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PDTC114ET-QVL

Nexperia

PDTC114ET-QVL by Nexperia

Nexperia's PDTC114ET-QVL is a NPN BJT with built-in resistor for switching applications. Features include VCEsat of 0.1V, hFE of 30, and fT of 230MHz. With max ratings at 50V, 0.1A, and 150°C, it's ideal for small outline SMT designs in automotive electronics meeting AEC-Q101 standards.

Median Price

$0.022

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 633 parts In-Stock

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$0.160

100+ parts

$0.064

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$0.033

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$0.022

633

$0.160

$0.064

$0.033

$0.022

TTI

USA . 1,070,000 parts In-Stock

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Rochester

USA . 70,000 parts In-Stock

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$0.027

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$0.022

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Verical

USA . 70,000 parts In-Stock

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Future Electronics

Canada . 40,000 parts In-Stock

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Nova Conductors

Japan . 450 parts In-Stock

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$0.041

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Chip Stock

USA . 133,000 parts In-Stock

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Vyrian

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Ampacity Inc.

Singapore . 90,834 parts In-Stock

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$0.014

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$0.014

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Semicontronic

India . 79,394 parts In-Stock

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$0.014

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AZTECH Wire

Italy . 2,637 parts In-Stock

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$0.030

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Continental Prestige Electronics

USA . 6,172 parts In-Stock

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$0.041

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Argo Parts USA

USA . 4,701 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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$0.041

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Aztec Data Supply Inc.

USA . 3,154 parts In-Stock

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Corohmni

South Africa . 948 parts In-Stock

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

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$1.882

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$1.788

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Eastek

USA . 830,000 parts In-Stock

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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Authorized Procurement Solutions

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QUARKTWIN TECHNOLOGY LTD

USA . 8,597 parts In-Stock

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Supply Digital

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Robosynatics

Brazil . 350 parts In-Stock

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Lucentia Tech

USA . 350 parts In-Stock

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Overview

Unlock the power of innovative technology with the Nexperia PDTC114ET-QVL Small Signal Bipolar Junction Transistor. Manufactured with precision and expertise by Nexperia, this NPN transistor is designed for high-performance switching applications. With a built-in resistor and low VCEsat, this component offers unrivaled efficiency and reliability. Whether you're in the automotive, industrial, or consumer electronics industry, the PDTC114ET-QVL delivers exceptional performance and value, making it the ideal choice for your next project. Elevate your designs with Nexperia's cutting-edge technology and experience the difference firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection and insulation for the transistor, ensuring reliable performance and durability.

Polarity or Channel Type: NPN

Commonly used for amplification and switching applications, making it versatile for different circuit designs.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by already including a resistor, saving space and reducing component count.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing fast response times and efficient operation.

Surface Mount: YES

Easily mountable on circuit boards, saving space and making it ideal for compact electronic devices.

Maximum VCEsat: 0.1 V

Low VCE saturation voltage leads to reduced power loss and improved efficiency.

Package Shape: RECTANGULAR

Compact shape fits well in modern electronic designs and allows for efficient board layout.

Terminal Form: GULL WING

Allows for easy soldering and reliable connection to the circuit board.

No. of Terminals: 3

Simple connection setup with limited terminals, reducing chances of wiring errors.

Maximum Power Dissipation (Abs): 0.25 W

Can handle moderate power levels, suitable for various applications without overheating.

Package Style (Meter): SMALL OUTLINE

Space-efficient design for compact electronic devices and PCB layouts.

Minimum DC Current Gain (hFE): 30

Consistent and reliable amplification capabilities with a minimum DC current gain of 30.

Maximum Operating Temperature: 150 °C

Wide operating temperature range for reliable performance in different environmental conditions.

Maximum Collector-Base Capacitance: 2.5 pF

Low capacitance helps in high-speed switching applications and reduces signal distortion.

Maximum Collector-Emitter Voltage: 50 V

Able to handle up to 50 volts, suitable for various low-voltage applications.

Transistor Element Material: SILICON

Silicon material ensures good thermal stability and electrical performance of the transistor.

Minimum Operating Temperature: -65 °C

Wide temperature range allows for reliable operation even in cold environments.

Maximum Collector Current (IC): 0.1 A

Able to handle currents up to 0.1 ampere, suitable for low to medium current applications.

Terminal Position: DUAL

Facilitates easy connection and mounting on the PCB, providing a secure and stable electrical connection.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards ensures quality, reliability, and compatibility in various applications.

Nominal Transition Frequency (fT): 230 MHz

High transition frequency enables high-speed switching and amplification, suitable for fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PDTC114ET-QVL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

2.5 pF

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.1 V

Trade Compliance

PDTC114ET-QVL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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