Loading...

SINGLE WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 492

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGWT20V60F by STMicroelectronics

STGWT20V60F

STMicroelectronics

STGWT20V60F by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 40A IC, and 49ns ton. It is used for power control applications due to its single configuration with built-in diode and flange mount package style.

COLLECTOR

40 A

600 V

SINGLE WITH BUILT-IN DIODE

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

173 ns

49 ns

STGW20H60DF by STMicroelectronics

STGW20H60DF

STMicroelectronics

STGW20H60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V and IC of 40A. Ideal for POWER CONTROL applications, it has a max VCE of 600V and turn-off time of 259ns. This SINGLE transistor in PLASTIC/EPOXY package operates b/w -55 to 175 °C.

40 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

167 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

259 ns

259 ns

55.9 ns

2 V

STGWT20H60DF by STMicroelectronics

STGWT20H60DF

STMicroelectronics

STGWT20H60DF by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 40A IC, and 167W power dissipation. Ideal for power control applications due to its fast turn-on/off times and high collector-emitter voltage. Package style: FLANGE MOUNT, terminal form: THROUGH-HOLE, and operating temperature range: -55 to 175 °C.

COLLECTOR

40 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

167 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

259 ns

259 ns

55.9 ns

2 V

FD1200R17KE3KB2NOSA1 by Infineon Technologies

FD1200R17KE3KB2NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1700 A; Case Connection: ISOLATED; Terminal Position: UPPER;

ISOLATED

1700 A

1700 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X7

1

7

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2100 ns

1050 ns

FD400R33KF2CKNOSA1 by Infineon Technologies

FD400R33KF2CKNOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 660 A; Nominal Turn On Time (ton): 480 ns; JESD-30 Code: R-XUFM-X7;

ISOLATED

660 A

3300 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X7

1

7

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1900 ns

480 ns

FD250R65KE3KNOSA1 by Infineon Technologies

FD250R65KE3KNOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector-Emitter Voltage: 6500 V; Terminal Position: UPPER; Terminal Form: UNSPECIFIED;

ISOLATED

6500 V

SINGLE WITH BUILT-IN DIODE

R-PUFM-X7

1

7

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

8100 ns

1200 ns

FZ400R33KL2CB5NOSA1 by Infineon Technologies

FZ400R33KL2CB5NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 750 A; Case Connection: ISOLATED; JESD-30 Code: R-XUFM-X5;

ISOLATED

750 A

3300 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X5

1

5

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

4250 ns

1400 ns

FD800R17KE3B2NOSA1 by Infineon Technologies

FD800R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1200 A; No. of Terminals: 7; Package Shape: RECTANGULAR;

ISOLATED

1200 A

1700 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X7

1

1

7

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

SILICON

1900 ns

900 ns

FD1200R17KE3KNOSA1 by Infineon Technologies

FD1200R17KE3KNOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1600 A; Terminal Position: UPPER; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

ISOLATED

1600 A

1700 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X7

1

7

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

2100 ns

1050 ns

FD300R12KS4B5HOSA1 by Infineon Technologies

FD300R12KS4B5HOSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1950 W; Maximum Collector Current (IC): 370 A; No. of Elements: 1;

ISOLATED

370 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

R-XUFM-X7

1

7

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

1950 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

590 ns

180 ns

3.75 V

FD400R12KE3B5HOSA1 by Infineon Technologies

FD400R12KE3B5HOSA1

Infineon Technologies

Infineon's FD400R12KE3B5HOSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 580A max collector current. Featuring a single configuration with built-in diode, it has a turn on time of 400ns and turn off time of 830ns. Ideal for high-power applications requiring fast switching capabilities in industrial machinery and power electronics.

ISOLATED

580 A

1200 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X5

1

5

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

830 ns

400 ns

FZ600R17KE3S4HOSA1 by Infineon Technologies

FZ600R17KE3S4HOSA1

Infineon Technologies

Infineon Technologies' FZ600R17KE3S4HOSA1 is an N-CHANNEL IGBT with 1700V VCE, 840A IC, and 3150W power dissipation. Ideal for power control applications, it features a built-in diode, UL approval, and operates b/w -40 to 125°C.

ISOLATED

840 A

1700 V

SINGLE WITH BUILT-IN DIODE

6.4 V

20 V

R-XUFM-X5

1

5

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

3150 W

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1200 ns

400 ns

2.45 V

STGP7NB60HD by STMicroelectronics

STGP7NB60HD

STMicroelectronics

STGP7NB60HD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 14A max collector current, and 80W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 220ns.

