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IXGH32N60AU1

IXYS Corporation

IXGH32N60AU1 by IXYS Corporation

IXGH32N60AU1 by IXYS Corp is an N-CHANNEL IGBT with VCEsat of 2.9V, IC of 60A, and toff of 400ns. Ideal for MOTOR CONTROL applications due to its high power dissipation of 200W and max voltage of 600V. Features single configuration with built-in diode in a RECTANGULAR package.

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Atlantic Semiconductor

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Advanced Electronics

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$1.327

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AZTECH Wire

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Andel Nordic

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Perfect Parts

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Overview

Unlock the power of efficient motor control with the IXGH32N60AU1 by IXYS Corporation. Crafted with precision and quality in mind, this N-CHANNEL IGBT transistor offers unparalleled performance and reliability. Ideal for a wide range of applications, including motor control, this single transistor with a built-in diode provides value and benefits that are unmatched. Experience smooth operation and enhanced efficiency with the IXGH32N60AU1, setting new standards in the industry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties, making the IGBT more reliable and durable.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, ensuring efficient and reliable performance in controlling motors.

Maximum VCEsat: 2.9 V

Low VCEsat value results in lower power dissipation and higher efficiency in the IGBT.

Maximum Power Dissipation (Abs): 200 W

High power dissipation capacity enables the IGBT to handle heavy loads and operate at high power levels.

Maximum Collector-Emitter Voltage: 600 V

High collector-emitter voltage rating allows the IGBT to handle high voltage applications with ease.

Maximum Gate-Emitter Voltage: 20 V

This voltage rating ensures safe and reliable operation of the gate-emitter circuit in the IGBT.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXGH32N60AU1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Additional Features:

FAST

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

175 ns

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

200 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

400 ns

Nominal Turn On Time (ton):

60 ns

Maximum VCEsat:

2.9 V

Trade Compliance

IXGH32N60AU1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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