Purpose Small Signals

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

PDTC124TE,115 by NXP Semiconductors

PDTC124TE,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PDTC143EEF,115 by NXP Semiconductors

PDTC143EEF,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel; Package Shape: RECTANGULAR;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

FLAT

DUAL

SWITCHING

SILICON

PDTC143TE,115 by NXP Semiconductors

PDTC143TE,115

NXP Semiconductors

NXP Semiconductors' PDTC143TE,115 is a NPN BJT transistor with built-in resistor for switching applications. Features include 50V max collector-emitter voltage, 0.1A max collector current, and 200 min DC current gain. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

200

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signals

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PDTC143XEF,115 by NXP Semiconductors

PDTC143XEF,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;

BUILT-IN BIAS RESISTOR RATIO IS 2.1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

50

R-PDSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

FLAT

DUAL

SWITCHING

SILICON

PDTC143ZEF,115 by NXP Semiconductors

PDTC143ZEF,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL; No. of Elements: 1;

BUILT-IN BIAS RESISTOR RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

FLAT

DUAL

SWITCHING

SILICON

PDTC144TE,115 by NXP Semiconductors

PDTC144TE,115

NXP Semiconductors

The NXP Semiconductors PDTC144TE,115 is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.1A, and DC current gain of 100. This small outline transistor operates up to 150°C and is surface mountable with Gull Wing terminals.

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

100

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PDTC144WE,115 by NXP Semiconductors

PDTC144WE,115

NXP Semiconductors

NXP Semiconductors' PDTC144WE,115 is a NPN BJT with built-in resistor for switching applications. Features include 50V max collector-emitter voltage, 0.1A max collector current, and 150°C max operating temperature. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

BUILT-IN BIAS RESISTOR RATIO IS 0.47

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

60

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

PMD4001K,115 by NXP Semiconductors

PMD4001K,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Terminal Finish: TIN; JESD-609 Code: e3;

.1 A

40 V

SINGLE WITH BUILT-IN DIODE

24

TO-236AB

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

398 ns

17 ns

PMD5001K,115 by NXP Semiconductors

PMD5001K,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Terminal Position: DUAL;

.1 A

40 V

SINGLE

24

TO-236

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

DTC124EEBTL by ROHM

DTC124EEBTL

ROHM

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

56

R-PDSO-F3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN SILVER COPPER

FLAT

DUAL

10

SWITCHING

SILICON

250 MHz

BCR114TE6327 by Infineon Technologies

BCR114TE6327

Infineon Technologies

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 30; Transistor Element Material: SILICON;

.1 A

30

1

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR112TE6327 by Infineon Technologies

BCR112TE6327

Infineon Technologies

Infineon's BCR112TE6327 is a NPN BJT with 0.1A max collector current, 0.25W power dissipation, and hFE of 20. Ideal for surface mount applications in small signal circuits requiring SILICON transistor elements.

.1 A

20

1

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR192TE6327 by Infineon Technologies

BCR192TE6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 1;

.1 A

70

1

260

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR162TE6327 by Infineon Technologies

BCR162TE6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 1;

.1 A

20

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR142TE6327 by Infineon Technologies

BCR142TE6327

Infineon Technologies

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 70;

.1 A

70

1

NPN

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR153TE6327 by Infineon Technologies

BCR153TE6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 1;

.1 A

20

1

1

260

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

EMF21-7 by Diodes Incorporated

EMF21-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

30

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SILICON

250 MHz

UMG4N-7 by Diodes Incorporated

UMG4N-7

Diodes Incorporated

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A;

.1 A

50 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G5

e3

1

2

5

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

BC847BLP4-7 by Diodes Incorporated

BC847BLP4-7

Diodes Incorporated

Diodes Incorporated's BC847BLP4-7 is a NPN BJT with 200 min hFE, 45V VCEO, and 100MHz fT. Ideal for small signal applications in electronics due to its 0.25W power dissipation, 0.1A IC, and compact chip carrier package.

COLLECTOR

.1 A

45 V

SINGLE

200

R-PBCC-N3

e4

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

NPN

.25 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SILICON

100 MHz

2DA1774QLP-7 by Diodes Incorporated

2DA1774QLP-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;

HIGH RELIABILITY

COLLECTOR

.1 A

40 V

SINGLE

120

R-PBCC-N3

e4

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

PNP

.25 W

Not Qualified

Other Transistors

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

BOTTOM

30

SILICON

100 MHz

DCX115EK-7-F by Diodes Incorporated

DCX115EK-7-F

Diodes Incorporated

DCX115EK-7-F by Diodes Inc. is a Small Signal BJT with NPN/PNP polarity, 2 elements, and built-in resistor. It has 6 terminals, max power dissipation of 0.3W, and operates up to 150°C. Ideal for applications requiring high transition frequency at 250MHz in a compact small outline package.

