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BC860AMTF

Onsemi

BC860AMTF by Onsemi

BC860AMTF by Onsemi is a PNP BJT transistor for switching applications. It has a max VCEsat of 0.65V, hFE of 110, and fT of 150MHz. With a max collector-emitter voltage of 45V and operating temperature of 150 °C, it's ideal for small outline surface mount designs.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 2,880 parts In-Stock

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Digiode

USA . 2,400 parts In-Stock

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Component Stockers USA

USA . 800 parts In-Stock

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$99.990

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Kepictronics

USA . 306,000 parts In-Stock

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Metaverse IC Inc.

Canada . 306,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 28,570 parts In-Stock

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A-Z Elektronik GmbH

Germany . 11,465 parts In-Stock

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Kulean Microsystems

USA . 8,255 parts In-Stock

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Problanco Electronics

Mexico . 8,149 parts In-Stock

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SupplyDigital Components

Austria . 6,639 parts In-Stock

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TANS Electronics

Latvia . 5,596 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,643 parts In-Stock

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Corphita

USA . 1,707 parts In-Stock

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Northwest PG Solutions

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UHIMA Technologies

Türkiye . 697 parts In-Stock

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Supply Digital

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Corohmni

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Native Components

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Overview

Upgrade your electronic projects with the BC860AMTF by Onsemi - a high-quality small signal bipolar junction transistor perfect for switching applications. Manufactured by Onsemi, this PNP transistor offers reliability and efficiency in a compact package. With a low VCEsat of 0.65V and a minimum DC current gain of 110, this transistor delivers exceptional performance while dissipating only 0.31W of power. Ideal for a variety of applications, this transistor is surface mountable and operates at temperatures up to 150 °C. Enhance your designs with the BC860AMTF and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials offer high durability and resistance to heat, making this transistor suitable for a wide range of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high side switching applications, providing versatility and compatibility in circuit design.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into electronic systems.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers high efficiency and fast switching speeds.

Surface Mount: YES

Surface mount capability allows for easy and efficient installation on PCBs, saving space and reducing assembly time.

Maximum VCEsat: 0.65 V

Low VCEsat minimizes power loss and improves overall efficiency in switching operations.

Package Shape: RECTANGULAR

Rectangular shape provides a compact footprint and allows for easy placement on PCBs.

Terminal Form: GULL WING

Gull wing terminals offer secure connection points and facilitate efficient soldering during assembly.

No. of Terminals: 3

With three terminals, this transistor is easy to interface with other components in a circuit.

Maximum Power Dissipation (Abs): 0.31 W

Low power dissipation ensures the transistor can handle moderate power levels while maintaining reliability.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and is ideal for compact electronic designs.

Minimum DC Current Gain (hFE): 110

High DC current gain ensures stability and consistent performance in various operating conditions.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows the transistor to operate reliably in a wide range of environments.

Maximum Collector-Base Capacitance: 6 pF

Low collector-base capacitance helps reduce signal distortion and improve high-frequency performance.

Maximum Collector-Emitter Voltage: 45 V

High collector-emitter voltage rating provides flexibility in circuit design and ensures safe operation under various conditions.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, making it suitable for demanding applications.

Maximum Collector Current (IC): 0.1 A

Suitable for low to moderate current applications, ensuring stability and efficiency in various switching scenarios.

Terminal Position: DUAL

Dual terminal position allows for easy integration into circuit designs and provides flexibility in component placement.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency enables fast signal amplification and switching, making this transistor ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC860AMTF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

6 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

110

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.65 V

Trade Compliance

BC860AMTF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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