Loading...

BC847BLP4-7

Diodes Incorporated

BC847BLP4-7 by Diodes Incorporated

Diodes Incorporated's BC847BLP4-7 is a NPN BJT with 200 min hFE, 45V VCEO, and 100MHz fT. Ideal for small signal applications in electronics due to its 0.25W power dissipation, 0.1A IC, and compact chip carrier package.

Median Price

$0.102

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 200 parts In-Stock

1+ parts

$0.102

100+ parts

-

1k+ parts

-

10k+ parts

-

200

$0.102

-

-

-

Vyrian

USA . 7,786 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,786

-

-

-

-

VNN

France . 3,435 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,435

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 1,692 parts In-Stock

1+ parts

$0.102

100+ parts

-

1k+ parts

-

10k+ parts

$0.099

1,692

$0.102

-

-

$0.099

Continental Prestige Electronics

USA . 1,222 parts In-Stock

1+ parts

$0.102

100+ parts

-

1k+ parts

-

10k+ parts

$0.100

1,222

$0.102

-

-

$0.100

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.102

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$0.102

-

-

-

Aztec Data Supply Inc.

USA . 4,037 parts In-Stock

1+ parts

$0.590

100+ parts

-

1k+ parts

-

10k+ parts

-

4,037

$0.590

-

-

-

Corohmni

South Africa . 5 parts In-Stock

1+ parts

$1.961

100+ parts

-

1k+ parts

-

10k+ parts

-

5

$1.961

-

-

-

Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$2.183

100+ parts

$1.987

1k+ parts

$1.790

10k+ parts

-

500

$2.183

$1.987

$1.790

-

AZTECH Wire

Italy . 659 parts In-Stock

1+ parts

$8.726

100+ parts

-

1k+ parts

-

10k+ parts

-

659

$8.726

-

-

-

Semicontronic

India . 732 parts In-Stock

1+ parts

$35.050

100+ parts

$34.174

1k+ parts

$33.998

10k+ parts

-

732

$35.050

$34.174

$33.998

-

Ampacity Inc.

Singapore . 153 parts In-Stock

1+ parts

$53.050

100+ parts

-

1k+ parts

-

10k+ parts

-

153

$53.050

-

-

-

Perfect Parts

USA . 24,004 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

24,004

-

-

-

-

Lixinc

USA . 16,772 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

16,772

-

-

-

-

Assy Fe

Spain . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Overview

Unlock the potential of your electronic projects with the BC847BLP4-7 by Diodes Incorporated. This high-quality Small Signal Bipolar Junction Transistor (BJT) offers reliable performance and versatility for a wide range of applications. Manufactured by the trusted brand, Diodes Incorporated, this NPN transistor boasts a maximum power dissipation of 0.25 W and a minimum DC current gain of 200. With its compact chip carrier package and nickel palladium gold terminal finish, the BC847BLP4-7 ensures easy integration and long-lasting durability. Upgrade your designs with this top-of-the-line transistor and experience enhanced efficiency and performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for different electronic projects.

Configuration: SINGLE

The single configuration simplifies the circuit design and allows for easy integration into electronic systems.

Surface Mount: YES

The surface mount capability enables easy and efficient installation on PCBs, saving time and effort during assembly.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of space on the PCB, making it ideal for compact electronic devices.

Terminal Form: NO LEAD

The no-lead terminal form minimizes the risk of damage during handling and installation, ensuring reliable performance.

No. of Terminals: 3

With three terminals, this transistor can be easily connected in a circuit, offering flexibility in design.

Maximum Power Dissipation (Abs): 0.25 W

This high power dissipation capability allows the transistor to handle larger loads and operate efficiently.

Package Style (Meter): CHIP CARRIER

The chip carrier package style provides a compact and lightweight design, making it suitable for portable electronic devices.

Minimum DC Current Gain (hFE): 200

The high minimum DC current gain ensures stable and consistent amplification performance in various circuit configurations.

Maximum Operating Temperature: 150 °C

The wide operating temperature range makes this transistor suitable for use in challenging environmental conditions.

Maximum Collector-Emitter Voltage: 45 V

The high collector-emitter voltage rating allows for safe operation in applications with higher voltage requirements.

Transistor Element Material: SILICON

Silicon transistors offer high efficiency and reliability, making this product a durable choice for electronic projects.

Maximum Collector Current (IC): 0.1 A

The high maximum collector current rating enables the transistor to handle larger current loads without overheating.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold terminal finish provides excellent conductivity and corrosion resistance for reliable performance.

Terminal Position: BOTTOM

The bottom terminal position simplifies the installation process and ensures a secure connection in the circuit.

Case Connection: COLLECTOR

The collector case connection design allows for easy integration into circuits and ensures efficient heat dissipation.

Maximum Time At Peak Reflow Temperature (s): 30

This short peak reflow time minimizes the risk of thermal damage during soldering, ensuring product reliability.

Peak Reflow Temperature °C: 260

The high peak reflow temperature rating allows for efficient and reliable soldering during assembly.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency enables fast switching and amplification, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC847BLP4-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PBCC-N3

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC847BLP4-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20