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BC860B,215

NXP Semiconductors

BC860B,215 by NXP Semiconductors

BC860B,215 by NXP Semiconductors is a PNP BJT transistor with max VCEsat of 0.65V and hFE of 220. Ideal for amplifier applications, it has a max IC of 0.1A and operates up to 150°C. With a package style of small outline, it is surface mountable with GULL WING terminals.

Median Price

$0.032

Lifecycle Status

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18

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1k+

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Rochester

USA . 152,438 parts In-Stock

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$0.032

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$0.027

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$0.024

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Future Electronics

Canada . 108,000 parts In-Stock

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Verical

USA . 98,000 parts In-Stock

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EBV Elektronik

Germany . 57,000 parts In-Stock

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RS (Exports)

UK . 52,100 parts In-Stock

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$0.064

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Arrow

USA . 15,429 parts In-Stock

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Chip1Stop

Japan . 8,900 parts In-Stock

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$0.047

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$0.033

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$0.012

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$0.033

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Digiode

USA . 4,822 parts In-Stock

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TME

Poland . 1,603 parts In-Stock

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$0.140

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$0.055

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Chip Stock

USA . 143,000 parts In-Stock

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Schukat

Germany . 13,000 parts In-Stock

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NAC Semi

USA . 6,000 parts In-Stock

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IBS Electronics

USA . 3,000 parts In-Stock

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$0.097

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VNN

France . 2,632 parts In-Stock

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Vyrian

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LIBRA Elektronik GmbH

Germany . 2,040 parts In-Stock

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Anansix

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Nova Conductors

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Semicontronic

India . 110,706 parts In-Stock

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Ampacity Inc.

Singapore . 103,560 parts In-Stock

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Corphita

USA . 4,813 parts In-Stock

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Component Stockers USA

USA . 299,814 parts In-Stock

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Corohmni

South Africa . 178 parts In-Stock

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AZTECH Wire

Italy . 11,310 parts In-Stock

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Perfect Parts

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Continental Prestige Electronics

USA . 152,438 parts In-Stock

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Eastek

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Glotronic Ltd.

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UNI Independent Distributors

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Argo Parts USA

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Kepictronics

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GreenTree Electronics

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Metaverse IC Inc.

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Supply Digital

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Aranea Global

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Overview

Upgrade your electronic projects with the BC860B,215 from NXP Semiconductors. This high-quality Small Signal Bipolar Junction Transistor offers unparalleled performance in amplification applications, providing a maximum VCEsat of 0.65 V and a minimum DC Current Gain of 220. With a package shape of RECTANGULAR and surface mount capabilities, this PNP transistor is a versatile choice for your circuit design needs. Trust in NXP Semiconductors' expertise and experience in the semiconductor industry to deliver top-notch products like the BC860B,215 that offer maximum value and benefits to customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor easy to handle and long-lasting.

Polarity or Channel Type: PNP

PNP transistors are commonly used in amplifier circuits, making this transistor suitable for amplifier applications.

Configuration: SINGLE

Single configuration transistors are easy to integrate into circuits and provide consistent performance.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuitry.

Surface Mount: YES

Surface mount capability allows for easy PCB assembly and compact designs, perfect for space-constrained applications.

Maximum VCEsat: 0.65 V

Low VCEsat ensures minimal power loss and high efficiency in operation.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and soldering on PCBs, making installation straightforward.

No. of Terminals: 3

Having only 3 terminals simplifies circuit design and reduces complexity.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3 W, this transistor can handle moderate power levels efficiently.

Package Style (Meter): SMALL OUTLINE

The small outline package saves space on the PCB, allowing for more compact designs.

Minimum DC Current Gain (hFE): 220

A high minimum DC current gain ensures stable and reliable amplification in circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can handle high temperature environments.

Maximum Collector-Emitter Voltage: 45 V

45V maximum collector-emitter voltage provides versatility in circuit design and compatibility with various voltage levels.

Transistor Element Material: SILICON

Silicon is a commonly used material in transistors due to its high performance and reliability.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels.

Terminal Finish: TIN

Tin terminal finish provides corrosion resistance and reliable solder connections.

Terminal Position: DUAL

Dual terminal position allows for flexible PCB layout and easier connections in circuit designs.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum reflow time of 30 seconds, this transistor is easy to solder onto the PCB.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C ensures reliable solder connections during assembly.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency of 100 MHz allows for fast switching and amplification speeds.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC860B,215 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

220

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.65 V

Trade Compliance

BC860B,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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