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

82

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.3 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

2PB709AQ,115 by NXP Semiconductors

2PB709AQ,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel;

.1 A

5 pF

45 V

SINGLE

160

TO-236

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

60 MHz

.5 V

2PB709AR,115 by NXP Semiconductors

2PB709AR,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

5 pF

45 V

SINGLE

210

TO-236

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

70 MHz

.5 V

2PB709AS,115 by NXP Semiconductors

2PB709AS,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

5 pF

45 V

SINGLE

290

TO-236

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

80 MHz

.5 V

BC546B,116 by NXP Semiconductors

BC546B,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

65 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.6 V

BC546B,126 by NXP Semiconductors

BC546B,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

65 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

250

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

40

SWITCHING

SILICON

100 MHz

.6 V

BC547,116 by NXP Semiconductors

BC547,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

45 V

SINGLE

110

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.6 V

BC547B,112 by NXP Semiconductors

BC547B,112

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

45 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

BOTTOM

40

SWITCHING

SILICON

100 MHz

.6 V

BC547B,116 by NXP Semiconductors

BC547B,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

45 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.6 V

BC547C,112 by NXP Semiconductors

BC547C,112

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;

.1 A

45 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.5 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.6 V

BC547C,116 by NXP Semiconductors

BC547C,116

NXP Semiconductors

NXP Semiconductors' BC547C,116 is a NPN BJT transistor with max VCEsat of 0.6V and hFE of 420. Ideal for switching applications, it has a max IC of 0.1A and operates up to 150°C. Its package style is cylindrical with matte tin finish in a through-hole terminal form.

.1 A

45 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.6 V

BC547C,126 by NXP Semiconductors

BC547C,126

NXP Semiconductors

BC547C,126 by NXP Semiconductors is a NPN BJT transistor with max VCEsat of 0.6V and hFE of 420. Ideal for switching applications, it has a max IC of 0.1A and operates up to 150°C. Its package style is cylindrical with matte tin finish in through-hole terminal form.

.1 A

45 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.6 V

BC549C,112 by NXP Semiconductors

BC549C,112

NXP Semiconductors

BC549C,112 by NXP Semiconductors is a NPN BJT transistor with max VCEsat of 0.6V and hFE of 420. Ideal for amplifier applications, it has a max IC of 0.1A and operates up to 150°C. Its package is cylindrical with through-hole terminals.

LOW NOISE

.1 A

30 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.5 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

100 MHz

.6 V

BC550C,112 by NXP Semiconductors

BC550C,112

NXP Semiconductors

NXP Semiconductors' BC550C,112 is a NPN BJT transistor with max VCEsat of 0.6V and hFE of 420. Ideal for amplifier applications, it has a max IC of 0.1A and operates up to 150°C. With a cylindrical package style, it features matte tin terminal finish in a through-hole configuration.

LOW NOISE

.1 A

45 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

100 MHz

.6 V

BC550C,116 by NXP Semiconductors

BC550C,116

NXP Semiconductors

NXP Semiconductors' BC550C,116 is a NPN BJT transistor with max VCEsat of 0.6V and hFE of 420. Ideal for amplifier applications, it has a max IC of 0.1A and operates up to 150°C. The package is cylindrical with matte tin finish and through-hole terminals.

LOW NOISE

.1 A

45 V

SINGLE

420

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

100 MHz

.6 V

BC556A,112 by NXP Semiconductors

BC556A,112

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;

.1 A

65 V

SINGLE

125

TO-92

O-PBCY-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.5 W

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.65 V

BC556B,112 by NXP Semiconductors

BC556B,112

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

65 V

SINGLE

220

TO-92

O-PBCY-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.65 V

BC556B,116 by NXP Semiconductors

BC556B,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

65 V

SINGLE

200

TO-92

O-PBCY-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

250

PNP

.625 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

BOTTOM

40

SWITCHING

SILICON

100 MHz

.65 V

BC557,112 by NXP Semiconductors

BC557,112

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

45 V

SINGLE

125

TO-92

O-PBCY-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.625 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

BOTTOM

40

SWITCHING

SILICON

100 MHz

.65 V

BC557,116 by NXP Semiconductors

BC557,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;

.1 A

45 V

SINGLE

125

TO-92

O-PBCY-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.625 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

100 MHz

.65 V

BC557B,112 by NXP Semiconductors

BC557B,112

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;

.1 A

45 V

SINGLE

220

TO-92

O-PBCY-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

250

PNP

.5 W

Not Qualified

Other Transistors

NO

Tin (Sn)

THROUGH-HOLE

BOTTOM

40

SWITCHING

SILICON

100 MHz

.65 V