Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STGD10NC60HDT4
STMicroelectronics
STGD10NC60HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 20A max collector current, and 62W max power dissipation. Ideal for power control applications, it features a built-in diode, 247ns turn-off time, and operates up to 150°C.
COLLECTOR
20 A
600 V
SINGLE WITH BUILT-IN DIODE
5.75 V
20 V
TO-252AA
R-PSSO-G2
e3
1
2
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
62 W
Not Qualified
Insulated Gate BIP Transistors
YES
MATTE TIN
GULL WING
SINGLE
30
POWER CONTROL
SILICON
247 ns
19 ns
STGD3NB60HDT4
STGD3NB60HDT4 from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 50W, and fast switching times (ton: 25ns, toff: 168ns). This compact device ensures efficient performance in demanding environments.
10 A
5 V
50 W
MOTOR CONTROL
168 ns
25 ns
STGB7NC60HDT4
STGB7NC60HDT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 25A collector current, and a fast turn-off time of 221ns. Ideal for high-performance switching in compact designs.
25 A
TO-263AB
245
80 W
Matte Tin (Sn) - annealed
221 ns
25.5 ns
STGF7NC60HD
STGF7NC60HD by STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max collector-emitter voltage of 600V, a turn-off time of 221ns, and operates at up to 150 °C. Its robust design ensures efficient performance in demanding environments.
ISOLATED
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
25 W
NO
THROUGH-HOLE
STGY40NC60VD
STMicroelectronics' STGY40NC60VD is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 260W Ptot. Ideal for POWER CONTROL applications, it features a single configuration with built-in diode and a turn-off time of 247ns. The package is RECTANGULAR in shape with THROUGH-HOLE terminals.
80 A
R-PSIP-T3
IN-LINE
260 W
Matte Tin (Sn)
61 ns
IHP10T120
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 138 W; Maximum Collector Current (IC): 16 A; Nominal Turn Off Time (toff): 769 ns;
16 A
1200 V
6.5 V
138 W
769 ns
69 ns
IXGH40N60B2D1
IXYS Corporation
IXGH40N60B2D1 by IXYS Corp is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 75A max collector current, and 38ns turn on time. Ideal for power control applications due to its single configuration with built-in diode and plastic/epoxy package body material.
75 A
TO-247AD
NOT SPECIFIED
390 ns
38 ns
IXGN60N60C2D1
IXYS Corporation's IXGN60N60C2D1 is an N-CHANNEL IGBT with VCEsat of 2.5V, IC of 75A, and Pmax of 480W. Ideal for power control applications due to its fast turn-off time (toff) of 210ns and high operating temperature up to 150°C. The device features a built-in diode, UL recognized, and is flange mountable for efficient heat dissipation.
LOW CONDUCTION LOSS
R-PUFM-X4
4
480 W
UL RECOGNIZED
NICKEL
UNSPECIFIED
UPPER
210 ns
43 ns
2.5 V
IXGR32N170AH1
IXGR32N170AH1 by IXYS Corp is an N-CHANNEL IGBT with 1700V VCE, 26A IC, and 107ns ton. Ideal for power control applications, it features a built-in diode, isolated case connection, and UL recognition.
26 A
1700 V
e1
TIN SILVER COPPER
370 ns
107 ns
IXGT16N170AH1
IXGT16N170AH1 by IXYS Corp is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 16A max collector current, and 190W max power dissipation. Ideal for motor control applications due to its fast turn-off time of 330ns and built-in diode configuration.
150 ns
TO-268AA
190 W
10
330 ns
97 ns
STGF14NC60KD
STGF14NC60KD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 11A max collector current, and 25W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 340ns.
ULTRA FAST
11 A
7 V
340 ns
31.5 ns
STGB6NC60HDT4
STGB6NC60HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 15A max collector current, and 56W max power dissipation. Ideal for power control applications due to its fast turn-off time of 222ns and built-in diode configuration. Suitable for surface mount with a small outline package style.
15 A
56 W
222 ns
17.3 ns
STGW39NC60VD
STGW39NC60VD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 70A max collector current, and 250W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 366ns.
70 A
TO-247AC
250 W
TIN
366 ns
46 ns
FD200R65KF2-K
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3800 W; Maximum Collector Current (IC): 1000 A; Maximum VCEsat: 4.9 V;
1000 A
6300 V
R-XUFM-X7
7
175 Cel
3800 W
6500 ns
1120 ns
4.9 V
STGW40N120KD
STGW40N120KD by STMicroelectronics is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 80A max collector current, and 240W max power dissipation. Ideal for motor control applications due to its built-in diode and fast turn-off time of 564ns. Package style is flange mount with through-hole terminals.
