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.1 A Small Signal Bipolar Junction Transistors (BJT) 867

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DCX114YUQ-13-F by Diodes Incorporated

DCX114YUQ-13-F

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 4.7

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

AEC-Q101; IATF 16949; MIL-STD-202

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

.3 V

DCX114YUQ-13R-F by Diodes Incorporated

DCX114YUQ-13R-F

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 4.7

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

AEC-Q101; IATF 16949; MIL-STD-202

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

.3 V

DCX124EUQ-13-F by Diodes Incorporated

DCX124EUQ-13-F

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

AEC-Q101; IATF 16949; MIL-STD-202

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

.3 V

DCX124EUQ-13R-F by Diodes Incorporated

DCX124EUQ-13R-F

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

AEC-Q101; IATF 16949; MIL-STD-202

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

.3 V

DDA114TUQ-13-F by Diodes Incorporated

DDA114TUQ-13-F

Diodes Incorporated

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;

.1 A

100

e3

1

2

260

PNP

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

SILICON

DDA114TUQ-7-F by Diodes Incorporated

DDA114TUQ-7-F

Diodes Incorporated

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 2;

.1 A

100

e3

1

2

260

PNP

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

SILICON

DDA143TUQ-13-F by Diodes Incorporated

DDA143TUQ-13-F

Diodes Incorporated

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3; Transistor Element Material: SILICON;

.1 A

160

e3

1

2

260

PNP

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

SILICON

DDA143TUQ-7-F by Diodes Incorporated

DDA143TUQ-7-F

Diodes Incorporated

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;

.1 A

160

e3

1

2

260

PNP

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

SILICON

DDC114TUQ-7-F by Diodes Incorporated

DDC114TUQ-7-F

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR, HIGH RELIABILITY

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

100

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

AEC-Q101

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

.3 V

DDC114YUQ-7-F by Diodes Incorporated

DDC114YUQ-7-F

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 4.7, HIGH RELIABILITY

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

68

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

AEC-Q101

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDC124EUQ-7-F by Diodes Incorporated

DDC124EUQ-7-F

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT-IN BIAS RESISTOR RATIO IS 1, HIGH RELIABILITY

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

56

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

AEC-Q101

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTC123ECAQ-7-F by Diodes Incorporated

DDTC123ECAQ-7-F

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTANCE RATIO IS 1, HIGH RELIABILITY

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

20

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

AEC-Q101

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

DDTC143TCAQ-13-F by Diodes Incorporated

DDTC143TCAQ-13-F

Diodes Incorporated

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 30;

.1 A

100

e3

1

1

260

NPN

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

DDTC143TCAQ-7-F by Diodes Incorporated

DDTC143TCAQ-7-F

Diodes Incorporated

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Terminal Finish: MATTE TIN; No. of Elements: 1;

.1 A

100

e3

1

1

260

NPN

.2 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

SMUN5315DW1T1G by Onsemi

SMUN5315DW1T1G

Onsemi

SMUN5315DW1T1G by Onsemi is a dual NPN and PNP BJT with 2 elements. Features include max power dissipation of 0.256W, min DC current gain of 160, and max collector current of 0.1A. Ideal for surface mount applications in electronics requiring high performance transistors.

.1 A

160

e3

1

2

260

NPN AND PNP

.256 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

SILICON

NSVUMC5NT2G by Onsemi

NSVUMC5NT2G

Onsemi

NPN AND PNP; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

COMPLEX

80

R-PDSO-G5

e3

1

2

5

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.15 W

AEC-Q101

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

.25 V

NSVB143TPDXV6T1G by Onsemi

NSVB143TPDXV6T1G

Onsemi

NSVB143TPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP types, ideal for switching applications. It features 2 elements with built-in resistor, hFE of 160, VCE of 50V, and IC of 0.1A. This transistor comes in a small outline package suitable for surface mount technology.

BUILT IN BIAS RESISTOR

.1 A

50 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

160

R-PDSO-F6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.5 W

AEC-Q101

BIP General Purpose Small Signal

YES

FLAT

DUAL

SWITCHING

SILICON

NSVB144EPDXV6T1G by Onsemi

NSVB144EPDXV6T1G

Onsemi

NSVB144EPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for surface mount applications. Featuring 2 elements, it offers max power dissipation of 0.5W, min hFE of 80, and max IC of 0.1A. Commonly used in low-power electronic circuits due to its silicon transistor element material.

