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BC860CMTF

Onsemi

BC860CMTF by Onsemi

BC860CMTF by Onsemi is a PNP BJT transistor for switching applications. Features include VCEsat of 0.65V, hFE of 420, and IC of 0.1A. Ideal for small outline packages in high-temperature environments up to 150 °C.

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Digiode

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Native Components

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Northwest PG Solutions

USA . 887 parts In-Stock

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Kepictronics

USA . 306,000 parts In-Stock

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Metaverse IC Inc.

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SupplyDigital Components

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Problanco Electronics

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TANS Electronics

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Kulean Microsystems

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Supply Digital

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Corphita

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Overview

Elevate your electronic designs with the BC860CMTF from Onsemi, a trusted manufacturer known for delivering top-quality components. This Small Signal Bipolar Junction Transistor (BJT) offers reliable performance in switching applications, thanks to its PNP configuration and low VCEsat of just 0.65V. With a high DC current gain of 420 and a maximum operating temperature of 150 °C, this transistor ensures efficient power dissipation and optimal performance. Whether you're working on consumer electronics or industrial equipment, the BC860CMTF provides the value, benefits, and advantage you need to bring your projects to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-side switching applications, making this product versatile for different circuit designs.

Configuration: SINGLE

Single configuration simplifies circuit design and ensures ease of use and compatibility with other components.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient performance in switching operations.

Surface Mount: YES

Surface mount capability allows for easy integration onto printed circuit boards, saving space and reducing assembly time.

Maximum VCEsat: 0.65 V

Low maximum VCEsat value ensures minimal energy loss and high efficiency in switching operations.

Package Shape: RECTANGULAR

Rectangular package shape provides a compact form factor, ideal for applications where space is limited.

Terminal Form: GULL WING

Gull wing terminals offer secure mounting and easy soldering onto PCBs, ensuring reliable connections.

No. of Terminals: 3

Having 3 terminals allows for flexibility in circuit configurations and connections.

Maximum Power Dissipation (Abs): 0.31 W

With a maximum power dissipation of 0.31W, this transistor can handle moderate power levels without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and enables high-density circuit design.

Minimum DC Current Gain (hFE): 420

High minimum DC current gain ensures amplification of weak signals and stable transistor operation.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable performance in a wide range of temperature conditions.

Maximum Collector-Base Capacitance: 6 pF

Low maximum collector-base capacitance minimizes the risk of signal distortion and improves high-frequency performance.

Maximum Collector-Emitter Voltage: 45 V

A maximum collector-emitter voltage of 45V ensures safe operation in various circuit configurations.

Transistor Element Material: SILICON

Silicon material offers high reliability and performance, making the transistor suitable for various applications.

Maximum Collector Current (IC): 0.1 A

A maximum collector current of 0.1A allows for handling moderate current levels in switching applications.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit design and connections.

Nominal Transition Frequency (fT): 150 MHz

High nominal transition frequency enables high-speed switching and improves overall performance in RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC860CMTF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

6 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.65 V

Trade Compliance

BC860CMTF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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