Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
IKP20N60H3XKSA1
Infineon Technologies
IKP20N60H3XKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 40A IC, and 31ns ton. Ideal for POWER CONTROL applications due to its fast switching speed and high collector current capacity. The PLASTIC/EPOXY package with THROUGH-HOLE terminals ensures easy installation in various systems.
40 A
600 V
SINGLE WITH BUILT-IN DIODE
TO-220AB
R-PSFM-T3
e3
1
3
175 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
Not Qualified
NO
TIN
THROUGH-HOLE
SINGLE
POWER CONTROL
SILICON
241 ns
31 ns
IKW30N60H3FKSA1
IKW30N60H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 60A. It is designed for power control applications, offering a nominal turn-off time of 262ns and a nominal turn-on time of 50ns.
60 A
TO-247
262 ns
50 ns
IKW50N60H3FKSA1
IKW50N60H3FKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 100A IC, and 297ns toff. Ideal for power control applications due to its single configuration with built-in diode. Operates at a max temperature of 175°C in a rectangular package style.
100 A
297 ns
54 ns
IHY20N135R3XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
1350 V
NOT SPECIFIED
505 ns
IHW20N135R3FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 310 W; Maximum Collector Current (IC): 40 A; Terminal Position: SINGLE;
6.4 V
25 V
310 W
Insulated Gate BIP Transistors
385 ns
IHW40N60RFKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 80 A; Package Style (Meter): FLANGE MOUNT; JEDEC-95 Code: TO-247AD;
80 A
TO-247AD
264 ns
IKW75N60H3FKSA1
IKW75N60H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 600V VCE, 80A IC. It is a single configuration transistor with built-in diode for power control applications. The package style is flange mount with plastic/epoxy body material and through-hole terminals.
COLLECTOR
IKU06N60RBKMA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 12 A; Terminal Form: THROUGH-HOLE;
12 A
5.7 V
20 V
TO-251
R-PSIP-T3
IN-LINE
100 W
335 ns
22 ns
IKW60N60H3FKSA1
IKW60N60H3FKSA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a turn-off time of 314ns and turn-on time of 64ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and built-in diode.
314 ns
64 ns
IGW60N60H3FKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 80 A; Transistor Element Material: SILICON; Case Connection: COLLECTOR;
IKB03N120H2ATMA1
Infineon's IKB03N120H2ATMA1 is an N-CHANNEL IGBT with 1200V VCE, 9.6A IC, and 403ns toff. Ideal for power control applications, it features a built-in diode in a small outline package for surface mount assembly.
HIGH SPEED
9.6 A
1200 V
R-PSSO-G3
150 Cel
SMALL OUTLINE
YES
GULL WING
403 ns
16.1 ns
IKA08N65F5XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 31.2 W; Maximum Collector Current (IC): 10.8 A; JESD-30 Code: R-PSFM-T3;
ISOLATED
10.8 A
650 V
4.8 V
-40 Cel
31.2 W
163 ns
15 ns
2.1 V
IKA08N65H5XKSA1
IKA08N65H5XKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 10.8A, and toff of 130ns. Ideal for POWER CONTROL applications due to its high power dissipation of 31.2W and max VCE of 650V. The transistor operates b/w -40°C to 175°C temperature range in a RECTANGULAR package style with THROUGH-HOLE terminals.
130 ns
16 ns
IKA15N65H5XKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 33.3 W; Maximum Collector Current (IC): 14 A; Package Style (Meter): FLANGE MOUNT;
14 A
33.3 W
196 ns
24 ns
IKP08N65H5XKSA1
IKP08N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 650V VCEsat, 18A IC, and 70W power dissipation. Ideal for POWER CONTROL applications due to its built-in diode, 130ns turn-off time, and -40 to 175°C operating temperature range.
18 A
70 W
IKP15N65H5XKSA1
IKP15N65H5XKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 30A, and Pmax of 105W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 196ns and high operating temperature up to 175°C. Package style is FLANGE MOUNT with COLLECTOR connection.