.1 A

80

2

NPN AND PNP

.5 W

BIP General Purpose Small Signal

YES

SILICON

SMUN5215T1G by Onsemi

SMUN5215T1G

Onsemi

SMUN5215T1G by Onsemi is a NPN BJT transistor with max power dissipation of 0.31W, min hFE of 160, and max IC of 0.1A. Ideal for surface mount applications in electronics requiring high DC current gain and low power consumption.

.1 A

160

e3

1

1

260

NPN

.31 W

BIP General Purpose Small Signal

YES

MATTE TIN

30

SILICON

BC847C-TP-HF by Micro Commercial Components

BC847C-TP-HF

Micro Commercial Components

BC847C-TP-HF by Micro Commercial Components is a NPN BJT with hFE of 420, VCE of 45V, and fT of 100MHz. Ideal for small signal applications in electronics due to its SILICON material, 0.1A IC, and GULL WING terminals for surface mount assembly.

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

100 MHz

DTA123TET1G by Onsemi

DTA123TET1G

Onsemi

DTA123TET1G by Onsemi is a PNP BJT transistor with a max collector-emitter voltage of 50V and a min DC current gain of 160. It is designed for switching applications, features a built-in resistor, and comes in a small outline package suitable for surface mount technology.

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

160

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

.3 W

BIP General Purpose Small Signal

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

DTA144TET1G by Onsemi

DTA144TET1G

Onsemi

DTA144TET1G by Onsemi is a PNP BJT transistor with built-in resistor for switching applications. It has a min hFE of 120, max VCE of 50V, and max IC of 0.1A. This surface-mount device comes in a small outline package with Gull Wing terminals.

BUILT IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

120

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

.3 W

BIP General Purpose Small Signal

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

MMUN2140LT1G by Onsemi

MMUN2140LT1G

Onsemi

MMUN2140LT1G by Onsemi is a PNP BJT with 3 terminals and built-in resistor, ideal for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 120. This surface-mount transistor comes in a small outline package with matte tin finish.

BUILT IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

120

TO-236AB

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

.4 W

BIP General Purpose Small Signal

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

NSBC124XF3T5G by Onsemi

NSBC124XF3T5G

Onsemi

NSBC124XF3T5G by Onsemi is a NPN BJT with built-in resistor for switching applications. It has max. collector-emitter voltage of 50V, max. collector current of 0.1A, and min. DC current gain of 80 (hFE). This small outline transistor in plastic package is ideal for surface mount designs.

BUILT IN BIAS RESISTANCE RATIO IS 2.14

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

80

R-PDSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

.297 W

BIP General Purpose Small Signals

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

MUN5240T1G by Onsemi

MUN5240T1G

Onsemi

MUN5240T1G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a min hFE of 120, max VCE of 50V, and max IC of 0.1A. This small outline package with gull wing terminals is ideal for surface mount designs.

BUILT-IN BIAS RESISTOR

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

120

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

.31 W

BIP General Purpose Small Signal

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

BCR133WE6327HTSA1 by Infineon Technologies

BCR133WE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

130 MHz

BC846BWE6327HTSA1 by Infineon Technologies

BC846BWE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

.1 A

65 V

SINGLE

200

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

250 MHz

BC857BE6327HTSA1 by Infineon Technologies

BC857BE6327HTSA1

Infineon Technologies

BC857BE6327HTSA1 by Infineon Technologies is a PNP BJT transistor with hFE of 220, VCE of 45V, and IC of 0.1A. It is used for switching applications in surface mount designs due to its high transition frequency of 250MHz. The package style is small outline with Gull Wing terminals, suitable for compact electronic devices.

.1 A

45 V

SINGLE

220

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BC857CE6327HTSA1 by Infineon Technologies

BC857CE6327HTSA1

Infineon Technologies

Infineon's BC857CE6327HTSA1 is a PNP BJT transistor with hFE of 420, Vce of 45V, and Ic of 0.1A. Ideal for switching applications, it operates at up to 150°C with a transition frequency of 250MHz. This surface-mount device has a gull wing terminal form in a small outline package.

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BC847BWE6433HTMA1 by Infineon Technologies

BC847BWE6433HTMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;

.1 A

45 V

SINGLE

200

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BC847CWE6433HTMA1 by Infineon Technologies

BC847CWE6433HTMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

250 MHz

BC848AE6327HTSA1 by Infineon Technologies

BC848AE6327HTSA1

Infineon Technologies

BC848AE6327HTSA1 by Infineon Technologies is a NPN BJT transistor with a min DC current gain of 110 and max collector-emitter voltage of 30V. It is designed for switching applications, featuring a surface mount package style with Gull Wing terminals. With a nominal transition frequency of 250MHz, it is suitable for high-frequency electronic circuits.