14 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

80 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

220 ns

63 ns

STGY80H65DFB by STMicroelectronics

STGY80H65DFB

STMicroelectronics

STMicroelectronics' STGY80H65DFB is an N-CHANNEL IGBT with 650V VCEsat, 120A IC, and 469W Pd. Ideal for POWER CONTROL applications due to its fast turn-off time of 358ns and high operating temperature range (-55 °C to 175°C).

COLLECTOR

120 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSIP-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

469 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

358 ns

128 ns

2 V

IXSK35N120AU1 by IXYS Corporation

IXSK35N120AU1

IXYS Corporation

IXYS Corporation's IXSK35N120AU1 is an N-CHANNEL IGBT with 1200V VCE, 70A IC, and 4V VCEsat. Ideal for MOTOR CONTROL applications, it has a built-in diode, 1100ns toff, and can handle up to 300W power dissipation.

HIGH SPEED

COLLECTOR

70 A

1200 V

SINGLE WITH BUILT-IN DIODE

8 V

20 V

TO-264

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

300 W

300 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

1100 ns

230 ns

4 V

IXSH24N60AU1 by IXYS Corporation

IXSH24N60AU1

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 48 A; No. of Terminals: 3;

FAST

COLLECTOR

48 A

600 V

SINGLE WITH BUILT-IN DIODE

500 ns

6.5 V

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

150 W

150 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

925 ns

300 ns

2.7 V

STGB7NB60HDT4 by STMicroelectronics

STGB7NB60HDT4

STMicroelectronics

STGB7NB60HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 14A max collector current, and 80W max power dissipation. Ideal for motor control applications due to its built-in diode, fast turn-off time of 220ns, and small outline package style.

COLLECTOR

14 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

80 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

MOTOR CONTROL

SILICON

220 ns

63 ns

IXGN50N60BD2 by IXYS Corporation

IXGN50N60BD2

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 75 A; Terminal Position: UPPER;

FAST

ISOLATED

75 A

600 V

SINGLE WITH BUILT-IN DIODE

20 V

R-PUFM-X4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

NICKEL

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

200 ns

50 ns

2.5 V

IXGH32N60AU1 by IXYS Corporation

IXGH32N60AU1

IXYS Corporation

IXGH32N60AU1 by IXYS Corp is an N-CHANNEL IGBT with VCEsat of 2.9V, IC of 60A, and toff of 400ns. Ideal for MOTOR CONTROL applications due to its high power dissipation of 200W and max voltage of 600V. Features single configuration with built-in diode in a RECTANGULAR package.

FAST

COLLECTOR

60 A

600 V

SINGLE WITH BUILT-IN DIODE

175 ns

5 V

20 V

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

200 W

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

400 ns

60 ns

2.9 V

IXGH30N60BD1 by IXYS Corporation

IXGH30N60BD1

IXYS Corporation

IXGH30N60BD1 by IXYS Corp is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 60A max collector current, and 200W max power dissipation. Ideal for power control applications due to its fast turn-off time of 200ns and built-in diode in a rectangular package.

FAST

COLLECTOR

60 A

600 V

SINGLE WITH BUILT-IN DIODE

190 ns

5 V

20 V

TO-247AD

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

200 ns

25 ns

IXGR32N60CD1 by IXYS Corporation

IXGR32N60CD1

IXYS Corporation

IXGR32N60CD1 by IXYS Corp is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 45A max collector current, and 140W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 210ns.

FAST

ISOLATED

45 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

R-PSIP-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

140 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

210 ns

50 ns

STGFW40V60DF by STMicroelectronics

STGFW40V60DF

STMicroelectronics

STGFW40V60DF from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.3V, supports up to 600V collector-emitter voltage, and operates at temperatures from -55 °C to 175°C. Ideal for high-performance switching in industrial systems.

ISOLATED

80 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

98.5 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

241 ns

73 ns

2.3 V

STGW28IH125DF by STMicroelectronics

STGW28IH125DF

STMicroelectronics

STGW28IH125DF from STMicroelectronics is a robust N-channel IGBT ideal for high-power applications. It features a max VCEsat of 2.5V, 375W power dissipation, and operates up to 175 °C. Perfect for industrial drives and renewable energy systems.

COLLECTOR

60 A

1250 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

322 ns

2.5 V

STGWT28IH125DF by STMicroelectronics

STGWT28IH125DF

STMicroelectronics

STGWT28IH125DF from STMicroelectronics is a robust N-channel IGBT designed for high-efficiency applications. It features a max VCEsat of 2.5V, supports up to 375W power dissipation, and operates in extreme temps (-55 °C to 175 °C). Ideal for industrial motor control and power conversion.

