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PDTC144TE,115

NXP Semiconductors

PDTC144TE,115 by NXP Semiconductors

The NXP Semiconductors PDTC144TE,115 is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, collector current of 0.1A, and DC current gain of 100. This small outline transistor operates up to 150°C and is surface mountable with Gull Wing terminals.

Median Price

$0.096

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 978,866 parts In-Stock

1+ parts

-

100+ parts

$0.099

1k+ parts

$0.083

10k+ parts

$0.074

978,866

-

$0.099

$0.083

$0.074

Verical

USA . 966,666 parts In-Stock

1+ parts

-

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$0.092

966,666

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$0.092

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Digiode

USA . 2,176 parts In-Stock

1+ parts

$0.041

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2,176

$0.041

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Vyrian

USA . 5,080 parts In-Stock

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5,080

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Anansix

USA . 175 parts In-Stock

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175

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Corphita

USA . 4,285 parts In-Stock

1+ parts

$0.039

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4,285

$0.039

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AZTECH Wire

Italy . 1,148 parts In-Stock

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$10.170

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1,148

$10.170

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Continental Prestige Electronics

USA . 978,866 parts In-Stock

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$0.052

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978,866

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$0.052

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Perfect Parts

USA . 358,151 parts In-Stock

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GreenTree Electronics

Israel . 318,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 5,537 parts In-Stock

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5,537

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Kepictronics

USA . 3,000 parts In-Stock

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UNI Independent Distributors

Spain . 528 parts In-Stock

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528

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Overview

Looking for a reliable and high-quality Small Signal BJT? Look no further than the PDTC144TE,115 by NXP Semiconductors. With a single configuration and built-in resistor, this NPN transistor is perfect for switching applications. Its small outline package makes it easy to mount, while its high DC current gain ensures optimal performance. Trust in NXP Semiconductors' reputation for excellence and choose the PDTC144TE,115 for all your electronic needs. Experience the value and benefits of superior quality with this top-of-the-line transistor.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good mechanical strength and protection for the transistor, making it durable and long-lasting.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile for a variety of applications.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB, making it easier to integrate into electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in those scenarios.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Package Shape: RECTANGULAR

The rectangular shape occupies less space on the PCB, making it suitable for compact electronic devices.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical support and good solder connections, enhancing reliability in operation.

Maximum Power Dissipation (Abs): 0.15 W

With a high maximum power dissipation, this transistor can handle higher power levels without overheating.

Minimum DC Current Gain (hFE): 100

A high DC current gain ensures amplification of the input signal with high efficiency, making it a reliable choice for amplification circuits.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures without degradation, ensuring stability and longevity in challenging environments.

Maximum Collector-Emitter Voltage: 50 V

Suitable for applications requiring higher voltage handling capabilities, providing flexibility in circuit design.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and consistency, making them a preferred choice for various electronic applications.

Maximum Collector Current (IC): 0.1 A

Capable of handling higher collector currents, making it suitable for applications requiring higher current levels.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and solderability, ensuring a reliable electrical connection.

Terminal Position: DUAL

Dual terminal positioning allows for flexible PCB layout and easy integration into various circuit configurations.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for a significant duration, ensuring proper soldering and reliability during assembly.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C ensures proper soldering and mechanical stability during assembly process.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTC144TE,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT-IN BIAS RESISTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PDTC144TE,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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