25 V
TO-247
125 Cel
240 W
564 ns
83 ns
IKD04N60R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 8 A; Peak Reflow Temperature (C): 260;
8 A
5.7 V
TO-252
75 W
342 ns
20 ns
STGW35NB60SD
STGW35NB60SD from STMicroelectronics is a powerful N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600 V, 70 A collector current, and a turn-off time of just 3600 ns. This robust device operates efficiently up to 150 °C.
TO-247AA
200 W
3600 ns
153 ns
MGD623S
Sanken Electric
The Sanken Electric MGD623S is an N-CHANNEL IGBT transistor with a max voltage of 600V and current of 50A. It has a turn-off time of 420ns and turn-on time of 175ns, making it ideal for power control applications. The package style is flange mount with a plastic/epoxy body material.
50 A
420 ns
175 ns
STGF19NC60HD
STGF19NC60HD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, a turn-off time of 272ns, and handles up to 16A current. Ideal for applications in industrial motor drives and power converters.
35 W
272 ns
32 ns
FGH60N60SMD-F085
Onsemi
FGH60N60SMD-F085 by Onsemi is an N-CHANNEL IGBT with 600V VCE, 120A IC, and 600W Ptot. Ideal for power control applications due to its fast tr of 60ns and tf of 20ns. Its single configuration with built-in diode makes it suitable for high-power switching needs.
120 A
6 V
TO-247AB
600 W
AEC-Q101
60 ns
139 ns
66 ns
FGH60T65SHD-F155
FGH60T65SHD-F155 by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.1V and IC of 120A, ideal for POWER CONTROL applications. It has a toff of 165ns, ton of 85ns, and can operate at temperatures ranging from -55°C to 175°C.
RC-IGBT
650 V
7.5 V
-55 Cel
349 W
165 ns
85 ns
2.1 V
RGS30TSX2DGC11
ROHM
ROHM's RGS30TSX2DGC11 is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 30A, and VGE(th) of 7V. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 189ns and turn-on time (ton) of 39ns. Operates in temperatures ranging from -40°C to 175°C.
30 A
30 V
-40 Cel
189 ns
39 ns
AFGHL75T65SQDC
AFGHL75T65SQDC by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and a max collector-emitter voltage of 650V. It is designed for power control applications, featuring a nominal turn-off time of 196.4ns and a max power dissipation of 375W. Ideal for high-power electronic systems requiring efficient switching capabilities.
6.4 V
375 W
196.4 ns
73.6 ns
STGSB200M65DF2AG
STGSB200M65DF2AG from STMicroelectronics is a high-performance N-channel IGBT designed for power control applications. It features a max VCEsat of 2.05V, supports up to 216A collector current, and operates in temperatures from -55 °C to 175 °C. Its compact surface mount design ensures efficient thermal management and reliability.
216 A
R-PDSO-G9
9
714 W
AEC-Q101; UL RECOGNIZED
DUAL
412.6 ns
193.6 ns
2.05 V
AOTF15B65M2
Alpha & Omega Semiconductor
AOTF15B65M2 by Alpha & Omega Semiconductor is an N-CHANNEL IGBT with VCEsat of 2.15V, IC of 30A, and toff of 108ns. Ideal for power control applications due to its single configuration with built-in diode and max operating temperature of 150°C.
36 W
108 ns
33 ns
2.15 V
AFGHL25T120RHD
AFGHL25T120RHD by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.4V and IC of 48A, ideal for POWER CONTROL applications. It has a max VCE of 1200V, operating temperature range from -55 to 175 °C, and turn-off time of 219ns. The package style is FLANGE MOUNT with a RECTANGULAR shape and THROUGH-HOLE terminals.
48 A
7.3 V
261 W
219 ns
2.4 V
AFGHL40T120RHD
AFGHL40T120RHD by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.4V and IC of 48A, ideal for POWER CONTROL applications. It has a max VCE of 1200V, operating temperature range from -55 to 175 °C, and turn-off time of 230ns. The package style is FLANGE MOUNT with through-hole terminals in a RECTANGULAR shape.
400 W
230 ns
AFGHL40T120RLD
AFGHL40T120RLD by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 48A IC, and 529W power dissipation. Ideal for power control applications due to its single configuration with built-in diode. Operates b/w -55 °C to 175°C temperature range.
529 W
276 ns
80 ns
AFGHL30T65RQDN
AFGHL30T65RQDN by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.82V and a max IC of 42A. It is designed for power control applications, featuring a single configuration with built-in diode. With a max operating temperature of 175 °C, it offers high power dissipation up to 230.8W in a rectangular package style suitable for flange mount installations.
42 A
6.3 V
230.8 W
48 ns
1.82 V
AFGHL25T120RLD
AFGHL25T120RLD by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 48A IC, and 400W Pd. Ideal for power control applications, it features a single configuration with built-in diode and operates b/w -55 to 175 °C.
