Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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IKW75N65EL5XKSA1
Infineon Technologies
IKW75N65EL5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 474ns toff. Ideal for POWER CONTROL applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. The transistor has a RECTANGULAR shape with THROUGH-HOLE terminals for FLANGE MOUNT installation.
80 A
650 V
SINGLE WITH BUILT-IN DIODE
TO-247
R-PSFM-T3
e3
1
3
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
NO
TIN
THROUGH-HOLE
SINGLE
POWER CONTROL
SILICON
474 ns
53 ns
IKZ50N65ES5XKSA1
IKZ50N65ES5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 366ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
R-PSFM-T4
4
366 ns
60 ns
IHW20N65R5XKSA1
IHW20N65R5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 650V and current of 40A. It has a turn-off time of 310ns and turn-on time of 38ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals, suitable for flange mount installations.
40 A
-40 Cel
NOT SPECIFIED
310 ns
38 ns
IHW30N65R5XKSA1
IHW30N65R5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 60A max collector current. It has a built-in diode, 258ns turn-off time, and 44ns turn-on time. Ideal for power control applications due to its single configuration and flange mount package style.
60 A
258 ns
44 ns
IHW50N65R5XKSA1
IHW50N65R5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 650V and a max collector current of 80A. It has a nominal turn-on time of 51ns and a turn-off time of 261ns, making it ideal for power control applications requiring fast switching speeds. The transistor comes in a rectangular package with through-hole terminals, suitable for flange mount installations in various industrial settings.
261 ns
51 ns
IKP20N65F5XKSA1
IKP20N65F5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 42A max collector current. It has a turn-off time of 211ns and turn-on time of 32ns, suitable for power control applications. The transistor comes in a rectangular package with through-hole terminals and built-in diode.
COLLECTOR
42 A
TO-220AB
211 ns
32 ns
IKP20N65H5XKSA1
IKP20N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 650V and a Max Collector Current of 42A. It has a Nominal Turn Off Time of 218ns and Nominal Turn On Time of 28ns, making it ideal for POWER CONTROL applications. The transistor comes in a RECTANGULAR package style with THROUGH-HOLE terminals and built-in diode configuration.
218 ns
28 ns
IKP30N65F5XKSA1
IKP30N65F5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 55A max collector current. Ideal for power control applications, it has a single configuration with built-in diode and a nominal turn-off time of 206ns.
55 A
206 ns
IKP30N65H5XKSA1
IKP30N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 650V max collector-emitter voltage, 55A max collector current, and 224ns turn-off time. Ideal for power control applications due to its single configuration with built-in diode and silicon transistor element material. Suitable for use in various systems requiring efficient power management.
224 ns
IKW30N65NL5XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 85 A; Package Style (Meter): FLANGE MOUNT; Package Body Material: PLASTIC/EPOXY;
85 A
514 ns
76 ns
IKW30N65ES5XKSA1
IKW30N65ES5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 62A max collector current. It has a single configuration with built-in diode, ideal for power control applications. Featuring a turn-off time of 204ns and turn-on time of 30ns, it operates in temperatures as low as -40°C.
62 A
204 ns
30 ns
IKW30N65WR5XKSA1
IKW30N65WR5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCE of 650V and IC of 60A. It has a toff of 429ns and ton of 49ns, making it ideal for POWER CONTROL applications. The transistor comes in a PLASTIC/EPOXY package style with THROUGH-HOLE terminals.
429 ns
49 ns
IKW40N65WR5XKSA1
IKW40N65WR5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 80A max collector current. It has a single configuration with built-in diode, ideal for power control applications. Featuring a turn-off time of 510ns and turn-on time of 63ns, it operates at temperatures as low as -40°C.
510 ns
63 ns
IKW50N65ES5XKSA1
Infineon IKW50N65ES5XKSA1 is an N-CHANNEL IGBT with VCEsat of 1.7V, IC of 80A, and Pmax of 274W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 198ns and high operating temperature range (-40 to 175°C). Package: PLASTIC/EPOXY, Shape: RECTANGULAR, Terminals: THROUGH-HOLE.
