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PDTC114ET,235

NXP Semiconductors

PDTC114ET,235 by NXP Semiconductors

NXP Semiconductors' PDTC114ET,235 is a NPN BJT transistor with VCEsat of 0.3V and hFE of 30. Ideal for switching applications, it has a max IC of 0.1A and operates up to 150°C. With a compact Gull Wing package style, it offers high transition frequency at 100MHz.

Median Price

$0.016

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 20 parts In-Stock

1+ parts

$0.120

100+ parts

$0.046

1k+ parts

$0.029

10k+ parts

$0.019

20

$0.120

$0.046

$0.029

$0.019

Mouser Electronics

USA . 5,944 parts In-Stock

1+ parts

$0.150

100+ parts

$0.058

1k+ parts

$0.034

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$0.021

5,944

$0.150

$0.058

$0.034

$0.021

Future Electronics

Canada . 480,000 parts In-Stock

1+ parts

-

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$0.010

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$0.010

TTI

USA . 230,000 parts In-Stock

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$0.014

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$0.014

RS (Exports)

UK . 120,000 parts In-Stock

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$0.025

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$0.025

Arrow

USA . 70,000 parts In-Stock

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$0.014

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$0.014

Verical

USA . 70,000 parts In-Stock

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$0.017

70,000

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$0.017

Chip1Stop

Japan . 9,250 parts In-Stock

1+ parts

-

100+ parts

$0.013

1k+ parts

$0.009

10k+ parts

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9,250

-

$0.013

$0.009

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,640 parts In-Stock

1+ parts

$0.017

100+ parts

-

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2,640

$0.017

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Nova Conductors

Japan . 300 parts In-Stock

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$0.030

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300

$0.030

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Chip Stock

USA . 179,000 parts In-Stock

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NAC Semi

USA . 170,000 parts In-Stock

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$0.018

170,000

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$0.018

PC Components Company LLC

USA . 139,000 parts In-Stock

1+ parts

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139,000

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Bristol Electronics

USA . 139,000 parts In-Stock

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139,000

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IBS Electronics

USA . 60,000 parts In-Stock

1+ parts

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$0.013

60,000

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$0.013

Vyrian

USA . 6,707 parts In-Stock

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6,707

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Anansix

USA . 1,740 parts In-Stock

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1,740

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LIBRA Elektronik GmbH

Germany . 773 parts In-Stock

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773

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Distributors (Availability)

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Ampacity Inc.

Singapore . 186,874 parts In-Stock

1+ parts

$0.008

100+ parts

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186,874

$0.008

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Semicontronic

India . 125,553 parts In-Stock

1+ parts

$0.009

100+ parts

$0.009

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$0.009

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125,553

$0.009

$0.009

$0.009

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AZTECH Wire

Italy . 11,305 parts In-Stock

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$0.010

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11,305

$0.010

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Corphita

USA . 4,533 parts In-Stock

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$0.016

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4,533

$0.016

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Continental Prestige Electronics

USA . 5,442 parts In-Stock

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$0.030

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5,442

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Argo Parts USA

USA . 1,239 parts In-Stock

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$0.030

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1,239

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Corohmni

South Africa . 81 parts In-Stock

1+ parts

$0.409

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81

$0.409

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Aztec Data Supply Inc.

USA . 2,368 parts In-Stock

1+ parts

$1.150

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2,368

$1.150

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$1.774

100+ parts

$1.614

1k+ parts

$1.455

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3,000

$1.774

$1.614

$1.455

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GreenTree Electronics

Israel . 70,000 parts In-Stock

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Eastek

USA . 60,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 27,533 parts In-Stock

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Supply Digital

USA . 2,252 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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$0.029

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$0.028

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$0.028

500

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$0.029

$0.028

$0.028

UNI Independent Distributors

Spain . 471 parts In-Stock

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471

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Robosynatics

Brazil . 200 parts In-Stock

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200

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Lucentia Tech

USA . 200 parts In-Stock

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200

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Overview

Elevate your electronics projects with the PDTC114ET,235 by NXP Semiconductors, a top-tier manufacturer of high-quality components. This Small Signal Bipolar Junction Transistor (BJT) is designed for switching applications, boasting a low VCEsat of 0.3V and a minimum DC current gain of 30. With its built-in resistor and Gull Wing terminals, this NPN transistor offers ease of use and precise performance. Whether you're a seasoned engineer or a hobbyist, this product provides unmatched value and reliability. Upgrade your designs today with the PDTC114ET,235 and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and protection for the transistor.

Polarity or Channel Type:

NPN - Allows for current to flow from the collector to the emitter.

Configuration:

SINGLE WITH BUILT-IN RESISTOR - Simplifies circuit design and saves space on the PCB.

Transistor Application:

SWITCHING - Ideal for applications where rapid switching is required.

Surface Mount:

YES - Easy to assemble and saves time during manufacturing.

Maximum VCEsat:

0.3 V - Low saturation voltage helps reduce power dissipation and improves efficiency.

Package Shape:

RECTANGULAR - Convenient shape for mounting on a circuit board.

Terminal Form:

GULL WING - Provides a secure connection for soldering.

No. of Terminals:

3 - Simplifies circuit connections and reduces complexity.

Maximum Power Dissipation (Abs):

0.25 W - Handles power efficiently without overheating.

Package Style (Meter):

SMALL OUTLINE - Compact design saves space in electronic devices.

Minimum DC Current Gain (hFE):

30 - Ensures stable and reliable amplification of current.

Maximum Operating Temperature:

150 °C - Allows the transistor to operate in a wide range of environments.

Maximum Collector-Base Capacitance:

3.5 pF - Helps reduce signal distortion and improve performance.

Maximum Collector-Emitter Voltage:

50 V - Handles high voltage applications safely.

Transistor Element Material:

SILICON - Provides excellent electrical performance and reliability.

Maximum Collector Current (IC):

0.1 A - Supports various current loads effectively.

Terminal Finish:

TIN - Offers good conductivity and corrosion resistance.

Terminal Position:

DUAL - Provides flexibility for different mounting configurations.

Maximum Time At Peak Reflow Temperature (s):

30 - Ensures proper soldering during manufacturing processes.

Peak Reflow Temperature °C:

260 - Withstands high-temperature soldering without damage.

Nominal Transition Frequency (fT):

100 MHz - Allows for high-frequency signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTC114ET,235 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

PDTC114ET,235 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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