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SINGLE WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 492

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGWA20IH65DF by STMicroelectronics

STGWA20IH65DF

STMicroelectronics

STGWA20IH65DF from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.05V, supports up to 650V collector-emitter voltage, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance switching in industrial systems.

COLLECTOR

40 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

159 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

230 ns

2.05 V

STGWA30IH65DF by STMicroelectronics

STGWA30IH65DF

STMicroelectronics

STGWA30IH65DF from STMicroelectronics is a robust N-channel IGBT designed for power control applications. It features a max VCEsat of 2.05V, supports up to 60A collector current, and operates efficiently b/w -55 °C to 175 °C. Ideal for high-power switching tasks in various electronic systems.

COLLECTOR

60 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

180 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

312 ns

2.05 V

STGW75H65DFB2-4 by STMicroelectronics

STGW75H65DFB2-4

STMicroelectronics

STGW75H65DFB2-4 by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 115A, and Pmax of 357W. Ideal for power control applications due to its fast turn-off time (toff) of 231ns and high collector-emitter voltage of 650V. Package style is flange mount with through-hole terminals.

COLLECTOR

115 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T4

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

357 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

231 ns

42 ns

2 V

STGW50H65DFB2-4 by STMicroelectronics

STGW50H65DFB2-4

STMicroelectronics

STGW50H65DFB2-4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2V, supports up to 86A collector current, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance applications in industrial and automotive sectors.

COLLECTOR

86 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T4

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

272 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

247 ns

34 ns

2 V

RGW80TS65CHRC11 by ROHM

RGW80TS65CHRC11

ROHM

ROHM RGW80TS65CHRC11 is an N-CHANNEL IGBT with VCEsat of 1.9V and IC of 81A, ideal for POWER CONTROL applications. It has a max VCE of 650V and turn-off time of 185ns, suitable for high-power systems. The transistor operates b/w -40 to 175°C, making it versatile in various environments.

81 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

30 V

TO-247

R-PSFM-T3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

214 W

AEC-Q101

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

185 ns

54 ns

1.9 V

AFGHL40T65RQDN by Onsemi

AFGHL40T65RQDN

Onsemi

AFGHL40T65RQDN by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 1.82V and a collector-emitter voltage of 650V. It is designed for power control applications, featuring a single configuration with built-in diode and a max power dissipation of 288W.

COLLECTOR

46 A

650 V

SINGLE WITH BUILT-IN DIODE

6.05 V

20 V

TO-247

R-PSFM-T3

e3

1

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

288 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

POWER CONTROL

SILICON

149 ns

74 ns

1.82 V

STGP20IH65DF by STMicroelectronics

STGP20IH65DF

STMicroelectronics

STGP20IH65DF by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max VCEsat of 2.05 V, supports up to 650 V collector-emitter voltage, and has a power dissipation of 159 W. Ideal for high-efficiency switching in industrial systems.

COLLECTOR

40 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

159 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

159 ns

2.05 V

VS-GT55LA120UX by Vishay Intertechnology

VS-GT55LA120UX

Vishay Intertechnology

VS-GT55LA120UX by Vishay Intertechnology is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 68A max collector current. Ideal for power control applications, it features a built-in diode, 260ns turn off time, and 291W max power dissipation.

ISOLATED

68 A

1200 V

SINGLE WITH BUILT-IN DIODE

7.6 V

20 V

R-PUFM-X4

1

4

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

291 W

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

260 ns

19 ns

VS-GT90DA120U by Vishay Intertechnology

VS-GT90DA120U

Vishay Intertechnology

VS-GT90DA120U by Vishay Intertechnology is an N-CHANNEL IGBT with 1200V VCEsat, 2.6V, and 169A IC. Ideal for POWER CONTROL applications, it features a single configuration with built-in diode and operates in temperatures ranging from -40 to 150 °C.

ISOLATED

169 A

1200 V

SINGLE WITH BUILT-IN DIODE

7.6 V

20 V

R-PUFM-X4

1

4

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

781 W

UL APPROVED

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

270 ns

61 ns

2.6 V

STGP30IH65DF by STMicroelectronics

STGP30IH65DF

STMicroelectronics

STGP30IH65DF by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.05V, supports up to 60A collector current, and operates in temperatures from -55 °C to 175 °C. Ideal for high-performance switching tasks.

COLLECTOR

60 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

30 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

180 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

233 ns

2.05 V

FGHL75T65LQDTL4 by Onsemi

FGHL75T65LQDTL4

Onsemi

FGHL75T65LQDTL4 by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 1.35V and a max IC of 80A. It is designed for power control applications, featuring a single configuration with built-in diode and a package style of flange mount.

80 A

650 V

SINGLE WITH BUILT-IN DIODE

6 V

20 V

TO-247

R-PSFM-T4

e3

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

469 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

660 ns

60 ns

1.35 V

STGYA75H120DF2 by STMicroelectronics

STGYA75H120DF2

STMicroelectronics

STMicroelectronics' STGYA75H120DF2 is an N-CHANNEL IGBT with 1200V VCE, 150A IC, and 750W Pmax. Ideal for POWER CONTROL applications due to its low VCEsat of 2.6V and fast turn-off time of 406ns. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.

COLLECTOR

150 A

1200 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

750 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

406 ns

95 ns

2.6 V