Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
IKY50N120CH3XKSA1
Infineon Technologies
IKY50N120CH3XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and current of 100A. It has a turn-off time of 462ns and turn-on time of 62ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals for easy installation.
100 A
1200 V
SINGLE WITH BUILT-IN DIODE
R-PSFM-T4
e3
1
4
-40 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
NO
TIN
THROUGH-HOLE
SINGLE
POWER CONTROL
SILICON
462 ns
62 ns
IKW50N60TAFKSA1
IKW50N60TAFKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 396ns toff. Ideal for power control applications, it features a built-in diode, AEC-Q101 compliance, and through-hole terminals in a rectangular package.
COLLECTOR
80 A
600 V
TO-247
R-PSFM-T3
3
NOT SPECIFIED
AEC-Q101
396 ns
60 ns
IKW50N65F5AXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 80 A; JEDEC-95 Code: TO-247;
650 V
4.8 V
20 V
175 Cel
270 W
196 ns
35 ns
2.1 V
IKW50N65H5AXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 80 A; Case Connection: COLLECTOR; Nominal Turn On Time (ton): 33 ns;
213 ns
33 ns
IKA08N65ET6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 11 A; Package Body Material: PLASTIC/EPOXY; JESD-609 Code: e3;
ISOLATED
11 A
TO-220AB
147 ns
30 ns
IKZ50N65NH5XKSA1
IKZ50N65NH5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 650V VCE, 85A IC, and 30ns ton. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
85 A
313 ns
IKA15N65ET6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 17 A; Package Shape: RECTANGULAR; JESD-30 Code: R-PSFM-T3;
17 A
202 ns
50 ns
IKA15N65ET6XKSA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 17 A; Maximum Collector-Emitter Voltage: 650 V; Package Shape: RECTANGULAR;
IKQ40N120CH3XKSA1
IKQ40N120CH3XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 80A. It is designed for power control applications and has a nominal turn-off time of 444ns.
444 ns
76 ns
IKY40N120CH3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 80 A; JEDEC-95 Code: TO-247; Nominal Turn Off Time (toff): 439 ns;
439 ns
61 ns
IKY75N120CH3XKSA1
IKY75N120CH3XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 150A max collector current. Ideal for power control applications, it has a single configuration with built-in diode and offers fast turn-off time of 468ns.
150 A
468 ns
73 ns
IKZ75N65ES5XKSA1
IKZ75N65ES5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 475ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. The PLASTIC/EPOXY package and THROUGH-HOLE terminals make it suitable for various industrial uses.
475 ns
70 ns
AUIRGPS4070D0
AUIRGPS4070D0 by Infineon Technologies is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 195A max collector current, and 150ns turn on time. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package suitable for flange mount installations.
195 A
TO-247AA
-55 Cel
285 ns
150 ns
STGW60H65DFB-4
STMicroelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 375 W; Maximum Collector Current (IC): 80 A; Transistor Application: POWER CONTROL;
7 V
375 W
329 ns
91 ns
2 V
IKD06N60RAATMA1
IKD06N60RAATMA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 12A max collector current. It has a turn-off time of 335ns and turn-on time of 22ns, suitable for applications requiring fast switching such as motor drives and power supplies.
LOW CONDUCTION LOSS
12 A
TO-252
R-PSSO-G2
2
SMALL OUTLINE
YES
GULL WING
GENERAL PURPOSE
335 ns
22 ns
FGY100T65SCDT
Onsemi
FGY100T65SCDT by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.9V and a max IC of 200A. Ideal for GENERAL PURPOSE SWITCHING applications, it has a max operating temperature of 175 °C and a nominal turn off time of 410ns.
FAST SWITCHING
200 A
6.9 V
25 V
750 W
MATTE TIN
GENERAL PURPOSE SWITCHING
410 ns
240 ns
1.9 V
FGH40T100SMD-F155
FGH40T100SMD-F155 by Onsemi is an N-CHANNEL IGBT with 1000V VCEsat, 80A IC, and 333W power dissipation. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package suitable for flange mount installations.
1000 V
6.5 V
TO-247AB
333 W
64 ns
397 ns
305 ns
100 ns
2.3 V
NGTB40N65IHRTG
NGTB40N65IHRTG by Onsemi is an N-CHANNEL IGBT with VCEsat of 1.7V, IC of 80A, and toff of 316ns. Ideal for POWER CONTROL applications due to its high power dissipation of 405W and max VCE of 650V. The package style is FLANGE MOUNT with a COLLECTOR case connection.
405 W
316 ns
1.7 V
AIKW40N65DH5XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 166 W; Maximum Collector Current (IC): 40 A; Maximum Operating Temperature: 175 Cel;
40 A
5.7 V
166 W
299 ns
36 ns
2.05 V
IKA10N65ET6XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 15 A; Package Shape: RECTANGULAR;
15 A
6.4 V
40 W
152 ns
48 ns
IKFW40N60DH3EXKSA1
IKFW40N60DH3EXKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 34A IC, and 2.7V VCEsat. Ideal for POWER CONTROL applications, it has a turn-off time of 184ns and operates b/w -40 to 175°C.
34 A
111 W
184 ns
2.7 V
IKFW50N60DH3EXKSA1
IKFW50N60DH3EXKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 40A IC, and 130W power dissipation. Ideal for power control applications, it features a built-in diode, 220ns turn-off time, and -40 to 175°C operating temperature range.