30 A
105 W
IKW40N65F5FKSA1
IKW40N65F5FKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 74A, and Pmax of 250W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 200ns and high operating temperature range (-40 to 175°C). Package style: FLANGE MOUNT.
74 A
250 W
200 ns
34 ns
IKW40N65H5FKSA1
IKW40N65H5FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max VCEsat of 2.1V and a max IC of 74A. It is designed for power control applications, featuring a package style of FLANGE MOUNT and a max operating temperature of 175°C.
217 ns
32 ns
IKW50N65H5FKSA1
IKW50N65H5FKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V and IC of 80A. Ideal for POWER CONTROL applications, it has a toff of 231ns and can handle up to 305W power dissipation.
305 W
231 ns
35 ns
IHW15N120R3FKSA1
IHW15N120R3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 30A. It has a nominal turn off time of 460ns, making it ideal for power control applications requiring high voltage and current handling capabilities. The transistor's single configuration with built-in diode and through-hole terminal form provide ease of use in various power control systems.
460 ns
IHW20N120R3FKSA1
IHW20N120R3FKSA1 by Infineon is an N-CHANNEL IGBT with a max voltage of 1200V and current of 40A. It has a turn off time of 538ns, making it ideal for power control applications. The transistor comes in a rectangular package with through-hole terminals and operates at temperatures up to 175°C.
538 ns
IHW30N110R3FKSA1
IHW30N110R3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1100V and a max collector current of 60A. It has a nominal turn off time of 470ns, making it suitable for power control applications requiring high voltage and current handling capabilities. The package style is flange mount with through-hole terminals, ideal for power electronics designs where efficient heat dissipation is crucial.
1100 V
333 W
470 ns
FZ400R12KE4HOSA1
FZ400R12KE4HOSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage. It has a single configuration with built-in diode, ideal for power control applications. Featuring 810ns turn off time and 370ns turn on time, it operates at up to 150°C temperature in a rectangular package style.
R-XUFM-X3
UNSPECIFIED
UPPER
810 ns
370 ns
FZ400R12KP4HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Turn Off Time (toff): 840 ns; No. of Elements: 1; Package Shape: RECTANGULAR;
840 ns
315 ns
FZ400R17KE3HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 780 A; Qualification: Not Qualified; Package Body Material: UNSPECIFIED;
780 A
1700 V
R-XUFM-X4
4
1230 ns
400 ns
FZ400R17KE4HOSA1
FZ400R17KE4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1700V and current of 550A. It has a turn on time of 355ns and turn off time of 930ns, making it ideal for power control applications. The transistor comes in a rectangular package style with built-in diode, suitable for flange mount installations at temperatures up to 150°C.
550 A
930 ns
355 ns
FZ600R12KE3HOSA1
FZ600R12KE3HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 900A max collector current, and 830ns turn off time. It is used for power control applications due to its single configuration with built-in diode and silicon transistor element material.
900 A
830 ns
FZ600R12KE4HOSA1
FZ600R12KE4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 600A. It features a single configuration with built-in diode, ideal for power control applications. This rectangular package has a nominal turn-off time of 810ns and operates at temperatures up to 150°C.
600 A
FZ600R12KP4HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 2400 A; Package Shape: RECTANGULAR; Terminal Position: UPPER;
2400 A
FZ600R12KS4HOSA1
FZ600R12KS4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 1200V and a Nominal Turn Off Time of 590ns. It features a SINGLE configuration with BUILT-IN DIODE, suitable for high-power applications like industrial motor drives and renewable energy systems.
700 A
R-XUFM-X5
5
590 ns
180 ns
FZ600R17KE3HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 840 A; Maximum Collector-Emitter Voltage: 1700 V; Transistor Application: POWER CONTROL;
840 A
1200 ns
FZ600R17KE4HOSA1
FZ600R17KE4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1700V and a max collector current of 840A. It has a nominal turn-off time of 930ns and a turn-on time of 355ns, making it ideal for power control applications requiring high efficiency and fast switching capabilities. The transistor's single configuration with built-in diode and isolated case connection in a rectangular package shape ensure reliable performance in demanding environments.