COLLECTOR

60 A

1250 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

375 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

322 ns

2.5 V

STGWT20IH125DF by STMicroelectronics

STGWT20IH125DF

STMicroelectronics

STGWT20IH125DF from STMicroelectronics is a high-performance N-channel IGBT ideal for power applications. It features a max VCEsat of 2.5V, 1250V collector-emitter voltage, and handles up to 40A current. Its robust design suits industrial motor drives and renewable energy systems.

COLLECTOR

40 A

1250 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

259 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

285 ns

2.5 V

CM1400E3U-24NF by Powerex

CM1400E3U-24NF

Powerex

Powerex CM1400E3U-24NF is an N-CHANNEL IGBT with 1200V VCE, 1400A IC, and 150°C max temp. Ideal for power control applications due to its single configuration with built-in diode in a flange mount package.

ISOLATED

1400 A

1200 V

SINGLE WITH BUILT-IN DIODE

R-XUFM-X4

1

4

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

IRG4BC20UD-STRL by International Rectifier

IRG4BC20UD-STRL

International Rectifier

IRG4BC20UD-STRL by International Rectifier is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a nominal turn-off time of 320ns, making it suitable for power control applications requiring fast switching speeds. This IGBT comes in a small outline package with gull wing terminals for surface mount assembly.

COLLECTOR

13 A

600 V

SINGLE WITH BUILT-IN DIODE

170 ns

6 V

20 V

R-PSSO-G2

e0

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

225

N-CHANNEL

60 W

Not Qualified

Insulated Gate BIP Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

SINGLE

30

POWER CONTROL

SILICON

320 ns

55 ns

IRG4BC20UD-STRR by International Rectifier

IRG4BC20UD-STRR

International Rectifier

IRG4BC20UD-STRR by International Rectifier is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 13A max collector current. It has a built-in diode, 170ns fall time, and 320ns turn off time. Ideal for power control applications requiring high power dissipation up to 60W in surface mount configurations.

COLLECTOR

13 A

600 V

SINGLE WITH BUILT-IN DIODE

170 ns

6 V

20 V

R-PSSO-G2

e0

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

225

N-CHANNEL

60 W

Not Qualified

Insulated Gate BIP Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

SINGLE

30

POWER CONTROL

SILICON

320 ns

55 ns

STGB3NB60SDT4 by STMicroelectronics

STGB3NB60SDT4

STMicroelectronics

STGB3NB60SDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 6A max collector current, and 70W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 4800ns.

6 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

70 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

MOTOR CONTROL

SILICON

4800 ns

275 ns

STGP10NB37LZ by STMicroelectronics

STGP10NB37LZ

STMicroelectronics

STGP10NB37LZ by STMicroelectronics is an N-CHANNEL IGBT with 375V max collector-emitter voltage, 20A max collector current, and 125W max power dissipation. Primarily used in automotive ignition systems due to its single configuration with built-in diode and nominal turn-off time of 17800ns.

VOLTAGE CLAMPING

20 A

375 V

SINGLE WITH BUILT-IN DIODE

2.4 V

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AUTOMOTIVE IGNITION

SILICON

17800 ns

860 ns

STGFW20V60DF by STMicroelectronics

STGFW20V60DF

STMicroelectronics

STGFW20V60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.2V, IC of 40A, and Pmax of 86.7W. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 173ns and high operating temperature range (-55 to 175 °C).

ISOLATED

40 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

86.7 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

173 ns

49 ns

2.2 V

STGFW30V60DF by STMicroelectronics

STGFW30V60DF

STMicroelectronics

STGFW30V60DF by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.3V, IC of 60A, and Pmax of 58W. Ideal for power control applications due to its fast turn-off time (toff) of 225ns and high collector-emitter voltage of 600V. Suitable for use in isolated case connections at temperatures ranging from -55 °C to 175°C.

ISOLATED

60 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

58 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

225 ns

59 ns

2.3 V

HGT1N40N60A4D by Fairchild Semiconductor

HGT1N40N60A4D

Fairchild Semiconductor

Fairchild Semiconductor's HGT1N40N60A4D is an N-CHANNEL IGBT with 110A IC, 600V VCE, and 298W Pd. Ideal for POWER CONTROL applications, it features a toff of 240ns, tf of 95ns, and ton of 47ns. The package style is FLANGE MOUNT with PLASTIC/EPOXY body material.