130 W
220 ns
58 ns
IKFW60N60DH3EXKSA1
IKFW60N60DH3EXKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.7V and a max collector current (IC) of 53A. It is commonly used for power control applications due to its high power dissipation of 141W and fast nominal turn on time (ton) of 60ns.
53 A
141 W
219 ns
NGTB40N65IHRWG
NGTB40N65IHRWG by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.7V and a max IC of 80A, ideal for power control applications. It has a package style of FLANGE MOUNT, can handle up to 650V and dissipate 405W, making it suitable for high-power operations in various industries.
TO-247AD
STGWA30H65DFB
STGWA30H65DFB from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2V, supports up to 60A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with built-in diode support.
60 A
260 W
223 ns
62.8 ns
AIHD04N60RATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 8 A; Reference Standard: AEC-Q101;
8 A
75 W
342 ns
20 ns
AIHD04N60RFATMA1
216 ns
18 ns
2.5 V
AIHD06N60RATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; JEDEC-95 Code: TO-252;
100 W
AIHD06N60RFATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; Minimum Operating Temperature: -40 Cel;
149 ns
17 ns
AIHD10N60RATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Package Body Material: PLASTIC/EPOXY;
20 A
150 W
428 ns
24 ns
AIHD10N60RFATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Minimum Operating Temperature: -40 Cel;
198 ns
27 ns
AIHD15N60RATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 30 A; No. of Elements: 1;
30 A
260
250 W
430 ns
26 ns
AIKQ100N60CTXKSA1
AIKQ100N60CTXKSA1 by Infineon is an N-CHANNEL IGBT with a VCEsat of 2V and IC of 160A. Ideal for power control applications, it has a toff of 393ns and ton of 83ns. With a max operating temperature of 175°C, it's designed for high-power dissipation up to 714W in automotive environments.
160 A
714 W
393 ns
83 ns
AIKQ120N60CTXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 833 W; Maximum Collector Current (IC): 160 A; Nominal Turn On Time (ton): 84 ns;
833 W
398 ns
84 ns
AIKW20N60CTXKSA1
Infineon's AIKW20N60CTXKSA1 is an N-CHANNEL IGBT with 600V VCEsat, 40A IC, and 2.05V VCE. Ideal for power control applications, it features a built-in diode and operates b/w -40 to 175°C.
AIKW30N60CTXKSA1
Infineon's AIKW30N60CTXKSA1 is an N-CHANNEL IGBT with VCEsat of 2.05V and IC of 60A, ideal for POWER CONTROL applications. It has a toff of 388ns, ton of 50ns, and can handle up to 187W power dissipation. Suitable for FLANGE MOUNT installations with a max temp rating of 175°C.
187 W
388 ns
AIKW50N60CTXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 333 W; Maximum Collector Current (IC): 80 A; Terminal Form: THROUGH-HOLE;
AIKW50N65DF5XKSA1
Infineon's AIKW50N65DF5XKSA1 is an N-CHANNEL IGBT with 650V VCEsat, 80A IC, and 270W power dissipation. Ideal for power control applications, it features a built-in diode, 196ns turn-off time, and operates b/w -40 to 175°C.
AIKW50N65DH5XKSA1
Infineon's AIKW50N65DH5XKSA1 is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 2.1V VCEsat. Ideal for POWER CONTROL applications, it features a built-in diode, 196ns toff, and 35ns ton for efficient switching in high-power systems. AEC-Q101 certified for automotive use.
AIHD03N60RFATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 53.6 W; Maximum Collector Current (IC): 6.5 A; Maximum VCEsat: 2.5 V;
6.5 A
53.6 W
265 ns
AIKW40N65DF5XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 74 A; Transistor Application: POWER CONTROL;
74 A
200 ns
IKFW50N60DH3XKSA1
IKFW50N60DH3XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 53A, and Pmax of 145W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 268ns and high operating temperature range (-40 to 175°C). Package style: FLANGE MOUNT, Terminal finish: TIN, Case connection: ISOLATED.
145 W
268 ns
IKFW60N60EH3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 164 W; Maximum Collector Current (IC): 64 A; Transistor Application: POWER CONTROL;
64 A
164 W
282 ns
63 ns
IKFW90N60EH3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 178 W; Maximum Collector Current (IC): 77 A; Nominal Turn On Time (ton): 76 ns;
77 A
178 W
312 ns
STGP8M120DF3
STGP8M120DF3 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max VCEsat of 2.3V, operates up to 175 °C, and supports 1200V with a collector current of 16A. Its compact design ensures efficient thermal management in various systems.
16 A
356 ns
28.8 ns
VS-GT100DA120UF
Vishay Intertechnology
VS-GT100DA120UF by Vishay Intertechnology is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 187A max collector current. Ideal for power control applications, it features a single configuration with built-in diode, 490ns turn off time, and 208ns turn on time. UL approved and designed in a rectangular package style for flange mount.
187 A
R-PUFM-X4
UL APPROVED
UNSPECIFIED
UPPER
490 ns
208 ns
VS-GT80DA120U
VS-GT80DA120U by Vishay Intertechnology is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 139A max collector current, and 658W max power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and operates in temperatures ranging from -40°C to 150°C.
139 A
150 Cel
658 W
UL RECOGNIZED
436 ns
199 ns
DGTD65T40S1PT
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 341 W; Maximum Collector Current (IC): 80 A; Terminal Position: SINGLE;
6 V
341 W
MIL-STD-202
112 ns
2.4 V
© 2023 All rights reserved
