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BC869,115

NXP Semiconductors

BC869,115 by NXP Semiconductors

BC869,115 by NXP Semiconductors is a PNP BJT transistor with 3 terminals. It has a hFE of 60 and can handle up to 1A of collector current at 20V. Ideal for switching applications, it operates at temperatures up to 150°C in a small outline package.

Median Price

$0.266

Lifecycle Status

Suppliers In-Stock

24

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1k+

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Chip1Stop

Japan . 330 parts In-Stock

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Rochester

USA . 257,896 parts In-Stock

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Verical

USA . 250,000 parts In-Stock

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DigiKey

USA . 39,956 parts In-Stock

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Future Electronics

Canada . 2,000 parts In-Stock

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EBV Elektronik

Germany . 2,000 parts In-Stock

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Arrow

USA . 377 parts In-Stock

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$0.099

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$0.099

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Digiode

USA . 2,169 parts In-Stock

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$0.090

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TME

Poland . 4,000 parts In-Stock

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$0.480

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$0.480

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Chip Stock

USA . 113,000 parts In-Stock

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VNN

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Vyrian

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NAC Semi

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$0.950

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IBS Electronics

USA . 2,000 parts In-Stock

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$0.680

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$0.652

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$0.652

ComSIT Distribution GmbH

Germany . 1,675 parts In-Stock

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A&K Electronics

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Rotakorn

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Bristol Electronics

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LIBRA Elektronik GmbH

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Semi Source

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Anansix

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Nova Conductors

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Prism Electronics

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Semicontronic

India . 69,606 parts In-Stock

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$0.073

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$0.073

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Ampacity Inc.

Singapore . 63,307 parts In-Stock

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Corphita

USA . 3,548 parts In-Stock

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Component Stockers USA

USA . 125,015 parts In-Stock

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AZTECH Wire

Italy . 3,163 parts In-Stock

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Corohmni

South Africa . 547 parts In-Stock

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Advanced Electronics

New Zealand . 100 parts In-Stock

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Perfect Parts

USA . 77,291 parts In-Stock

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Continental Prestige Electronics

USA . 43,003 parts In-Stock

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Eastek

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GreenTree Electronics

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Authorized Procurement Solutions

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Argo Parts USA

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Aranea Global

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UNI Independent Distributors

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Supply Digital

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Overview

Enhance your electronic projects with the BC869,115 by NXP Semiconductors, a top-quality Small Signal Bipolar Junction Transistor. This PNP transistor is perfect for switching applications, offering reliable performance and versatility. With a minimum DC current gain of 60 and a maximum collector-emitter voltage of 20V, this transistor is a valuable addition to any project. Trust NXP Semiconductors for superior quality and innovation in electronics components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this transistor versatile for various circuit designs.

Configuration: SINGLE

Simplified circuit design with a single transistor, making it easier to implement.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Easy to mount on printed circuit boards, saving space and allowing for automated assembly.

Terminal Form: FLAT

Flat terminals provide a secure connection and ease of soldering during installation.

No. of Terminals: 3

Standard number of terminals for a bipolar junction transistor, suitable for most circuit applications.

Package Style (Meter): SMALL OUTLINE

Compact size for space-constrained applications while still providing necessary functionality.

Minimum DC Current Gain (hFE): 60

Moderate gain for efficient signal amplification and control in various circuits.

Maximum Operating Temperature: 150 °C

High temperature tolerance for reliable performance in a range of operating conditions.

Maximum Collector-Emitter Voltage: 20 V

Adequate voltage rating for many low-power applications, ensuring safety and reliability.

Transistor Element Material: SILICON

Silicon material provides superior performance and durability compared to other semiconductor materials.

Maximum Collector Current (IC): 1 A

Sufficient current rating for many small signal applications, enabling a wide range of circuit designs.

Terminal Finish: TIN

Tin finish provides corrosion resistance and good solderability for reliable electrical connections.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and installation.

Case Connection: COLLECTOR

Easy identification and connection to the collector terminal for proper circuit operation.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for efficient and reliable soldering during assembly, ensuring proper connections.

Peak Reflow Temperature °C: 260

High reflow temperature capability for lead-free soldering processes, meeting industry standards.

Nominal Transition Frequency (fT): 40 MHz

High frequency capability for fast signal switching and amplification, suitable for many applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC869,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

20 V

Configuration:

Minimum DC Current Gain (hFE):

60

JEDEC-95 Code:

TO-243AA

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC869,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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