.1 A

30 V

SINGLE

110

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BC849BE6327HTSA1 by Infineon Technologies

BC849BE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

LOW NOISE

.1 A

30 V

SINGLE

200

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BC849CWE6327HTSA1 by Infineon Technologies

BC849CWE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;

LOW NOISE

.1 A

30 V

SINGLE

420

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

250 MHz

BC850BE6327HTSA1 by Infineon Technologies

BC850BE6327HTSA1

Infineon Technologies

BC850BE6327HTSA1 by Infineon Technologies is a NPN BJT transistor with hFE of 200, VCE of 45V, and IC of 0.1A. It is used for switching applications in small outline packages with Gull Wing terminals. The transistor element is made of silicon and has a transition frequency of 250MHz.

LOW NOISE

.1 A

45 V

SINGLE

200

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BC850BWE6327HTSA1 by Infineon Technologies

BC850BWE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

LOW NOISE

.1 A

45 V

SINGLE

200

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

250 MHz

BC850CWE6327HTSA1 by Infineon Technologies

BC850CWE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;

LOW NOISE

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

250 MHz

BC857CWE6433HTMA1 by Infineon Technologies

BC857CWE6433HTMA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): 40;

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

250 MHz

BC857SE6433HTMA1 by Infineon Technologies

BC857SE6433HTMA1

Infineon Technologies

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;

.1 A

45 V

SEPARATE, 2 ELEMENTS

125

R-PDSO-G6

e3

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

250 MHz

BC858BWE6327HTSA1 by Infineon Technologies

BC858BWE6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

.1 A

30 V

SINGLE

220

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

250 MHz

BC858CE6327HTSA1 by Infineon Technologies

BC858CE6327HTSA1

Infineon Technologies

BC858CE6327HTSA1 by Infineon Technologies is a PNP BJT transistor with hFE of 420 and Vce of 30V. Ideal for switching applications, it has a max IC of 0.1A and fT of 250MHz. This surface-mount device in a small outline package is designed for high-speed operations.

.1 A

30 V

SINGLE

420

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BC860BWE6327HTSA1 by Infineon Technologies

BC860BWE6327HTSA1

Infineon Technologies

BC860BWE6327HTSA1 by Infineon Technologies is a PNP small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 45V and a min DC current gain of 220. It is commonly used for switching applications due to its surface mount capability and high transition frequency of 250MHz.

LOW NOISE

.1 A

45 V

SINGLE

220

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

250 MHz

BC860CWE6327HTSA1 by Infineon Technologies

BC860CWE6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;

LOW NOISE

.1 A

45 V

SINGLE

420

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

250 MHz

BCR116E6433HTMA1 by Infineon Technologies

BCR116E6433HTMA1

Infineon Technologies

Infineon's BCR116E6433HTMA1 is a NPN BJT with built-in resistor for switching applications. It features hFE of 70, VCE of 50V, and fT of 160MHz. This small outline transistor in plastic/epoxy package with gull wing terminals is ideal for surface mount designs.

BUILT-IN BIAS RESISTOR RATIO IS 10

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

160 MHz

BCR135E6433HTMA1 by Infineon Technologies

BCR135E6433HTMA1

Infineon Technologies

Infineon's BCR135E6433HTMA1 is a NPN BJT with built-in resistor for switching applications. Features include hFE of 70, VCE of 50V, and fT of 150MHz. Its Gull Wing terminals and small outline make it suitable for surface mount designs in various electronic circuits.

BUILT-IN BIAS RESISTOR RATIO IS 21.3636

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

150 MHz

BCR141E6433HTMA1 by Infineon Technologies

BCR141E6433HTMA1

Infineon Technologies

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 50;

BUILT-IN BIAS RESISTOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

50

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

130 MHz

BCR142WE6327HTSA1 by Infineon Technologies

BCR142WE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-G3;

BUILT-IN BIAS RESISTOR RATIO IS 2.1363

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

150 MHz

BCR158E6327HTSA1 by Infineon Technologies

BCR158E6327HTSA1

Infineon Technologies

Infineon BCR158E6327HTSA1 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 70, VCE of 50V, and fT of 200MHz. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

BUILT-IN BIAS RESISTOR RATIO IS 21.3636

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

70

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

200 MHz