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IKQ40N120CT2XKSA1

Infineon Technologies

IKQ40N120CT2XKSA1 by Infineon Technologies

IKQ40N120CT2XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 530ns toff. Ideal for power control applications due to its single configuration with built-in diode. Package style is flange mount with through-hole terminals.

Median Price

$7.850

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 117 parts In-Stock

1+ parts

$7.850

100+ parts

$4.430

1k+ parts

$4.340

10k+ parts

-

117

$7.850

$4.430

$4.340

-

Chip1Stop

Japan . 170 parts In-Stock

1+ parts

$9.550

100+ parts

$6.620

1k+ parts

-

10k+ parts

-

170

$9.550

$6.620

-

-

Newark

USA . 217 parts In-Stock

1+ parts

$10.420

100+ parts

$6.460

1k+ parts

$6.070

10k+ parts

-

217

$10.420

$6.460

$6.070

-

Element14

Singapore . 117 parts In-Stock

1+ parts

$13.190

100+ parts

$7.450

1k+ parts

$7.110

10k+ parts

-

117

$13.190

$7.450

$7.110

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EBV Elektronik

Germany . 10,560 parts In-Stock

1+ parts

-

100+ parts

-

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10,560

-

-

-

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Rochester

USA . 1,708 parts In-Stock

1+ parts

-

100+ parts

$3.780

1k+ parts

$3.380

10k+ parts

$3.180

1,708

-

$3.780

$3.380

$3.180

DigiKey

USA . 1,708 parts In-Stock

1+ parts

-

100+ parts

$4.970

1k+ parts

-

10k+ parts

-

1,708

-

$4.970

-

-

Verical

USA . 1,708 parts In-Stock

1+ parts

-

100+ parts

$4.725

1k+ parts

$4.225

10k+ parts

$3.975

1,708

-

$4.725

$4.225

$3.975

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 327 parts In-Stock

1+ parts

$5.529

100+ parts

-

1k+ parts

-

10k+ parts

-

327

$5.529

-

-

-

TME

Poland . 235 parts In-Stock

1+ parts

$6.210

100+ parts

$4.750

1k+ parts

$4.580

10k+ parts

-

235

$6.210

$4.750

$4.580

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NAC Semi

USA . 8,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$12.450

10k+ parts

$11.320

8,400

-

-

$12.450

$11.320

Vyrian

USA . 5,580 parts In-Stock

1+ parts

-

100+ parts

-

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-

10k+ parts

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5,580

-

-

-

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Nova Conductors

Japan . 91 parts In-Stock

1+ parts

-

100+ parts

-

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91

-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 239 parts In-Stock

1+ parts

$1.236

100+ parts

-

1k+ parts

-

10k+ parts

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239

$1.236

-

-

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Ampacity Inc.

Singapore . 642 parts In-Stock

1+ parts

$4.950

100+ parts

-

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-

10k+ parts

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642

$4.950

-

-

-

Corphita

USA . 716 parts In-Stock

1+ parts

$5.238

100+ parts

-

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-

10k+ parts

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716

$5.238

-

-

-

Continental Prestige Electronics

USA . 281 parts In-Stock

1+ parts

$7.650

100+ parts

$4.840

1k+ parts

-

10k+ parts

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281

$7.650

$4.840

-

-

Modulus Dynamics

Lithuania . 7,915 parts In-Stock

1+ parts

$8.400

100+ parts

$8.064

1k+ parts

$7.728

10k+ parts

-

7,915

$8.400

$8.064

$7.728

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Corohmni

South Africa . 179 parts In-Stock

1+ parts

$8.400

100+ parts

-

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-

10k+ parts

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179

$8.400

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Semicontronic

India . 228 parts In-Stock

1+ parts

$10.770

100+ parts

$10.501

1k+ parts

$10.447

10k+ parts

-

228

$10.770

$10.501

$10.447

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Microchip USA

USA . 6,408 parts In-Stock

1+ parts

$16.464

100+ parts

-

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10k+ parts

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6,408

$16.464

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

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1,000

-

-

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Argo Parts USA

USA . 879 parts In-Stock

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879

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Perfect Parts

USA . 269 parts In-Stock

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269

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Aranea Global

USA . 50 parts In-Stock

1+ parts

-

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-

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50

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Overview

Unleash the power of high-quality technology with the IKQ40N120CT2XKSA1 by Infineon Technologies. This Insulated Gate Bipolar Transistor offers unparalleled performance in power control applications thanks to its N-CHANNEL configuration and built-in diode. With a maximum collector-emitter voltage of 1200V and a collector current of 80A, this transistor is designed to deliver optimal efficiency and reliability. Whether you're looking to enhance your industrial equipment or upgrade your renewable energy systems, the IKQ40N120CT2XKSA1 is the perfect choice for customers who demand nothing but the best.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

Offers efficient conduction of electric current, enhancing the overall performance of the device.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by incorporating a diode within the transistor package.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, providing reliable and stable operation in high-power systems.

Package Shape: RECTANGULAR

Facilitates ease of installation and integration into various electronic systems.

Terminal Form: THROUGH-HOLE

Ensures secure and stable connections with other components, reducing the risk of loose wiring or malfunction.

Nominal Turn Off Time (toff): 530 ns

Efficiently switches off the transistor within a short timeframe, improving overall performance and response time.

No. of Terminals: 3

Provides necessary connectivity for different circuit configurations, enhancing versatility and compatibility.

Package Style (Meter): FLANGE MOUNT

Enables easy mounting and secure attachment to other components or surfaces.

Maximum Collector-Emitter Voltage: 1200 V

Handles high voltage levels, making it suitable for power control applications that require a robust and reliable transistor.

Transistor Element Material: SILICON

Utilizes a common and reliable material for the transistor element, ensuring consistent performance and longevity.

Minimum Operating Temperature: -40 °C

Can operate effectively in low-temperature environments, offering flexibility and reliability in various conditions.

Maximum Collector Current (IC): 80 A

Capable of handling high current levels, making it suitable for power control applications that require a high-performance transistor.

Terminal Finish: TIN

Provides a corrosion-resistant finish for the terminals, ensuring long-term reliability and stable connections.

Terminal Position: SINGLE

Simplifies installation and connectivity by utilizing a single terminal position, reducing complexity in circuit design.

Nominal Turn On Time (ton): 74 ns

Switches on quickly with a short turn-on time, enhancing response time and overall efficiency of the device.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IKQ40N120CT2XKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

530 ns

Nominal Turn On Time (ton):

74 ns

Trade Compliance

IKQ40N120CT2XKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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