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IXGH30N60BD1

IXYS Corporation

IXGH30N60BD1 by IXYS Corporation

IXGH30N60BD1 by IXYS Corp is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 60A max collector current, and 200W max power dissipation. Ideal for power control applications due to its fast turn-off time of 200ns and built-in diode in a rectangular package.

Median Price

$37.410

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Master Electronics

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Ozdisan Elektronik

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Nova Conductors

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AZTECH Wire

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Andel Nordic

Denmark . 50 parts In-Stock

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$44.870

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A-Z Elektronik GmbH

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Overview

IXGH30N60BD1 by IXYS Corporation is the ultimate choice for those seeking reliable and high-quality Insulated Gate Bipolar Transistors (IGBT). With a focus on power control applications, this N-CHANNEL transistor offers exceptional performance and efficiency. Its single configuration with a built-in diode makes it a versatile solution for various projects. Designed with maximum power dissipation of 200W and a maximum collector-emitter voltage of 600V, this transistor ensures optimum functionality even in challenging conditions. Trust IXGH30N60BD1 to deliver seamless power control with unmatched reliability and precision.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material ensures good insulation and robust build quality, making the product durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-Channel design offers improved efficiency and lower power consumption, making the product energy-efficient.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode enhances the performance and reliability of the product, allowing for smoother power control.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance in power management systems.

Package Shape: RECTANGULAR

Rectangular shape makes it easier for mounting and integration into various electronic circuits and systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and easy soldering, facilitating secure connections.

Maximum Fall Time (tf): 190 ns

Fast fall time ensures quick switching speeds, reducing power losses and improving overall efficiency.

Maximum Power Dissipation (Abs): 200 W

High power dissipation capability allows for handling large amounts of power, making it suitable for high-power applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures stable performance in various environments and applications.

Maximum Collector-Emitter Voltage: 600 V

High collector-emitter voltage rating enables safe operation in high voltage circuits, enhancing reliability.

Maximum Collector Current (IC): 60 A

High collector current rating allows for handling large currents, making it ideal for power control applications.

Maximum Gate-Emitter Threshold Voltage: 5 V

Low gate-emitter threshold voltage ensures efficient gate control, enhancing the overall performance of the transistor.

Nominal Turn On Time (ton): 25 ns

Fast turn-on time results in quick response and high switching speeds, improving overall efficiency and performance.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXGH30N60BD1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Additional Features:

FAST

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

190 ns

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

200 ns

Nominal Turn On Time (ton):

25 ns

Trade Compliance

IXGH30N60BD1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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