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BCR116E6433HTMA1

Infineon Technologies

BCR116E6433HTMA1 by Infineon Technologies

Infineon's BCR116E6433HTMA1 is a NPN BJT with built-in resistor for switching applications. It features hFE of 70, VCE of 50V, and fT of 160MHz. This small outline transistor in plastic/epoxy package with gull wing terminals is ideal for surface mount designs.

Median Price

$0.676

Lifecycle Status

EOL

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 150 parts In-Stock

1+ parts

$1.340

100+ parts

$1.219

1k+ parts

$1.099

10k+ parts

-

150

$1.340

$1.219

$1.099

-

Verical

USA . 80,000 parts In-Stock

1+ parts

-

100+ parts

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80,000

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-

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Arrow

USA . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.013

30,000

-

-

-

$0.013

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.079

100+ parts

-

1k+ parts

-

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500

$0.079

-

-

-

Digiode

USA . 403 parts In-Stock

1+ parts

$1.273

100+ parts

-

1k+ parts

-

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403

$1.273

-

-

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TME

Poland . 30,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.041

30,000

-

-

-

$0.041

Vyrian

USA . 7,207 parts In-Stock

1+ parts

-

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7,207

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-

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VNN

France . 6,373 parts In-Stock

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6,373

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 213,029 parts In-Stock

1+ parts

$0.026

100+ parts

-

1k+ parts

-

10k+ parts

-

213,029

$0.026

-

-

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Argo Parts USA

USA . 3,193 parts In-Stock

1+ parts

$0.079

100+ parts

-

1k+ parts

-

10k+ parts

$0.077

3,193

$0.079

-

-

$0.077

Continental Prestige Electronics

USA . 2,925 parts In-Stock

1+ parts

$0.079

100+ parts

-

1k+ parts

-

10k+ parts

$0.077

2,925

$0.079

-

-

$0.077

Modulus Dynamics

Lithuania . 14,506 parts In-Stock

1+ parts

$0.421

100+ parts

$0.404

1k+ parts

$0.387

10k+ parts

-

14,506

$0.421

$0.404

$0.387

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Corohmni

South Africa . 146 parts In-Stock

1+ parts

$0.449

100+ parts

-

1k+ parts

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10k+ parts

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146

$0.449

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Corphita

USA . 373 parts In-Stock

1+ parts

$1.206

100+ parts

-

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373

$1.206

-

-

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Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$1.340

100+ parts

$1.219

1k+ parts

$1.099

10k+ parts

-

150

$1.340

$1.219

$1.099

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Aztec Data Supply Inc.

USA . 277 parts In-Stock

1+ parts

$1.674

100+ parts

-

1k+ parts

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10k+ parts

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277

$1.674

-

-

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AZTECH Wire

Italy . 924 parts In-Stock

1+ parts

$15.080

100+ parts

-

1k+ parts

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10k+ parts

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924

$15.080

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

1+ parts

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100+ parts

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8,000

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Netroflash

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$0.077

1k+ parts

$0.075

10k+ parts

$0.073

50

-

$0.077

$0.075

$0.073

Overview

Elevate your electronic designs with the BCR116E6433HTMA1 by Infineon Technologies, a high-quality Small Signal Bipolar Junction Transistor (BJT) that offers unparalleled performance and reliability. Manufactured by industry leader Infineon Technologies, this NPN transistor with a built-in resistor is ideal for switching applications. With a maximum collector-emitter voltage of 50V and a minimum DC current gain of 70, this transistor delivers exceptional efficiency and precision in a compact package. Trust Infineon Technologies to provide innovative solutions for your electronic needs, and experience the superior value and benefits that the BCR116E6433HTMA1 brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile.

Configuration: SINGLE WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and reduces the need for additional components.

Transistor Application: SWITCHING

Designed for switching applications, this transistor provides fast switching speeds and efficient performance.

Surface Mount: YES

Surface mount capability allows for easy installation on PCBs, saving space and facilitating automated assembly.

Package Shape: RECTANGULAR

The rectangular shape is ideal for efficient PCB placement and soldering in tight spaces.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical stability and secure solder joints during surface mount assembly.

No. of Terminals: 3

With 3 terminals, this transistor is easy to connect in circuits and offers flexibility in design.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and is suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 70

A minimum DC current gain of 70 ensures reliable amplification and stable performance in various circuits.

Maximum Collector-Emitter Voltage: 50 V

With a high maximum voltage rating of 50V, this transistor can handle higher voltage applications with ease.

Transistor Element Material: SILICON

The use of silicon as the transistor element material provides high performance, reliability, and temperature tolerance.

Maximum Collector Current (IC): 0.1 A

The maximum collector current of 0.1A allows for efficient power handling and reliable operation in various circuits.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit connections and supports versatile PCB layouts.

Nominal Transition Frequency (fT): 160 MHz

With a high nominal transition frequency of 160 MHz, this transistor is suitable for high-frequency applications and fast switching speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCR116E6433HTMA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 10

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BCR116E6433HTMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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