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BC860BWE6327HTSA1

Infineon Technologies

BC860BWE6327HTSA1 by Infineon Technologies

BC860BWE6327HTSA1 by Infineon Technologies is a PNP small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 45V and a min DC current gain of 220. It is commonly used for switching applications due to its surface mount capability and high transition frequency of 250MHz.

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4

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1k+

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Vyrian

USA . 8,145 parts In-Stock

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VNN

France . 4,385 parts In-Stock

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Digiode

USA . 841 parts In-Stock

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841

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Nova Conductors

Japan . 150 parts In-Stock

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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$0.857

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$0.780

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$0.703

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Corohmni

South Africa . 239 parts In-Stock

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$1.205

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Modulus Dynamics

Lithuania . 15,702 parts In-Stock

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$1.175

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$1.126

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AZTECH Wire

Italy . 624 parts In-Stock

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$12.227

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Ampacity Inc.

Singapore . 1,220 parts In-Stock

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$25.050

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QUARKTWIN TECHNOLOGY LTD

USA . 24,971 parts In-Stock

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Microchip USA

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Corphita

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Aranea Global

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Overview

Looking for a high-quality small signal bipolar junction transistor? Look no further than the BC860BWE6327HTSA1 by Infineon Technologies! With its superior manufacturing and trusted reputation, Infineon Technologies delivers reliable and efficient products. The BC860BWE6327HTSA1 is perfect for switching applications and offers great value and benefits to customers. Its PNP polarity and single configuration make it easy to use, while its surface mount and small outline package shape provide flexibility. Don't miss out on this versatile and high-performing transistor!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable and lightweight material ensures the product's longevity and ease of handling, making it a reliable choice.

Polarity or Channel Type: PNP

This PNP configuration allows for easy integration and compatibility in electronic circuits, making it versatile for a wide range of applications.

Configuration: SINGLE

With a single configuration, this BJT simplifies circuit design and reduces complexity, enabling easier installation and troubleshooting.

Transistor Application: SWITCHING

Designed specifically for switching applications, this BJT offers fast and efficient performance, enabling smooth switching operations.

Surface Mount: YES

Featuring surface mount technology, this BJT allows for compact and space-saving designs, facilitating flexible placement on circuit boards.

Package Shape: RECTANGULAR

The rectangular package shape provides stability and ease of mounting, ensuring a secure fit within electronic devices.

Terminal Form: GULL WING

The gull wing terminal form enhances solderability and mechanical strength, ensuring reliable connections and increasing product longevity.

No. of Elements: 1

With a single element, this BJT simplifies circuit design and reduces the chance of component failures, making it a reliable and efficient choice.

No. of Terminals: 3

With three terminals, this BJT offers versatility in circuit connectivity, allowing for flexible configuration and integration in various electronic systems.

Package Style (Meter): SMALL OUTLINE

The small outline package style makes this BJT suitable for compact devices, enabling miniaturization without compromising performance.

Minimum DC Current Gain (hFE): 220

With a minimum DC current gain of 220, this BJT ensures amplification capabilities, providing accurate signal processing and robust performance.

Maximum Collector-Emitter Voltage: 45 V

The maximum collector-emitter voltage of 45 V allows this BJT to handle a wide range of voltage requirements, ensuring compatibility in various applications.

Transistor Element Material: SILICON

Made from silicon, a widely used and reliable material, this BJT offers excellent thermal stability and high breakdown voltage, guaranteeing long-term reliability.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this BJT provides sufficient power handling capability, making it suitable for a variety of circuits and load requirements.

Terminal Finish: MATTE TIN

The matte tin terminal finish enhances solderability, ensuring strong and reliable electrical connections, while also improving resistance to corrosion.

Terminal Position: DUAL

Featuring a dual terminal position, this BJT allows for flexible and convenient soldering, enabling easy integration with other components on the circuit board.

Maximum Time At Peak Reflow Temperature (s): 40

This BJT has the ability to withstand a maximum time of 40 seconds at the peak reflow temperature, ensuring durable performance during soldering processes.

Peak Reflow Temperature °C: 260

Designed to endure a peak reflow temperature of 260°C, this BJT guarantees reliable solder joint formation, offering excellent thermal stability and robust connection.

Nominal Transition Frequency (fT): 250 MHz

With a nominal transition frequency of 250 MHz, this BJT delivers fast and accurate signal switching, making it ideal for high-speed applications requiring precise data transfers.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC860BWE6327HTSA1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

220

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC860BWE6327HTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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