7.1 V
205 ns
43.2 ns
2 V
FGHL75T65LQDT
FGHL75T65LQDT by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.35V and IC of 80A, ideal for POWER CONTROL applications. It features a package style of FLANGE MOUNT, operating temperature range from -55 to 175°C, and a turn-off time of 696ns.
469 W
696 ns
88 ns
1.35 V
FGH4L50T65SQD
FGH4L50T65SQD by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and a max IC of 80A. It is designed for power control applications, featuring a nominal toff of 169.6ns and ton of 44.8ns, operating at temperatures ranging from -55°C to 175°C.
R-PSFM-T4
268 W
169.6 ns
44.8 ns
IKWH30N65WR5XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Maximum Collector Current (IC): 75 A; Maximum Collector-Emitter Voltage: 650 V;
4.8 V
416 ns
1.7 V
NGTB25N120SWG
NGTB25N120SWG by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.4V, IC of 50A, and Ptot of 385W. Ideal for power control applications due to its built-in diode and fast turn-off time (toff) of 430ns. Operates in temperatures ranging from -55 °C to 175°C, making it suitable for various industrial uses.
385 W
430 ns
178 ns
NGTB40N120SWG
The Onsemi NGTB40N120SWG is an N-CHANNEL IGBT with VCEsat of 2.4V and IC of 80A, ideal for POWER CONTROL applications. It has a max VCE of 1200V, turn-off time of 564ns, and power dissipation of 535W. The transistor operates b/w -55 to 175 °C and features a built-in diode in a RECTANGULAR package with THROUGH-HOLE terminals.
535 W
154 ns
NGTB45N60S2WG
NGTB45N60S2WG by Onsemi is an N-CHANNEL IGBT with a Max VCEsat of 2.3V and Max IC of 90A. Ideal for POWER CONTROL applications, it has a Max VCE of 600V and can operate in temperatures ranging from -55 to 175 °C.
90 A
300 W
Tin (Sn)
232 ns
2.3 V
NGTB50N60S1WG
NGTB50N60S1WG by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2V and a max IC of 100A. It is used for power control applications, featuring a built-in diode and operating temperature range from -55 to 175 °C.
100 A
417 W
341 ns
NGTB75N60SWG
NGTB75N60SWG by Onsemi is an N-CHANNEL IGBT with VCEsat of 2V, IC of 100A, and Pdiss of 595W. Ideal for power control applications due to its single configuration with built-in diode. Operates b/w -55 °C to 175°C temperature range in a rectangular package style.
595 W
380 ns
NGTB03N60R2DT4G
NGTB03N60R2DT4G by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 9A, ideal for power control applications. It features a built-in diode, small outline package style, and can operate at temperatures up to 175°C. This transistor has a turn-off time of 105ns and is designed for surface mount assembly with gull wing terminals.
9 A
49 W
105 ns
134 ns
STGW15M120DF3
STGW15M120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.3V, supports up to 1200V collector-emitter voltage, and has a max power dissipation of 259W. Ideal for high-performance switching in industrial systems.
259 W
406 ns
STGWA15M120DF3
STGWA15M120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.3V, supports up to 1200V collector-emitter voltage, and has a max power dissipation of 259W. Ideal for high-performance switching in industrial systems.
BSM300GA120DLCHOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 570 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; JESD-30 Code: R-XUFM-X5;
570 A
R-XUFM-X5
5
650 ns
190 ns
IKA06N60TXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 10 A; Transistor Application: POWER CONTROL; Nominal Turn On Time (ton): 17 ns;
HIGH SPEED
249 ns
17 ns
IKA15N60TXKSA1
IKA15N60TXKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 600V and current of 14.7A. It features a built-in diode, turn-off time of 291ns, and turn-on time of 32ns. Ideal for power control applications due to its single configuration and isolated case connection in a rectangular package style.
HIGH SWITCHING SPEED
14.7 A
291 ns
NGTB15N120IHWG
NGTB15N120IHWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 30A IC, and 385ns toff. It is used for power control applications due to its single configuration with built-in diode. The transistor's package style is flange mount with a plastic/epoxy body material.
385 ns
STGW15S120DF3
STGW15S120DF3 IGBT from STMicroelectronics features a max VCEsat of 2.05V and supports power control applications with a collector current of up to 30A. It operates efficiently in temperatures ranging from -55 °C to 175 °C. This single-channel device is ideal for high-power switching tasks.
584 ns
31.2 ns
STGW25S120DF3
STGW25S120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.1V, supports up to 375W power dissipation, and operates at temperatures from -55 °C to 175 °C. Ideal for high-voltage systems with a max collector-emitter voltage of 1200V.
593 ns
STGW40S120DF3
STGW40S120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 1200 V, a collector current of 80 A, and fast switching times (ton: 50 ns, toff: 158.46 ns). Ideal for industrial and automotive uses, it comes in a flange mount package with through-hole terminals.
158.46 ns
50 ns
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