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PDTC123JT,215

NXP Semiconductors

PDTC123JT,215 by NXP Semiconductors

NXP Semiconductors' PDTC123JT,215 is a NPN BJT with VCEsat of 0.3V and hFE of 100. Ideal for switching applications, it has a max IC of 0.1A and operates up to 150°C. The transistor's package is small outline with GULL WING terminals in a RECTANGULAR shape.

Median Price

$0.027

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 94 parts In-Stock

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$0.209

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$0.083

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$0.083

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Arrow

USA . 1,543,810 parts In-Stock

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TTI

USA . 729,000 parts In-Stock

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$0.013

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Verical

USA . 552,000 parts In-Stock

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Rochester

USA . 41,720 parts In-Stock

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$0.027

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41,720

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$0.020

Element14

Singapore . 21,671 parts In-Stock

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$0.054

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$0.034

Future Electronics

Canada . 15,000 parts In-Stock

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$0.053

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Farnell

UK . 11,740 parts In-Stock

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$0.025

Chip1Stop

Japan . 10,071 parts In-Stock

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EBV Elektronik

Germany . 9,000 parts In-Stock

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Digiode

USA . 3,151 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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TME

Poland . 10,618 parts In-Stock

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$0.090

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$0.042

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$0.023

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$0.021

10,618

$0.090

$0.042

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$0.021

Maritex

Poland . 12,000 parts In-Stock

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$0.103

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$0.103

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$0.025

IBS Electronics

USA . 2,205,000 parts In-Stock

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NAC Semi

USA . 1,662,000 parts In-Stock

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Chip Stock

USA . 54,000 parts In-Stock

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Bristol Electronics

USA . 8,114 parts In-Stock

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Dan-Mar Components

USA . 8,114 parts In-Stock

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Vyrian

USA . 3,811 parts In-Stock

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Anansix

USA . 2,208 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 483,896 parts In-Stock

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$0.010

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Ampacity Inc.

Singapore . 269,431 parts In-Stock

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Corphita

USA . 3,032 parts In-Stock

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Advanced Electronics

New Zealand . 700 parts In-Stock

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700

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AZTECH Wire

Italy . 4,330 parts In-Stock

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Argo Parts USA

USA . 3,317 parts In-Stock

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Modulus Dynamics

Lithuania . 22,807 parts In-Stock

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Aztec Data Supply Inc.

USA . 95 parts In-Stock

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$1.590

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Infinite Electronics LLP (Excess)

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Eastek

USA . 1,491,000 parts In-Stock

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Perfect Parts

USA . 1,225,297 parts In-Stock

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Formix International (Excess)

India . 300,000 parts In-Stock

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Lixinc

USA . 15,723 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 13,877 parts In-Stock

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Continental Prestige Electronics

USA . 10,766 parts In-Stock

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GreenTree Electronics

Israel . 6,000 parts In-Stock

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Futuretech Components

Singapore . 5,980 parts In-Stock

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UNI Independent Distributors

Spain . 1,607 parts In-Stock

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Supply Digital

USA . 1,274 parts In-Stock

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Corohmni

South Africa . 283 parts In-Stock

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Overview

Discover the power of the PDTC123JT,215 by NXP Semiconductors, a top-quality Small Signal BJT that offers exceptional performance in switching applications. With a built-in resistor and NPN configuration, this transistor provides seamless operation and reliability. Its compact design and efficient power dissipation make it ideal for a wide range of electronic projects. Trust NXP Semiconductors for cutting-edge technology that delivers value and precision. Elevate your projects with the PDTC123JT,215 and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for various applications.

Polarity or Channel Type: NPN

Commonly used for amplification and switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance.

Maximum VCEsat: 0.3 V

Low saturation voltage results in efficient switching and reduced power loss.

Minimum DC Current Gain (hFE): 100

High current gain ensures reliable amplification and switching capabilities.

Maximum Collector-Emitter Voltage: 50 V

Suitable for low to medium voltage applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTC123JT,215 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 21.36

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.25 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.3 V

Trade Compliance

PDTC123JT,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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