LOW CONDUCTION LOSS

ISOLATED

110 A

600 V

SINGLE WITH BUILT-IN DIODE

95 ns

7 V

20 V

R-PUFM-X4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

298 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

240 ns

47 ns

STGW40NC60W by STMicroelectronics

STGW40NC60W

STMicroelectronics

STGW40NC60W by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 70A max collector current, and 250W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 280ns.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

280 ns

46 ns

STGW45NC60WD by STMicroelectronics

STGW45NC60WD

STMicroelectronics

STGW45NC60WD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 90A max collector current, and 285W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 280ns.

90 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

285 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

280 ns

46 ns

STGF10NC60SD by STMicroelectronics

STGF10NC60SD

STMicroelectronics

STGF10NC60SD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, a turn-off time of 560ns, and can handle up to 10A current. Ideal for applications in industrial motor drives and power converters.

ULTRA FAST

ISOLATED

10 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

25 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

560 ns

22.5 ns

STGP10NC60S by STMicroelectronics

STGP10NC60S

STMicroelectronics

STGP10NC60S from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, a power dissipation of 62.5W, and operates at up to 150 °C. Its fast switching times enhance efficiency in various circuits.

21 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

62.5 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

560 ns

22.5 ns

IHW15N120R2 by Infineon Technologies

IHW15N120R2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 357 W; Maximum Collector Current (IC): 30 A; Maximum Gate-Emitter Voltage: 20 V;

COLLECTOR

30 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.4 V

20 V

TO-247AD

R-PSFM-T3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

357 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

432 ns

IHW20N120R2 by Infineon Technologies

IHW20N120R2

Infineon Technologies

IHW20N120R2 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 40A. With a nominal turn-off time of 526ns, it is ideal for applications requiring high power dissipation up to 330W in industrial settings. The package style is flange mount with through-hole terminals, making it suitable for various power electronics applications.

COLLECTOR

40 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.4 V

20 V

TO-247AD

R-PSFM-T3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

330 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

526 ns

IHW30N100R by Infineon Technologies

IHW30N100R

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 412 W; Maximum Collector Current (IC): 60 A; Case Connection: COLLECTOR;

COLLECTOR

60 A

1000 V

SINGLE WITH BUILT-IN DIODE

6.4 V

20 V

TO-247AC

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

412 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SILICON

988.4 ns

IHW30N120R2 by Infineon Technologies

IHW30N120R2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Maximum Collector Current (IC): 60 A; JEDEC-95 Code: TO-247AD;

COLLECTOR

60 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.4 V

20 V

TO-247AD

R-PSFM-T3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

390 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

900 ns

IHW30N90R by Infineon Technologies

IHW30N90R

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 454 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Voltage: 20 V;

COLLECTOR

60 A

900 V

SINGLE WITH BUILT-IN DIODE

6.4 V

20 V

TO-247AC

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

454 W

Not Qualified

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SILICON

640 ns

STGW35HF60WDI by STMicroelectronics

STGW35HF60WDI

STMicroelectronics

STGW35HF60WDI from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a turn-off time of just 295 ns, and can handle up to 200 W dissipation. Ideal for high-performance switching in industrial systems.

60 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

200 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

295 ns

45 ns

STGW45HF60WDI by STMicroelectronics

STGW45HF60WDI

STMicroelectronics

STGW45HF60WDI by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 70A max collector current, and 250W max power dissipation. Ideal for power control applications requiring a single transistor with built-in diode in a rectangular package style.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

STGWA35HF60WDI by STMicroelectronics

STGWA35HF60WDI

STMicroelectronics

STGWA35HF60WDI from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 70A current capacity, and a fast turn-off time of 295ns. Ideal for high-performance switching in industrial systems.

70 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

260 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

295 ns

45 ns

STGWA45HF60WDI by STMicroelectronics

STGWA45HF60WDI

STMicroelectronics

STGWA45HF60WDI from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max power dissipation of 310 W, operates up to 150 °C, and supports voltages up to 600 V. Ideal for applications requiring robust performance in demanding environments.

80 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

310 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

STGP19NC60WD by STMicroelectronics

STGP19NC60WD

STMicroelectronics

STGP19NC60WD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 40A collector current, and a fast turn-off time of 204ns. Ideal for high-performance switching in industrial systems.

40 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

204 ns

33 ns

STGW19NC60WD by STMicroelectronics

STGW19NC60WD

STMicroelectronics

STGW19NC60WD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 42A collector current, and a fast turn-off time of 204ns. Ideal for high-performance switching in industrial systems.

42 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

204 ns

33 ns