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BC860BMTF

Onsemi

BC860BMTF by Onsemi

BC860BMTF by Onsemi is a PNP BJT transistor with VCEsat of 0.65V, hFE of 200, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and collector-emitter voltage of 45V. This small outline transistor in gull wing package shape is surface mountable with a transition frequency of 150MHz.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Rochester

USA . 7,950 parts In-Stock

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$0.040

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$0.033

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$0.029

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$0.040

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$0.029

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Nova Conductors

Japan . 88 parts In-Stock

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Digiode

USA . 1,692 parts In-Stock

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Vyrian

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Ashlea Components Ltd

UK . 7,599 parts In-Stock

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Bristol Electronics

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Atlantic Semiconductor

USA . 2,032 parts In-Stock

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J2 Sourcing AB

Sweden . 1,400 parts In-Stock

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VNN

France . 708 parts In-Stock

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Ampacity Inc.

Singapore . 7,769 parts In-Stock

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$0.025

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Corohmni

South Africa . 387 parts In-Stock

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Argo Parts USA

USA . 1,925 parts In-Stock

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Corphita

USA . 1,612 parts In-Stock

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Kepictronics

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Metaverse IC Inc.

Canada . 180,000 parts In-Stock

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RC Electronics

USA . 128,874 parts In-Stock

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Perfect Parts

USA . 56,635 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Continental Prestige Electronics

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Problanco Electronics

Mexico . 7,297 parts In-Stock

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Kulean Microsystems

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Glotronic Ltd.

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Microchip USA

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Netroflash

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Supply Digital

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TANS Electronics

Latvia . 1,650 parts In-Stock

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 145 parts In-Stock

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UHIMA Technologies

Türkiye . 35 parts In-Stock

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Overview

Discover the BC860BMTF by Onsemi, a top-of-the-line Small Signal Bipolar Junction Transistor designed for high-performance switching applications. Manufactured by Onsemi, known for their superior quality and innovation in electronic components, this PNP transistor offers unmatched reliability and efficiency. With a low VCEsat, high DC current gain, and small outline package style, the BC860BMTF delivers exceptional performance in a compact form. Trust Onsemi to provide cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the BC860BMTF and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring long-term reliability in various operating conditions.

Polarity or Channel Type: PNP

Suitable for use in circuits where PNP transistors are required for proper functionality.

Configuration: SINGLE

Simplified design and easy integration into circuits requiring a single transistor configuration.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Surface Mount: YES

Enables easy and efficient surface mounting onto PCBs, saving space and simplifying the assembly process.

Maximum VCEsat: 0.65 V

Low VCEsat value ensures minimal voltage drop across the transistor during operation, leading to improved efficiency.

Maximum Power Dissipation (Abs): 0.31 W

With a relatively high power dissipation capability, this transistor can handle moderate power levels without overheating.

Nominal Transition Frequency (fT): 150 MHz

High transition frequency enables fast switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC860BMTF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

6 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.65 V

Trade Compliance

BC860BMTF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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