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BC868-25,115

NXP Semiconductors

BC868-25,115 by NXP Semiconductors

NXP Semiconductors BC868-25,115 is a NPN BJT transistor for switching applications. Features include 1W power dissipation, hFE of 160, and max operating temp of 150°C. Ideal for small outline packages requiring high collector current up to 1A at 20V.

Median Price

$0.128

Lifecycle Status

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1k+

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Element14

Singapore . 448 parts In-Stock

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$0.532

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$0.225

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$0.217

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448

$0.532

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$0.217

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Rochester

USA . 18,219 parts In-Stock

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$0.115

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$0.095

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$0.085

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$0.115

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$0.085

Verical

USA . 10,000 parts In-Stock

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$0.106

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$0.106

Chip1Stop

Japan . 4,000 parts In-Stock

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$0.114

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RS (Exports)

UK . 2,740 parts In-Stock

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$0.131

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Arrow

USA . 2,000 parts In-Stock

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$0.128

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$0.086

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$0.086

Farnell

UK . 448 parts In-Stock

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$0.163

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$0.157

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Digiode

USA . 4,406 parts In-Stock

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$0.089

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$0.089

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Nova Conductors

Japan . 1,000 parts In-Stock

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$0.140

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1,000

$0.140

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Maritex

Poland . 515 parts In-Stock

1+ parts

$2.701

100+ parts

$1.581

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$1.312

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515

$2.701

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Chip Stock

USA . 184,000 parts In-Stock

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IBS Electronics

USA . 32,000 parts In-Stock

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$0.827

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$0.785

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$0.827

$0.785

NAC Semi

USA . 26,000 parts In-Stock

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$1.180

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Vyrian

USA . 5,242 parts In-Stock

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Anansix

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Cogito LLC

Ukraine . 500 parts In-Stock

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Bristol Electronics

USA . 452 parts In-Stock

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$0.487

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$0.240

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452

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$0.240

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VNN

France . 300 parts In-Stock

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Cyclops Electronics Ltd

UK . 124 parts In-Stock

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QIE Inc.

USA . 63 parts In-Stock

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Prism Electronics

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Distributors (Availability)

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Corphita

USA . 1,815 parts In-Stock

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$0.085

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$0.085

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Component Stockers USA

USA . 83,787 parts In-Stock

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$0.100

100+ parts

$0.090

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$0.080

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$0.110

83,787

$0.100

$0.090

$0.080

$0.110

AZTECH Wire

Italy . 9,574 parts In-Stock

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$0.130

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Argo Parts USA

USA . 4,365 parts In-Stock

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$0.136

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Netroflash

USA . 100 parts In-Stock

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Corohmni

South Africa . 256 parts In-Stock

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Ampacity Inc.

Singapore . 15,050 parts In-Stock

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Continental Prestige Electronics

USA . 1,808 parts In-Stock

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$0.183

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Advanced Electronics

New Zealand . 270 parts In-Stock

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$1.510

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$1.374

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Eastek

USA . 76,000 parts In-Stock

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Perfect Parts

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Glotronic Ltd.

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Supply Digital

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GreenTree Electronics

Israel . 1,000 parts In-Stock

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UNI Independent Distributors

Spain . 20 parts In-Stock

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Overview

Enhance your electronic designs with the BC868-25,115 Small Signal Bipolar Junction Transistor by NXP Semiconductors. Known for their high-quality components, NXP delivers reliable performance in this NPN transistor for switching applications. With a maximum power dissipation of 1W and a collector-emitter voltage of 20V, this transistor offers exceptional value and versatility. Whether you're working on consumer electronics or industrial automation, the BC868-25,115 provides the efficiency and precision you need to bring your projects to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package lightweight and durable, providing protection for the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good performance and reliability.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate this transistor into different applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient operation and performance in various electronic devices.

Surface Mount: YES

Surface mount capability allows for easy placement on PCBs, saving space and facilitating automated assembly processes.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1W, this transistor can handle moderate power levels without overheating.

Minimum DC Current Gain (hFE): 160

High minimum current gain ensures stable and reliable amplification in circuit applications.

Maximum Collector-Emitter Voltage: 20 V

Suitable for low to medium voltage applications, offering protection against over-voltage conditions.

Maximum Collector Current (IC): 1 A

Capable of handling current up to 1A, making it suitable for a wide range of small signal applications.

Nominal Transition Frequency (fT): 40 MHz

High transition frequency allows for fast switching speeds, making it ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC868-25,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

160

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC868-25,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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