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BCR158E6327HTSA1

Infineon Technologies

BCR158E6327HTSA1 by Infineon Technologies

Infineon BCR158E6327HTSA1 is a PNP BJT with built-in resistor for switching applications. Features include hFE of 70, VCE of 50V, and fT of 200MHz. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

Median Price

$0.054

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 18,000 parts In-Stock

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Verical

USA . 18,000 parts In-Stock

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18,000

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Chip1Stop

Japan . 4,452 parts In-Stock

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4,452

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Rochester

USA . 2,308 parts In-Stock

1+ parts

-

100+ parts

$0.054

1k+ parts

$0.045

10k+ parts

$0.040

2,308

-

$0.054

$0.045

$0.040

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 87 parts In-Stock

1+ parts

$0.028

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-

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87

$0.028

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Nova Conductors

Japan . 600 parts In-Stock

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$0.083

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600

$0.083

-

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Schukat

Germany . 51,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.059

10k+ parts

$0.037

51,000

-

-

$0.059

$0.037

Chip Stock

USA . 20,300 parts In-Stock

1+ parts

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20,300

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NAC Semi

USA . 18,000 parts In-Stock

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$0.117

18,000

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$0.117

Rutronik

Germany . 12,000 parts In-Stock

1+ parts

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$0.040

12,000

-

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$0.040

TME

Poland . 5,714 parts In-Stock

1+ parts

-

100+ parts

$0.056

1k+ parts

$0.043

10k+ parts

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5,714

-

$0.056

$0.043

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Vyrian

USA . 5,604 parts In-Stock

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5,604

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VNN

France . 3,738 parts In-Stock

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3,738

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Distributors (Availability)

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Ampacity Inc.

Singapore . 7,596 parts In-Stock

1+ parts

$0.025

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7,596

$0.025

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Corphita

USA . 55 parts In-Stock

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$0.027

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55

$0.027

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Component Stockers USA

USA . 34,637 parts In-Stock

1+ parts

$0.040

100+ parts

$0.040

1k+ parts

$0.030

10k+ parts

$0.090

34,637

$0.040

$0.040

$0.030

$0.090

Continental Prestige Electronics

USA . 5,638 parts In-Stock

1+ parts

$0.052

100+ parts

-

1k+ parts

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10k+ parts

$0.051

5,638

$0.052

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-

$0.051

Argo Parts USA

USA . 1,027 parts In-Stock

1+ parts

$0.052

100+ parts

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10k+ parts

$0.051

1,027

$0.052

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-

$0.051

Microchip USA

USA . 2,364 parts In-Stock

1+ parts

$0.308

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2,364

$0.308

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Corohmni

South Africa . 199 parts In-Stock

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$0.503

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199

$0.503

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Modulus Dynamics

Lithuania . 10,228 parts In-Stock

1+ parts

$0.517

100+ parts

$0.496

1k+ parts

$0.476

10k+ parts

-

10,228

$0.517

$0.496

$0.476

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Perfect Parts

USA . 109,991 parts In-Stock

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109,991

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Eastek

USA . 39,000 parts In-Stock

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 6,097 parts In-Stock

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6,097

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

$0.081

1k+ parts

$0.079

10k+ parts

$0.077

2,000

-

$0.081

$0.079

$0.077

Infinite Electronics LLP (Excess)

. 1,201 parts In-Stock

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1,201

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Overview

Looking for a reliable and efficient solution for your switching applications? Look no further than the BCR158E6327HTSA1 by Infineon Technologies. With a reputation for quality and innovation, Infineon delivers cutting-edge Small Signal Bipolar Junction Transistors (BJT) like no other. The BCR158E6327HTSA1 offers customers a PNP configuration with a built-in resistor, making it ideal for a wide range of switching tasks. Its high DC current gain, low collector-emitter voltage, and fast transition frequency ensure optimal performance. Trust Infineon to provide top-notch products that meet your needs every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the transistor from environmental factors, ensuring a long lifespan.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuit designs.

Configuration: SINGLE WITH BUILT-IN RESISTOR

Simplifies circuit design by eliminating the need for an external resistor.

Transistor Application: SWITCHING

Suitable for applications that require switching functionality.

Surface Mount: YES

Enables easy and efficient installation on PCBs, saving space and assembly time.

Package Shape: RECTANGULAR

Facilitates easy placement and orientation during assembly.

Terminal Form: GULL WING

Ensures reliable connectivity and solder joint strength.

No. of Terminals: 3

Simplifies circuit connections and reduces complexity in design.

Minimum DC Current Gain (hFE): 70

Provides stable amplification of current in the circuit.

Maximum Collector-Emitter Voltage: 50 V

Allows for safe operation within specified voltage limits.

Transistor Element Material: SILICON

Ensures high performance and reliability due to the superior material properties of silicon.

Maximum Collector Current (IC): 0.1 A

Supports moderate current flow while maintaining efficiency.

Terminal Finish: TIN

Provides good solderability and corrosion resistance for long-term reliability.

Terminal Position: DUAL

Allows for flexible orientation and positioning within the circuit layout.

Nominal Transition Frequency (fT): 200 MHz

Enables high-frequency operation suitable for various applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR158E6327HTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 21.3636

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR158E6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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