4.8 V
20 V
175 Cel
274 W
198 ns
45 ns
1.7 V
IKW50N65WR5XKSA1
IKW50N65WR5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 650V and collector current of 80A. It features a turn-off time of 507ns and turn-on time of 62ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and built-in diode.
507 ns
62 ns
IKQ100N60TXKSA1
IKQ100N60TXKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 160A. It is designed for power control applications and has a nominal turn-off time of 393ns.
160 A
600 V
393 ns
83 ns
IKW50N65EH5XKSA1
IKW50N65EH5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 80A max collector current. It features a single configuration with built-in diode, ideal for power control applications. With a turn-off time of 220ns and turn-on time of 54ns, it offers efficient performance in through-hole package style.
220 ns
54 ns
IKZ75N65EL5XKSA1
IKZ75N65EL5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 100A IC, and 536W power dissipation. Ideal for POWER CONTROL applications due to its low VCEsat of 1.35V and fast switching times (ton:133ns, toff:474ns). Package style is FLANGE MOUNT with THROUGH-HOLE terminals.
100 A
5.8 V
536 W
133 ns
1.35 V
IKD06N60RAATMA2
IKD06N60RAATMA2 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 12A max collector current. It has a turn-off time of 335ns and turn-on time of 22ns, making it suitable for applications requiring fast switching such as motor drives and power supplies. AEC-Q101 certified, it comes in a small outline package with gull wing terminals for surface mount assembly.
LOW CONDUCTION LOSS
12 A
TO-252
R-PSSO-G2
2
SMALL OUTLINE
AEC-Q101
YES
GULL WING
GENERAL PURPOSE
335 ns
22 ns
IKD06N60RFAATMA1
IKD06N60RFAATMA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.5V and a max collector-emitter voltage of 600V. It is used for power control applications and has a small outline package style, making it suitable for surface mount designs.
5.7 V
100 W
149 ns
17 ns
2.5 V
IKD10N60RAATMA2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; Transistor Application: GENERAL PURPOSE; Terminal Form: GULL WING;
20 A
428 ns
24 ns
IKD10N60RFAATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 20 A; Peak Reflow Temperature (C): NOT SPECIFIED;
150 W
27 ns
IGW40N65F5AXKSA1
IGW40N65F5AXKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 650V and current of 74A. It has a turn-off time of 200ns and turn-on time of 30ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals, suitable for flange mount installation.
74 A
200 ns
IKD03N60RFAATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 5 A; Terminal Position: SINGLE; Peak Reflow Temperature (C): NOT SPECIFIED;
5 A
265 ns
18 ns
IKD04N60RFAATMA1
IKD04N60RFAATMA1 by Infineon is an N-CHANNEL IGBT with 600V max. collector-emitter voltage and 8A max. collector current. It has a built-in diode, 216ns turn-off time, and is ideal for power control applications requiring fast switching speeds in automotive electronics (AEC-Q101 compliant).
8 A
216 ns
IKB20N60TAATMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 156 W; Maximum Collector Current (IC): 40 A; JEDEC-95 Code: TO-263AB;
TO-263AB
150 Cel
156 W
287 ns
35 ns
2.05 V
IKP20N60TAHKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 156 W; Maximum Collector Current (IC): 40 A; JEDEC-95 Code: TO-220AB;
IKW20N60TAFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Transistor Application: POWER CONTROL; Peak Reflow Temperature (C): NOT SPECIFIED;
299 ns
36 ns
IKW75N60TAFKSA1
IKW75N60TAFKSA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a single configuration with built-in diode, suitable for power control applications. The transistor features a nominal turn-off time of 401ns and nominal turn-on time of 69ns, meeting AEC-Q101 standards.
401 ns
69 ns
IKQ100N60TAXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 714 W; Maximum Collector Current (IC): 160 A; Maximum Collector-Emitter Voltage: 600 V;
714 W
2 V
IKQ120N60TAXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 833 W; Maximum Collector Current (IC): 160 A; JEDEC-95 Code: TO-247;
833 W
398 ns
84 ns
IKW30N60TAFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 60 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 600 V;
382 ns
50 ns
IKW40N65F5AXKSA1
IKW40N65F5AXKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 650V VCE, 74A IC, and 30ns ton. It is used for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE and AEC-Q101 reference standard compliance.
