Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STGDL6NC60DIT4
STMicroelectronics
STGDL6NC60DIT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 13A max collector current, and 50W max power dissipation. Ideal for power control applications due to its fast turn-off time of 122ns and built-in diode configuration.
13 A
600 V
SINGLE WITH BUILT-IN DIODE
5.75 V
20 V
TO-252
R-PSSO-G2
1
2
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
N-CHANNEL
50 W
Not Qualified
Insulated Gate BIP Transistors
YES
GULL WING
SINGLE
POWER CONTROL
SILICON
122 ns
10.5 ns
STGPL6NC60DI
STGPL6NC60DI by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 14A IC, and 56W Ptot. It features a built-in diode for power control applications. The transistor has a toff of 122ns and ton of 10.5ns, making it suitable for high-speed switching operations in various industrial systems.
14 A
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
56 W
NO
THROUGH-HOLE
IKD03N60RF
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 53.6 W; Maximum Collector Current (IC): 5 A; Maximum Collector-Emitter Voltage: 600 V;
COLLECTOR
5 A
5.7 V
e3
175 Cel
53.6 W
TIN
265 ns
18 ns
IKD04N60RF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 8 A; Terminal Form: GULL WING;
8 A
260
75 W
216 ns
STGW50H60DF
STGW50H60DF by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 100A max collector current. It has a built-in diode, 285ns turn-off time, and 360W power dissipation. Ideal for power control applications requiring high efficiency and reliability in a flange mount package.
100 A
TO-247
360 W
Matte Tin (Sn)
285 ns
91 ns
STGWA60NC60WDR
STGWA60NC60WDR by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 130A max collector current, and 340W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 343ns.
130 A
340 W
343 ns
69 ns
FD1200R17HP4-K_B2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 6500 W; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: R-PUFM-X7;
ISOLATED
1700 V
6.4 V
R-PUFM-X7
7
-40 Cel
6500 W
UL APPROVED
UNSPECIFIED
UPPER
1800 ns
900 ns
2.25 V
NGTB15N120IHLWG
Onsemi
NGTB15N120IHLWG by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max gate-emitter voltage of 20V. It has a nominal turn off time of 440ns, making it suitable for power control applications requiring high voltage handling and fast switching capabilities. The transistor's package style is flange mount with through-hole terminals, ideal for applications where efficient heat dissipation is crucial.
30 A
1200 V
6.5 V
156 W
440 ns
NGTB15N60S1EG
NGTB15N60S1EG by Onsemi is an N-CHANNEL IGBT with 650V VCE, 30A IC, and 117W Ptot. Ideal for MOTOR CONTROL applications due to its built-in diode, 440ns toff, and 93ns ton. Package: PLASTIC/EPOXY, Through-Hole terminals, Flange Mount style.
650 V
117 W
MATTE TIN
MOTOR CONTROL
93 ns
NGTB20N120IHLWG
NGTB20N120IHLWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 40A max collector current, and 485ns nominal turn off time. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package style suitable for flange mount installations.
40 A
192 W
485 ns
NGTB20N120LWG
NGTB20N120LWG by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 40A. It has a nominal turn-off time of 485ns and is ideal for motor control applications due to its single configuration with built-in diode. The transistor operates at a max temperature of 150 °C, making it suitable for high-power applications.
110 ns
NGTB25N120IHLWG
NGTB25N120IHLWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 50A IC, and 475ns toff. Ideal for power control applications due to its 192W Pdiss, FLANGE MOUNT package style, and built-in diode configuration.
50 A
475 ns
NGTB25N120LWG
NGTB25N120LWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 50A max collector current, and 192W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 475ns.
117 ns
STGW50HF60SD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 284 W; Maximum Collector Current (IC): 110 A; Maximum Gate-Emitter Voltage: 20 V;
110 A
284 W
950 ns
STGWA30N120KD
STGWA30N120KD by STMicroelectronics is an N-CHANNEL IGBT with 1200V VCE, 60A IC, and 220W Ptot. Ideal for MOTOR CONTROL applications due to its built-in diode and fast turn-off time of 756ns. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
60 A
25 V
125 Cel
220 W
756 ns
57 ns
STGWA40N120KD
STGWA40N120KD by STMicroelectronics is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 80A max collector current, and 240W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 564ns.
80 A
240 W
564 ns
83 ns
STGB30H60DF
STGB30H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.4V, IC of 60A, and Ptot of 260W. Ideal for power control applications, it operates b/w -40 to 175 °C with a VCEmax of 600V.
7 V
TO-263AB
260 W
234 ns
64 ns
2.4 V
NGTB30N120LWG
NGTB30N120LWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 60A max collector current, and 560W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 596ns.
560 W
596 ns
167 ns
NGTB40N120FLWG
NGTB40N120FLWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 80A max collector current, and 260W max power dissipation. Ideal for power control applications, it features a built-in diode, 630ns turn-off time, and operates up to 150°C.
630 ns
172 ns
NGTB40N120IHLWG
NGTB40N120IHLWG by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 80A. It has a nominal turn off time of 565ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals and can handle up to 260W of power dissipation.
565 ns
NGTB40N120LWG
NGTB40N120LWG by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 80A. It is designed for motor control applications, featuring a nominal turn-off time of 565ns and a max power dissipation of 260W. The transistor has a single configuration with built-in diode in a rectangular package style suitable for flange mount installations.
