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PDTC143ET,215

NXP Semiconductors

PDTC143ET,215 by NXP Semiconductors

NXP Semiconductors' PDTC143ET,215 is a NPN BJT with VCEsat of 0.3V and hFE of 30. Ideal for switching applications, it has a max IC of 0.1A and operates up to 150°C. The small outline package features Gull Wing terminals and built-in resistor for easy surface mount installation.

Median Price

$0.027

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Netroflash

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Overview

Upgrade your electronics with the PDTC143ET,215 by NXP Semiconductors. This Small Signal Bipolar Junction Transistor (BJT) offers reliable performance in a compact package, perfect for switching applications. With a low VCEsat of 0.3V and a maximum operating temperature of 150°C, this NPN transistor provides efficient power dissipation and enhanced durability. Trust in NXP Semiconductors' reputation for quality and innovation to deliver top-notch components for your projects. Explore the possibilities with the PDTC143ET,215 and experience the difference in performance and reliability it can bring to your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material offers good insulation and durability, making the transistor suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in switching circuits, making this transistor versatile and widely applicable.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space, making this transistor a convenient choice for various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient performance in such circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, making this transistor suitable for automated production processes.

Maximum VCEsat: 0.3 V

Low VCEsat value indicates minimal voltage drop across the collector-emitter junction, leading to high efficiency in switching applications.

Package Shape: RECTANGULAR

Rectangular shape provides easy mounting and space-saving benefits, making the transistor suitable for compact electronic devices.

Terminal Form: GULL WING

Gull wing terminals offer secure soldering connections, ensuring reliable operation in various environmental conditions.

No. of Terminals: 3

Three terminals allow for easy connectivity in circuit designs, providing flexibility in configuration and layout.

Maximum Power Dissipation (Abs): 0.25 W

With a high power dissipation value, this transistor can handle moderate power levels without overheating, ensuring long-term reliability.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and provides efficient heat dissipation, making it ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 30

High DC current gain ensures amplification of input signals, making this transistor suitable for low-power amplification applications.

Maximum Operating Temperature: 150 °C

With a high operating temperature range, this transistor can withstand elevated temperatures without degradation, ensuring reliable performance in various environments.

Maximum Collector-Base Capacitance: 3.5 pF

Low collector-base capacitance minimizes signal distortion and improves high-frequency performance, making this transistor suitable for high-speed applications.

Maximum Collector-Emitter Voltage: 50 V

High collector-emitter voltage rating allows for safe operation in circuits with higher voltage levels, increasing the versatility of this transistor.

Transistor Element Material: SILICON

Silicon material offers high temperature stability and performance reliability, making this transistor suitable for a wide range of operating conditions.

Maximum Collector Current (IC): 0.1 A

With a moderate collector current rating, this transistor can handle low to moderate current levels in various circuit applications.

Terminal Finish: TIN

Tin terminal finish offers good solderability and corrosion resistance, ensuring long-term reliability in various environmental conditions.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit connectivity and layout, allowing for easy integration into various circuit designs.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time at peak temperature ensures reliable solder joints and prevents component damage during assembly, ensuring high-quality manufacturing.

Peak Reflow Temperature °C: 260

High reflow temperature capability allows for efficient soldering processes and ensures component integrity during manufacturing, leading to reliable end products.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTC143ET,215 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

.3 V

Trade Compliance

PDTC143ET,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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