FZ800R12KE3HOSA1
FZ800R12KE3HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and current of 1200A. It has a turn on time of 440ns and turn off time of 1000ns, making it ideal for power control applications requiring high efficiency and performance in a flange mount package.
1200 A
1000 ns
440 ns
FZ900R12KE4HOSA1
FZ900R12KE4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V. It has a turn off time of 810ns and turn on time of 370ns, making it ideal for power control applications. The transistor comes in a rectangular package style with built-in diode, suitable for flange mount installations at temperatures up to 150°C.
FZ900R12KP4HOSA1
FZ900R12KP4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V. It has a nominal turn off time of 840ns and turn on time of 370ns, making it ideal for power control applications. This single transistor with built-in diode comes in a rectangular package style with flange mount for easy installation.
FD400R12KE3HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 580 A; Case Connection: ISOLATED; Peak Reflow Temperature (C): NOT SPECIFIED;
580 A
FZ300R12KE3GHOSA1
FZ300R12KE3GHOSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 480A IC, and 830ns toff. Ideal for high-power applications like industrial motor drives due to its fast switching times and high current handling capabilities.
480 A
FZ400R12KS4HOSA1
FZ400R12KS4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V and current of 510A. Featuring a turn-off time of 590ns and turn-on time of 180ns, it is ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems.
510 A
DF150R12RT4HOSA1
DF150R12RT4HOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max voltage of 1200V. It has a turn on time of 185ns and turn off time of 490ns, making it ideal for power control applications. The transistor comes in a rectangular package style with flange mount and operates at temperatures up to 175°C.
490 ns
185 ns
DF400R12KE3HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 580 A; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
FD150R12RT4HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: UPPER; Nominal Turn On Time (ton): 185 ns; Maximum Operating Temperature: 175 Cel;
FD200R12KE3HOSA1
Infineon's FD200R12KE3HOSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 295A max collector current. It has a single configuration with built-in diode, 830ns turn off time, and 400ns turn on time. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems.
295 A
FD300R06KE3HOSA1
Infineon's FD300R06KE3HOSA1 is an N-CHANNEL IGBT with 600V max. collector-emitter voltage, 400A max. collector current, and 190ns nominal turn on time. Ideal for applications requiring high power switching such as motor drives, renewable energy systems, and industrial automation due to its single configuration with built-in diode and isolated case connection.
400 A
R-XUFM-X7
7
600 ns
190 ns
FD300R12KS4HOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 370 A; Nominal Turn Off Time (toff): 590 ns; No. of Terminals: 5;
370 A
UL APPROVED
STGWT60V60DF
STMicroelectronics
STGWT60V60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 80A, and Pmax of 375W. Ideal for power control applications due to its fast turn-off time (toff) of 243ns and high operating temperature range (-55 to 175 °C).
7 V
-55 Cel
375 W
243 ns
80 ns
2.3 V
FGH15T120SMD_F155
Fairchild Semiconductor
Fairchild Semiconductor's FGH15T120SMD_F155 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 30A max collector current, and 333W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 534ns.
7.5 V
TO-247AB
MATTE TIN
534 ns
74 ns
STGFW20V60F
STGFW20V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 40A max collector current. It has a single configuration with built-in diode, suitable for power control applications. The transistor offers fast switching times of 49ns turn-on and 173ns turn-off, making it ideal for high-speed operations.
173 ns
49 ns
STGW20V60F
STGW20V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 40A max collector current. It has a turn on time of 49ns and turn off time of 173ns, making it ideal for power control applications requiring fast switching speeds. The transistor comes in a rectangular package with through-hole terminals, suitable for flange mount installation.
© 2023 All rights reserved