178 ns
NGTB40N60IHLWG
NGTB40N60IHLWG by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a single configuration with built-in diode, ideal for power control applications. Featuring a turn-off time of 230ns and turn-on time of 110ns, it comes in a rectangular package style with through-hole terminals.
230 ns
STGW60H65DF
STGW60H65DF by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 120A IC, and 360W Ptot. It is used for power control applications due to its fast turn-off time of 247ns and turn-on time of 113ns. The transistor comes in a rectangular package with through-hole terminals and built-in diode.
120 A
247 ns
113 ns
STGB20H60DF
STGB20H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 40A, and Ptot of 167W. Ideal for power control applications, it has a toff of 259ns and ton of 55.9ns. Suitable for surface mount with a max VCE of 600V and operating temperature range from -55 °C to +175°C.
-55 Cel
167 W
259 ns
55.9 ns
2 V
STGF30H60DF
STGF30H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.4V, IC of 60A, and Pmax of 37W. Ideal for power control applications due to its fast turn-off time (toff) of 234ns and high collector-emitter voltage rating of 600V. Package style: FLANGE MOUNT, suitable for isolated case connections in various industrial settings.
37 W
STGW25H120DF2
STGW25H120DF2 by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2.6V and a max collector-emitter voltage of 1200V. It is used for power control applications, with a nominal turn off time of 339ns.
375 W
339 ns
41 ns
2.6 V
IGW60T120FKSA1
Infineon's IGW60T120FKSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 100A max collector current. Ideal for power control applications, it features a single configuration with built-in diode and 730ns turn-off time. The package is rectangular in shape with through-hole terminals.
TO-247AD
730 ns
95 ns
STGW30H60DF
STGW30H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.4V and IC of 60A. Ideal for POWER CONTROL applications, it has a max VCE of 600V and can dissipate up to 260W at temperatures ranging from -40 to 175 °C.
STGW60H60DLFB
STGW60H60DLFB by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 375W Pd. It is used for POWER CONTROL applications due to its low VCEsat of 2V and fast turn-on time of 301ns. The device operates in a temperature range from -55 °C to 175°C and comes in a FLANGE MOUNT package style.
301 ns
STGWT40V60DF
STGWT40V60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 80A, and Pmax of 283W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 241ns and high operating temperature range (-55 to 175 °C).
283 W
241 ns
73 ns
2.3 V
STGWT60H60DLFB
STGWT60H60DLFB by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 80A IC, and 375W power dissipation. Ideal for power control applications due to its single configuration with built-in diode and flange mount package style. Operating temperature ranges from -55 °C to 175°C.
VS-GB90DA120U
Vishay Intertechnology
VS-GB90DA120U by Vishay Intertechnology is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 149A max collector current, and 862W max power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and operates in temperatures ranging from -40 to 150 °C.
149 A
6 V
R-PUFM-X4
4
862 W
UL RECOGNIZED
NICKEL
420 ns
293 ns
STGP30V60DF
STGP30V60DF by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 60A max collector current, and 225ns turn-off time. It is used for power control applications due to its single configuration with built-in diode and flange mount package style.
225 ns
59 ns
BSM75GAR120DN2HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Body Material: UNSPECIFIED;
75 A
R-XUFM-X7
FZ400R12KE3B1HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 650 A; Terminal Position: UPPER; Package Style (Meter): FLANGE MOUNT;
650 A
R-XUFM-X5
5
830 ns
400 ns
BSM300GA170DLCHOSA1
Infineon's BSM300GA170DLCHOSA1 is an N-CHANNEL IGBT with 1700V max collector-emitter voltage and 600A max collector current. It features a single configuration with built-in diode, 930ns turn off time, and 200ns turn on time. Ideal for high-power applications requiring fast switching capabilities in isolated case connections.
600 A
930 ns
200 ns
BSM200GA170DLCHOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 400 A; Terminal Form: UNSPECIFIED; Terminal Position: UPPER;
400 A
FD300R12KE3HOSA1
Infineon's FD300R12KE3HOSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 480A max collector current, and 830ns turn off time. It is a single configuration with built-in diode, suitable for high-power applications like industrial motor drives and renewable energy systems.
480 A
DF200R12KE3HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 295 A; Case Connection: ISOLATED; Transistor Element Material: SILICON;
295 A
DF300R12KE3HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 480 A; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BSM75GAL120DN2HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 105 A; JESD-30 Code: R-XUFM-X7; Maximum Collector-Emitter Voltage: 1200 V;
105 A
520 ns
100 ns
BSM400GA170DLCHOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 800 A; JESD-30 Code: R-XUFM-X5; No. of Terminals: 5;
800 A
IHW20T120FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Qualification: Not Qualified; No. of Elements: 1;
TO-247AC
790 ns
82 ns
SKA06N60XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 9 A; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: SINGLE;
LOW CONDUCTION LOSS
9 A
318 ns
SKP06N60XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 12 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 600 V;
12 A
SKP02N120XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 6.2 A; Maximum Collector-Emitter Voltage: 1200 V; JESD-609 Code: e3;
6.2 A
375 ns
40 ns
IKP15N60TXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 30 A; JESD-30 Code: R-PSFM-T3; JEDEC-95 Code: TO-220AB;
HIGH SPEED
291 ns
32 ns
SKP04N60XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 9.4 A; Case Connection: COLLECTOR; Maximum Operating Temperature: 150 Cel;
9.4 A
368 ns
38 ns
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