IKW40N65H5AXKSA1
IKW40N65H5AXKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 74A, and Pmax of 250W. Ideal for POWER CONTROL applications, it has a toff of 204ns and ton of 32ns. Operating b/w -40 to 175°C, it features a VCE(max) of 650V and VGE(th) of 4.8V.
250 W
2.1 V
IGZ75N65H5XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 119 A; Minimum Operating Temperature: -40 Cel; No. of Elements: 1;
119 A
415 ns
37 ns
IKZ75N65EH5XKSA1
Infineon IKZ75N65EH5XKSA1 is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 90A, and Ptot of 395W. Ideal for POWER CONTROL applications due to its fast ton of 37ns and low toff of 415ns. Operates in temperatures from -40°C to 175°C, making it suitable for various industrial power systems.
90 A
395 W
IKZ75N65NH5XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 90 A; Terminal Form: THROUGH-HOLE; Package Body Material: PLASTIC/EPOXY;
485 ns
71 ns
FZ400R12KS4PHOSA1
FZ400R12KS4PHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and current of 510A. It has a turn-off time of 590ns and turn-on time of 180ns, making it suitable for high-power applications like motor drives and renewable energy systems. The package style is flange mount with isolated case connection.
ISOLATED
510 A
1200 V
R-XUFM-X5
5
UNSPECIFIED
UPPER
590 ns
180 ns
FD200R12KE3PHOSA1
Infineon's FD200R12KE3PHOSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage. It has a single configuration with built-in diode, ideal for power control applications. Featuring 830ns turn off time and 400ns turn on time, this UL recognized transistor operates from -40°C and comes in a flange mount package style.
UL RECOGNIZED
830 ns
400 ns
IKW40N60DTPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 67 A; No. of Terminals: 3; Terminal Finish: TIN;
67 A
320 ns
IKW50N60DTPXKSA1
IKW50N60DTPXKSA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. Ideal for power control applications, it features a single configuration with built-in diode and a nominal turn-off time of 332ns. The transistor operates in temperatures as low as -40°C, making it suitable for various industrial uses.
332 ns
55 ns
IGW40N60TPXKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 67 A; No. of Elements: 1; Terminal Form: THROUGH-HOLE;
IHW20N135R5XKSA1
IHW20N135R5XKSA1 by Infineon is an N-CHANNEL IGBT with 1350V VCE, 40A IC, and 288W power dissipation. Ideal for power control applications, it features a built-in diode, 450ns turn-off time, and operates b/w -40 to 175°C.
1350 V
6.4 V
288 W
450 ns
1.85 V
IHW25N120E1XKSA1
IHW25N120E1XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and collector current of 50A. It has a turn off time of 1677ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals, suitable for flange mount installations.
50 A
1677 ns
IKQ75N120CT2XKSA1
IKQ75N120CT2XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with VCEsat of 2.15V and IC of 150A. Ideal for POWER CONTROL applications, it has a max VCE of 1200V and can operate b/w -40 to 175 °C.
150 A
6.5 V
938 W
372 ns
86 ns
2.15 V
IRG4PC50FD-EPBF
IRG4PC50FD-EPBF by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 600V and current of 70A. It has a turn-off time of 660ns and turn-on time of 86ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals for easy installation.
ULTRA FAST SOFT RECOVERY
70 A
TO-247AD
660 ns
IKQ40N120CT2XKSA1
IKQ40N120CT2XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 530ns toff. Ideal for power control applications due to its single configuration with built-in diode. Package style is flange mount with through-hole terminals.
530 ns
74 ns
IKQ50N120CH3XKSA1
IKQ50N120CH3XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 100A max collector current. Ideal for power control applications, it has a turn-off time of 466ns and turn-on time of 68ns. Package style is flange mount with through-hole terminals.
466 ns
68 ns
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