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BC860C,235

NXP Semiconductors

BC860C,235 by NXP Semiconductors

NXP Semiconductors' BC860C,235 is a PNP BJT transistor with VCEsat of 0.65V and hFE of 420. Ideal for amplifier applications, it has a max IC of 0.1A and operates up to 150°C. The GULL WING terminal form and small outline package make it suitable for surface mount designs.

Median Price

$0.022

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

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Future Electronics

Canada . 30,000 parts In-Stock

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$0.011

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$0.011

Rochester

USA . 8,550 parts In-Stock

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$0.032

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$0.027

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$0.024

8,550

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$0.032

$0.027

$0.024

Distributors (In-Stock)

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Digiode

USA . 2,181 parts In-Stock

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$0.021

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Nova Conductors

Japan . 10 parts In-Stock

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$0.037

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Chip Stock

USA . 95,000 parts In-Stock

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IBS Electronics

USA . 30,000 parts In-Stock

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NAC Semi

USA . 20,000 parts In-Stock

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Vyrian

USA . 3,652 parts In-Stock

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Anansix

USA . 752 parts In-Stock

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VNN

France . 750 parts In-Stock

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750

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Distributors (Availability)

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Ampacity Inc.

Singapore . 13,394 parts In-Stock

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$0.019

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Corphita

USA . 4,972 parts In-Stock

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AZTECH Wire

Italy . 12,851 parts In-Stock

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Corohmni

South Africa . 625 parts In-Stock

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$0.464

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$1.712

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$1.558

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$1.404

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$1.712

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Eastek

USA . 40,000 parts In-Stock

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$0.034

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iodParts Technologies Inc.

India . 20,000 parts In-Stock

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UNI Independent Distributors

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Argo Parts USA

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Perfect Parts

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Continental Prestige Electronics

USA . 792 parts In-Stock

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Supply Digital

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Overview

Enhance your electronic projects with the BC860C,235 from NXP Semiconductors. As a leading manufacturer in the industry, NXP ensures top-quality small signal bipolar junction transistors for amplifier applications. With a maximum VCEsat of 0.65V and a minimum DC current gain of 420, this PNP transistor offers superior performance and reliability. Whether you're a hobbyist or a professional, experience the value and benefits of using the BC860C,235 in your next project. Unlock new possibilities and achieve outstanding results with this high-quality component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring reliable performance over time.

Polarity or Channel Type: PNP

Ideal for applications where PNP transistors are required.

Configuration: SINGLE

Simplifies circuit design and integration.

Transistor Application: AMPLIFIER

Designed specifically for use in amplifier circuits, ensuring optimal performance in such applications.

Surface Mount: YES

Facilitates easy installation and allows for compact circuit designs.

Maximum VCEsat: 0.65 V

Low collector-emitter saturation voltage helps minimize power loss and improve efficiency.

Package Shape: RECTANGULAR

Allows for efficient utilization of space on a circuit board.

Terminal Form: GULL WING

Provides mechanical strength and ease of soldering during assembly.

No. of Terminals: 3

Simple and straightforward connection setup.

Maximum Power Dissipation (Abs): 0.25 W

Suitable for low power applications, ensuring optimal performance and reliability.

Package Style (Meter): SMALL OUTLINE

Ideal for applications requiring compact components and space-saving designs.

Minimum DC Current Gain (hFE): 420

High DC current gain provides excellent amplification capabilities in circuits.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, ensuring reliability in various environmental conditions.

Maximum Collector-Emitter Voltage: 45 V

Allows for operation in circuits with higher voltage requirements.

Transistor Element Material: SILICON

Silicon offers high performance and reliability in transistor applications.

Maximum Collector Current (IC): 0.1 A

Suits applications with low collector current requirements.

Terminal Finish: TIN

Provides good conductivity for reliable connections.

Terminal Position: DUAL

Facilitates easy and secure connections in circuit designs.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper soldering and reflow processes during assembly.

Peak Reflow Temperature °C: 260

Can withstand high peak reflow temperatures during assembly processes.

Nominal Transition Frequency (fT): 100 MHz

Suitable for high-frequency applications, ensuring reliable and efficient performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC860C,235 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.65 V

Trade Compliance

BC860C,235 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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