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BC858CE6327HTSA1

Infineon Technologies

BC858CE6327HTSA1 by Infineon Technologies

BC858CE6327HTSA1 by Infineon Technologies is a PNP BJT transistor with hFE of 420 and Vce of 30V. Ideal for switching applications, it has a max IC of 0.1A and fT of 250MHz. This surface-mount device in a small outline package is designed for high-speed operations.

Median Price

$0.044

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16

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1k+

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Arrow

USA . 24,000 parts In-Stock

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$0.012

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$0.012

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Rochester

USA . 244,480 parts In-Stock

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$0.045

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$0.037

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$0.033

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$0.045

$0.037

$0.033

DigiKey

USA . 169,480 parts In-Stock

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$0.060

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$0.060

Verical

USA . 162,000 parts In-Stock

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Farnell

UK . 75,000 parts In-Stock

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Chip1Stop

Japan . 21,000 parts In-Stock

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EBV Elektronik

Germany . 9,000 parts In-Stock

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Digiode

USA . 526 parts In-Stock

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$0.022

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526

$0.022

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Nova Conductors

Japan . 750 parts In-Stock

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$0.033

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750

$0.033

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DigiKey Marketplace

USA . 157,480 parts In-Stock

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Rutronik

Germany . 9,000 parts In-Stock

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$0.046

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Vyrian

USA . 7,485 parts In-Stock

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NAC Semi

USA . 6,000 parts In-Stock

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$0.182

Contempo Components LLC

USA . 5,300 parts In-Stock

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Component Sense

UK . 2,980 parts In-Stock

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VNN

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Ampacity Inc.

Singapore . 90,597 parts In-Stock

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Corphita

USA . 268 parts In-Stock

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Continental Prestige Electronics

USA . 2,255 parts In-Stock

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Argo Parts USA

USA . 2,212 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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$0.033

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Aztec Data Supply Inc.

USA . 10 parts In-Stock

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$0.447

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$0.447

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Modulus Dynamics

Lithuania . 9,383 parts In-Stock

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$0.707

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$0.679

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$0.650

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Corohmni

South Africa . 520 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Eastek

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Alle Elektronik GmbH

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Overview

Enhance your electronic projects with the BC858CE6327HTSA1 by Infineon Technologies. Manufactured with the highest quality standards, this Small Signal Bipolar Junction Transistor (BJT) offers reliable performance in switching applications. With a maximum collector-emitter voltage of 30V and a minimum DC current gain of 420, this PNP transistor delivers exceptional efficiency. Whether you're a hobbyist or a professional, this surface mount transistor provides value and versatility for a wide range of projects. Trust in the expertise of Infineon Technologies and experience the benefits of this high-quality component today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it suitable for various environments and applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications and can handle high current flows. This makes the transistor versatile for different circuit designs.

Configuration: SINGLE

The single configuration simplifies circuit design and allows for easier integration into electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can efficiently control the flow of current within a circuit, enhancing its performance.

Surface Mount: YES

With surface mount capability, this transistor can be easily mounted onto printed circuit boards, saving space and facilitating automated manufacturing processes.

Package Shape: RECTANGULAR

The rectangular shape of the package ensures a compact and efficient design, suitable for applications where space is limited.

Terminal Form: GULL WING

The gull wing terminal form allows for easy soldering and provides secure connections, ensuring reliable performance in various operating conditions.

No. of Terminals: 3

The three terminals enable easy connection to external circuitry, simplifying the overall circuit design.

Minimum DC Current Gain (hFE): 420

With a minimum current gain of 420, this transistor can amplify weak signals effectively, making it suitable for a wide range of applications.

Maximum Collector-Emitter Voltage: 30 V

The high maximum voltage rating ensures that the transistor can withstand potentially high voltage spikes, increasing the reliability of the circuit.

Transistor Element Material: SILICON

Silicon transistors offer high performance, low noise, and good temperature stability, making them ideal for various electronic applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current loads, making it suitable for switch and control applications.

Terminal Finish: TIN

The tin terminal finish provides corrosion resistance, ensuring long-term reliability and performance in various environmental conditions.

Terminal Position: DUAL

The dual terminal position allows for flexible mounting options and easy connection, making the transistor versatile for different circuit layouts.

Nominal Transition Frequency (fT): 250 MHz

With a high nominal transition frequency of 250 MHz, this transistor can switch signals at high speeds, making it ideal for applications requiring fast response times.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC858CE6327HTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

420

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC858CE6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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