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BC850BE6327HTSA1

Infineon Technologies

BC850BE6327HTSA1 by Infineon Technologies

BC850BE6327HTSA1 by Infineon Technologies is a NPN BJT transistor with hFE of 200, VCE of 45V, and IC of 0.1A. It is used for switching applications in small outline packages with Gull Wing terminals. The transistor element is made of silicon and has a transition frequency of 250MHz.

Median Price

$0.052

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 270 parts In-Stock

1+ parts

$0.069

100+ parts

$0.063

1k+ parts

$0.059

10k+ parts

-

270

$0.069

$0.063

$0.059

-

Rochester

USA . 670,350 parts In-Stock

1+ parts

-

100+ parts

$0.045

1k+ parts

$0.037

10k+ parts

$0.033

670,350

-

$0.045

$0.037

$0.033

DigiKey

USA . 508,685 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.060

508,685

-

-

-

$0.060

Verical

USA . 216,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.041

216,000

-

-

-

$0.041

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 342 parts In-Stock

1+ parts

$0.028

100+ parts

-

1k+ parts

-

10k+ parts

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342

$0.028

-

-

-

Nova Conductors

Japan . 650 parts In-Stock

1+ parts

$0.059

100+ parts

-

1k+ parts

-

10k+ parts

-

650

$0.059

-

-

-

DigiKey Marketplace

USA . 346,685 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

346,685

-

-

-

-

NAC Semi

USA . 18,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.178

18,000

-

-

-

$0.178

VNN

France . 705 parts In-Stock

1+ parts

-

100+ parts

-

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705

-

-

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Vyrian

USA . 200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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200

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 279,825 parts In-Stock

1+ parts

$0.025

100+ parts

$0.024

1k+ parts

$0.024

10k+ parts

-

279,825

$0.025

$0.024

$0.024

-

Corphita

USA . 416 parts In-Stock

1+ parts

$0.026

100+ parts

-

1k+ parts

-

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416

$0.026

-

-

-

Ampacity Inc.

Singapore . 280,129 parts In-Stock

1+ parts

$0.054

100+ parts

-

1k+ parts

-

10k+ parts

-

280,129

$0.054

-

-

-

Modulus Dynamics

Lithuania . 18,024 parts In-Stock

1+ parts

$0.058

100+ parts

$0.056

1k+ parts

$0.053

10k+ parts

-

18,024

$0.058

$0.056

$0.053

-

Corohmni

South Africa . 336 parts In-Stock

1+ parts

$0.058

100+ parts

-

1k+ parts

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336

$0.058

-

-

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Argo Parts USA

USA . 2,619 parts In-Stock

1+ parts

$0.059

100+ parts

-

1k+ parts

-

10k+ parts

$0.058

2,619

$0.059

-

-

$0.058

Continental Prestige Electronics

USA . 51 parts In-Stock

1+ parts

$0.059

100+ parts

-

1k+ parts

-

10k+ parts

$0.058

51

$0.059

-

-

$0.058

Advanced Electronics

New Zealand . 270 parts In-Stock

1+ parts

$0.069

100+ parts

$0.063

1k+ parts

$0.059

10k+ parts

-

270

$0.069

$0.063

$0.059

-

Aztec Data Supply Inc.

USA . 88 parts In-Stock

1+ parts

$1.227

100+ parts

-

1k+ parts

-

10k+ parts

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88

$1.227

-

-

-

AZTECH Wire

Italy . 200 parts In-Stock

1+ parts

$19.650

100+ parts

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200

$19.650

-

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Eastek

USA . 171,000 parts In-Stock

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171,000

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Perfect Parts

USA . 148,893 parts In-Stock

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148,893

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QUARKTWIN TECHNOLOGY LTD

USA . 27,173 parts In-Stock

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27,173

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

1+ parts

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2,500

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$0.058

1k+ parts

$0.056

10k+ parts

$0.055

1,000

-

$0.058

$0.056

$0.055

Overview

Elevate your electronic designs with the BC850BE6327HTSA1 by Infineon Technologies. Crafted with precision and expertise, this Small Signal Bipolar Junction Transistor offers unmatched quality and reliability. Ideal for switching applications, this NPN transistor delivers exceptional performance with a DC current gain of 200 and a maximum collector-emitter voltage of 45V. With its compact design and surface-mount capabilities, the BC850BE6327HTSA1 is perfect for a wide range of projects. Trust in Infineon Technologies to provide innovative solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring reliability and durability.

Polarity or Channel Type: NPN

Commonly used for amplification and switching applications, making it versatile in various circuits.

Configuration: SINGLE

Simplifies circuit design and makes it easier to integrate into different systems.

Transistor Application: SWITCHING

Designed specifically for fast switching applications, ensuring efficient signal processing.

Surface Mount: YES

Enables easy installation on circuit boards, saving space and simplifying manufacturing processes.

Package Shape: RECTANGULAR

Facilitates easy placement and orientation during assembly.

Terminal Form: GULL WING

Provides secure connections and easy soldering on the PCB.

Minimum DC Current Gain (hFE): 200

Ensures stable and consistent amplification of signals.

Maximum Collector-Emitter Voltage: 45 V

Can handle relatively high voltage levels, suitable for a wide range of applications.

Transistor Element Material: SILICON

Highly reliable semiconductor material with good electrical properties.

Maximum Collector Current (IC): 0.1 A

Can handle moderate current levels, suitable for low-power applications.

Terminal Finish: TIN

Provides good conductivity and ensures reliable electrical connections.

Terminal Position: DUAL

Allows for easy and secure mounting on the PCB.

Nominal Transition Frequency (fT): 250 MHz

Indicates high-speed performance, ideal for applications requiring fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC850BE6327HTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC850BE6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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